RF reactive magnetron sputtering was used to deposit transparent conductive ZnO : Al thin films on Corning 7059 glass and Si wafers. The dependence of film properties including microstructure, optical and electronic on coating parameters (target composition, RF power, substrate temperature, pressure, O2 partial pressure ratio, annealing temperature and annealing time) was investigated. The effect ... [Show full abstract] of process parameters was determined by means of fractional factorial design of the experiment. Smooth and crystalline ZnO : Al films were obtained in (0 0 0 2) the preferred orientation. Highly transparent (>80%) and low resistivity ZnO : Al films were deposited with optical band gap between 3.3 and 3.6 eV. By raising RF power and annealing temperature, and increasing the annealing time, the resistivity could be decreased to a low value of 6.24×10−4 Ω cm.