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Effect of Diode Power Losses on the Operation of Boost Converter System
... ). Block diagram of the MFC energy harvesting and boosting system.The proposed DC-DC converter(Fig.2)is constructed from the following circuit power elements: semiconductors switch (S), a diode[49], and an inductor (L) as well input /output capacitors (Cin, Co), beside the load resistor (RL). It could be operating in different modes[50,51]; namely, continuous conduction mode (CCM) and discontinues conduction mode (DCM), as well the critical conduction mode (CrCM). ...
The reverse recovery lifetime of a diode is one the key parameter in power electronics market. To make a diode with fast switching speed, diodes are often doped with impurities such as gold and platinum to improve its lifetime. In this works, we present the reverse recovery lifetime improvement of a power rectifier diode through platinum diffusion in the intrinsic region in between P-N junction using Design of Experiment (DOE) approach. A commercial available power rectifier is used in this study. We factored in the temperature and thermal diffusion time during the platinum diffusion process in our DOE. From results, DOE 2 (with shorter thermal duration and high temperature for diffusion) is selected based on meeting requirement for forward voltage and reverse recovery specifications i.e. forward voltage at 1.8V and reverse recovery time at 27ns.
Discrete transition simulators usually do not apply full physical models of devices and as a result, they are incapable of showing parasitic processes such as diode reverse recovery. The main objective of this study was to develop a behavioral model of diode reverse recovery that can be implemented in these simulators. The proposed model is based on the lumped charge control concept. It can be easily extracted from a simple measurement and it does not require heavy computational resources. The model was tested within the PSIM platform and was verified experimentally for various turn-off conditions. Model application is exemplified by investigating a lossless snubber of a three-phase buck-type rectifier.
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.
Preface. 1. Introduction. I: Converters in Equilibrium. 2. Principles of Steady State Converter Analysis. 3. Steady-State Equivalent Circuit Modeling, Losses, and Efficiency. 4. Switch Realization. 5. The Discontinuous Conduction Mode. 6. Converter Circuits. II: Converter Dynamics and Control. 7. AC Equivalent Circuit Modeling. 8. Converter Transfer Functions. 9. Controller Design. 10. Input Filter Design. 11. AC and DC Equivalent Circuit Modeling of the Discontinuous Conduction Mode. 12. Current Programmed Control. III: Magnetics. 13. Basic Magnetics Theory. 14. Inductor Design. 15. Transformer Design. IV: Modern Rectifiers and Power System Harmonics. 16. Power and Harmonics in Nonsinusoidal Systems. 17. Line-Commutated Rectifiers. 18. Pulse-Width Modulated Rectifiers. V: Resonant Converters. 19. Resonant Conversion. 20. Soft Switching. Appendices: A. RMS Values of Commonly-Observed Converter Waveforms. B. Simulation of Converters. C. Middlebrook's Extra Element Theorem. D. Magnetics Design Tables. Index.
Basic Calculation of a Boost Converter's Power Stage
- B Hauke
B. Hauke," Basic Calculation of a Boost Converter's Power Stage", Application Note,
SLVA372C, Texas Instrument, 2009-2014.
Electronic Devices and Integrated Circuits
- B P Singh
B.P. Singh, "Electronic Devices and Integrated Circuits", 1st Ed., Ch.3, Dorling Kindersley, Pvt.
Ltd., India, pp. 107-135, 2006.
Minimizing Ringing at the Switch Node of a Boost Converter
- J Falin
J. Falin, "Minimizing Ringing at the Switch Node of a Boost Converter," Application Report,
Texas Instrument, SLVA255, 2006
- M H Rashid
M. H. Rashid, "Power Electronics: Devices, Circuits, and Applications", 4th Ed., Ch.2, Courier
Westford, USA, pp. 65-87, 2014.
Understanding Diode Reverse Recovery and its Effect on Switching Losses
- P Haaf
- J Harper
P. Haaf, and J. Harper, "Understanding Diode Reverse Recovery and its Effect on Switching
Losses", Fairchild Semiconductor, pp. A23-A33, 2007.
www.fairchildsemi.com.