A continuous-wave hybrid AlGaInAs-silicon evanescent laser. IEEE Photon Technol Lett

Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California, United States
IEEE Photonics Technology Letters (Impact Factor: 2.11). 06/2006; 18(10):1143 - 1145. DOI: 10.1109/LPT.2006.874690
Source: IEEE Xplore


We report a novel laser architecture, the hybrid silicon evanescent laser (SEL), that utilizes offset AlGaInAs quantum wells (QWs) bonded to a silicon waveguide. The silicon waveguide is fabricated on a silicon-on-insulator wafer using a complimentary metal-oxide-semiconductor-compatible process, and is subsequently bonded with the AlGaInAs QW structure using low temperature O2 plasma-assisted wafer bonding. The optical mode in the SEL is predominantly confined in the passive silicon waveguide and evanescently couples into the III-V active region providing optical gain. The SEL lases continuous wave (CW) at 1568 nm with a threshold of 23 mW. The maximum temperature for CW operation is 60degC. The maximum single-sided fiber-coupled CW output power at room temperature is 4.5 mW

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Available from: Alexander Fang, May 17, 2013
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