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Using 3D Monte Carlo simulation to develop resists for next-generation lithography
... This can reduce the time to develop a new resist. 24,25 The Excalibur simulation uses two models to describe the electron scattering behavior. The first utilizes the Joy model for electrons with kinetic energies above 500 eV. ...
... The molecular density, the effective atomic number, the average atomic weight, and the mean ionization potential play a fundamental role in simulating the interaction between the e-beam and the resist; moreover, the substrate type and the resist thickness have an important role for this model. 24 The aim of this study is to identify new negative tone resists that can be used for photomask production suitable for EUVL. In this paper, two different resists have been tested to ascertain their highest possible resolution, highest possible sensitivity, and the etch selectivity characteristics. ...
Metal-organic materials such as [NH2(CH2-CH=CH2)2][Cr7NiF8(Pivalate)16] can act as negative tone resists for electron beam lithography (EBL) with high-resolution patterning of sub-40 nanometer pitch while exhibiting ultrahigh dry etch selectivities >100:1 and giving line dose exposures >11,000 pC/cm. It is clear that the resist sensitivity is too low to be used to manufacture the latest nanoscale photomasks that are suitable for extreme ultraviolet lithography. Therefore, the focus of this work here is to improve the sensitivity of this resist while maintaining its resolution and dry etch selectivity. Using our latest Monte Carlo simulation called Excalibur, we predict that the sensitivity would increase by a factor of 1.4 when the nickel atom is substituted by a cadmium atom. EBL studies showed an excellent agreement with the simulation, and plasma etching studies demonstrated that this did not affect the dry etch performance of the resist which remains very good with a selectively of ca. 99:1 for the etching of silicon at these resolutions with a low sensitivity of 7995 pC/cm.
The synthesis and structure of new heterometallic wheels are reported, with preliminary studies of selected compounds.
A Monte Carlo simulation of production and emission of Auger electron signals in Auger electron spectroscopy (AES) has been performed to calculate the dependence of Auger electron intensity on film thickness for a film/substrate specimen. The electron spectrum is simulated, covering the energy range from the elastic peak down to Auger electron peak, by including bulk loss peak of electronic excitation. This simulation is based on the use of Mott’s cross section for electron elastic scattering and Penn’s dielectric function approach to electron inelastic scattering. Bulk plasmon excitation peaks contributed from both film and substrate are found in the low loss region near the elastic peak and the AES signal peak. The background subtraction was then performed for the simulated Auger electron spectrum, leading to obtain the approximate exponential decay behavior of Auger signal intensity varied with the film thickness. It is found that single value of effective attenuation length (EAL) is not enough for an accurate measurement of film thickness. We define two attenuation parameters to characterize the decay functional shape used as the calibration curve for accurate film thickness determination if the universal expression on experimental condition will be found.
A new resist material for electron beam lithography has been created that is based on a supramolecular assembly. Initial studies revealed that with this supramolecular approach, high-resolution structures can be written that show unprecedented selectivity when exposed to etching conditions involving plasmas.
This eagerly-awaited volume has been edited by two academic researchers with extensive and reputable experience in this field. Emphasis is given to the underlying science of the method of Auger microscopy, and its instrumental realization, the visualization and interpretation of the data in the sets of the images that form the output of the measurements and the methods used to quantify the images. Imaging artefacts in Auger microscopy and methods to correct them are also detailed. The authors describe the technique of Multi-Spectral Auger Microscopy (MULSAM) and demonstrate its advantages in mapping complex multi-component surfaces. The book concludes with an outlook for the future of Auger microscopy.
The working out of an empirical expression for the cross section for production of atomic K-shell vacancies by electrons is described. The basis is a critical analysis of the existing experimental data. The ranges for which the function is evaluated are 6<or=Z<or=79 and 1<or=U<or=20 (U being the ratio between the incident electron energy and the binding energy of electrons in the K shell). The possible meanings of the various factors present in the expression are examined by comparison with the asymptotic Bethe expression. The results obtained by the empirical function can also be applied to both Z and U intervals even wider than those first considered.
The future of integrated electronics is the future of electronics itself. Integrated circuits will lead to such wonders as home computers, automatic controls for automobiles, and personal portable communications equipment. But the biggest potential lies in the production of large systems. In telephone communications, integrated circuits in digital filters will separate channels on multiplex equipment. Integrated circuits will also switch telephone circuits and perform data processing. In addition, the improved reliability made possible by integrated circuits will allow the construction of larger processing units. Machines similar to those in existence today will be built at lower costs and with faster turnaround.
Monte Carlo Modeling for Electron Microscopy and Microanalysis
- Joy