Article

# InAs–InP (1.55- $\mu$ m Region) Quantum-Dot Microring Lasers

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Eindhoven Univ. of Technol., Eindhoven
(Impact Factor: 2.11). 04/2008; 20(6):446 - 448. DOI: 10.1109/LPT.2008.916963
Source: IEEE Xplore

ABSTRACT

In this letter, we demonstrate electrically pumped continuous-wave lasing at room temperature in microring lasers, which employ a quantum-dot gain medium. Lasing occurs in the important 1.55-mum telecom wavelength range. The 2-mum-wide ring waveguides are made from InGaAsP-InP (100) material suitable for active-passive photonic integrated circuits. Lasing in rings down to 22 mum in diameter is found, with a threshold current of 12.5 mA.

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Available from: P.J. van Veldhoven, May 16, 2013
• ##### Article: High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots
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ABSTRACT: Lasing at a wavelength of >1.3 μm has been achieved at temperatures of up to 380 K in a ring microlaser (diameter of 6 μm) with an active region based on InAs/InGaAs quantum dots.
No preview · Article · Aug 2012 · Semiconductors
• ##### Article: Lateral Ordering, Position, and Number Control of Self-Organized Quantum Dots: The Key to Future Functional Nanophotonic Devices
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ABSTRACT: Lateral ordering, position, and number control of self-organized epitaxial semiconductor quantum dots (QDs) are demonstrated. Straight linear InAs QD arrays are formed by self- organized anisotropic strain engineering of an InGaAsP/InP (10 0) superlattice template in chemical beam epitaxy. The QD emission wavelength at room temperature is tuned into the important 1.55 mum telecom wavelength region through the insertion of ultrathin GaAs interlayers. Guided self-organized anisotropic strain engineering is demonstrated on shallow- and deep-patterned GaAs (3 1 1)B substrates by molecular beam epitaxy for the formation of complex InGaAs QD arrays. Lateral positioning and number control of InAs QDs, down to a single QD, are demonstrated on truncated InP (100) pyramids by selective-area metal-organic vapor phase epitaxy. Sharp emission around 1.55 mum is observed well above liquid nitrogen temperatures. The regrowth of a passive waveguide structure establishes submicrometer-scale active- passive integration. The demonstrated control over QD formation is the key to future functional nanophotonic devices and paves the way toward the ultimates of photonic-integrated circuits operating at the single and multiple electron and photon level with control of the quantum mechanical and electromagnetic interactions.
No preview · Article · Aug 2008 · IEEE Journal of Selected Topics in Quantum Electronics
• ##### Article: Theoretical study of InGaAsP-InP active microring
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ABSTRACT: The electrically pumped InGaAsP/InP active microring has been theoretically analyzed and numerically simulated based on subsection model, with carrier rate equation and amplified spontaneous emission taken into account. After the subsection model is introduced in detail, the spectrum characteristics are numerically investigated. The simulation results show that spectrum characteristics will shift under different pump current and injected light power. The performances of an optical on/off switching utilizing pump-probe method based on InGaAsP/InP active microring are investigated. The results show that if we choose probe light off resonation initially, and pump light on resonation, only several hundred of microwatt power of pump light can realize the probe light on/off conversion. Such a potential will be applied in many other optical applications with ultra low power consumption. However, carrier lifetime will be the main factor restricting the characteristics of electrically pumped active microring due to the fact that the refractive index change is induced by carrier density change.
No preview · Article · Dec 2008 · Proceedings of SPIE - The International Society for Optical Engineering