Diffraction-limited 1.3-μm-wavelength tapered-gain-region lasers with >1-W CW output power

ArticleinIEEE Photonics Technology Letters 8(11):1429 - 1431 · December 1996with4 Reads
Impact Factor: 2.11 · DOI: 10.1109/68.541539 · Source: IEEE Xplore

    Abstract

    Diode lasers have been fabricated in InGaAsP-InP multiple-quantum-well material grown by atmospheric-pressure organometallic vapor-phase epitaxy with an active optical cavity consisting of a ridge-waveguide region coupled to a tapered gain region. Over 1 W of CW output power was obtained with 85% of the power in the central lobe of a diffraction-limited far-field radiation pattern.