We study the defect tetrahedral semiconductor Ga2Se3 with ordered vacant sites using state-of-the-art density-functional calculations. The calculated main structural properties (the average cubic lattice parameter, a0=10.20 a.u., and the average Ga–Se bond length, r=4.52 a.u.) and electronic properties (the forbidden energy gap, direct, which amounts to about 2.4 eV) are in good agreement with
... [Show full abstract] the experimental data. The role of the coordination defects is analyzed in detail, and the contribution of the different atoms to the electronic density of states is also discussed. No significant differences are found if the vacant sites are ordered according to a monoclinic structure rather than orthorhombic, both previously proposed in literature, since the peculiar features of the structural and electronic properties are strongly related to the vacancies and their local environment rather than to their particular ordering. We also discuss the results obtained for the orthorhombic phase pseudomorphically grown on GaAs or ZnSe(001) substrates. © 1998 American Institute of Physics.