Principles of transient charge pumping on partially depleted SOI MOSFETs

ArticleinIEEE Electron Device Letters 23(5):279 - 281 · June 2002with11 Reads
Impact Factor: 2.75 · DOI: 10.1109/55.998876 · Source: IEEE Xplore

    Abstract

    A new method to determine the interface trap density in partially depleted silicon-on-insulator (SOI) floating body MOSFETs is proposed for the first time. It can be considered as a "transient" charge-pumping (CP) technique in contrast to the normally used "steady-state" method. In our technique, majority carriers are removed from the floating body by applying a burst of pulses to the transistor gate. The change in the linear drain current after each pulse is used to determine the device interface trap density. The unique advantage of this method is the possibility to use it to characterize SOI MOSFETs without a body contact. The technique proposed is simple, reliable, and can be used for the characterization of deep submicron devices.