Characteristics of Ni/Gd FUSI for NMOS gate electrode applications
This letter investigates the work function tuning of nickel/gadolinium (Ni/Gd) fully silicided (FUSI) gate electrodes on HfSiO<sub>x</sub> dielectrics. It was found that as the percentage of Gd in the Ni/Gd increased from 10% to 30%, the effective work function value after a one-step 450-degC FUSI anneal decreased from 4.75 to 4.35 eV. In addition, the presence of Gd also resulted in lowering of equivalent oxide thickness (EOT) values. The mechanism for a decreased EOT is attributed to the reduction of low-kappa interfacial layers by the presence of Gd in the gate stack. The decrease in work function is attributed to the creation of oxygen vacancies within the high-kappa layer created by the presence of Gd layer.
Data provided are for informational purposes only. Although carefully collected, accuracy cannot be guaranteed. The impact factor represents a rough estimation of the journal's impact factor and does not reflect the actual current impact factor. Publisher conditions are provided by RoMEO. Differing provisions from the publisher's actual policy or licence agreement may be applicable.