ArticlePDF Available

Defect Engineering: A Path toward Exceeding Perfection

Authors:

Abstract and Figures

Moving to nanoscale is a path to get perfect materials with superior properties. Yet defects, such as stacking faults (SFs), are still forming during the synthesis of nanomaterials and, according to common notion, degrade the properties. Here, we demonstrate the possibility of engineering defects to, surprisingly, achieve mechanical properties beyond those of the corresponding perfect structures. We show that introducing SFs with high density increases the Young’s Modulus and the critical stress under compressive loading of the nanowires above those of a perfect structure. The physics can be explained by the increase in intrinsic strain due to the presence of SFs and overlapping of the corresponding strain fields. We have used the molecular dynamics technique and considered ZnO as our model material due to its technological importance for a wide range of electromechanical applications. The results are consistent with recent experiments and propose a novel approach for the fabrication of stronger materials.
Content may be subject to copyright.
Defect Engineering: A Path toward Exceeding Perfection
Hamed Attariani,*
,,
Kasra Momeni,
§
and Kyle Adkins
Department of Mechanical and Materials Engineering, Wright State University, Dayton, Ohio 45435, United States
Engineering Program, Wright State University - Lake Campus, Celina, Ohio 45822, United States
§
Department of Mechanical Engineering, Louisiana Tech University, Ruston, Louisiana 71272, United States
*
SSupporting Information
ABSTRACT: Moving to nanoscale is a path to get perfect
materials with superior properties. Yet defects, such as stacking
faults (SFs), are still forming during the synthesis of
nanomaterials and, according to common notion, degrade
the properties. Here, we demonstrate the possibility of
engineering defects to, surprisingly, achieve mechanical
properties beyond those of the corresponding perfect
structures. We show that introducing SFs with high density
increases the Youngs Modulus and the critical stress under
compressive loading of the nanowires above those of a perfect
structure. The physics can be explained by the increase in
intrinsic strain due to the presence of SFs and overlapping of
the corresponding strain elds. We have used the molecular
dynamics technique and considered ZnO as our model material due to its technological importance for a wide range of
electromechanical applications. The results are consistent with recent experiments and propose a novel approach for the
fabrication of stronger materials.
1. INTRODUCTION
Nanomaterials have a number of high-energy partially
coordinated surface atoms that are comparable to the volume
of their low-energy fully coordinated atoms. This forms the
root of their size-dependent properties, such as enhancement of
mechanical and piezoelectric properties by reducing the size.
14
This size dependence provides an additional controlling
parameter for tailoring the characteristics of nanostructures.
Defect engineering on the nanoscale is another fascinating
possibility for building materials with various properties.
Defects such as stacking fault (SF), twinning, vacancies, and
interstitials are generally formed during the nanostructure
fabrication process, which can modify the mechanical,
57
electrical,
8
and optical properties.
9,10
Among dierent types of
nanostructures, one-dimensional nanostructures, for example,
nanowires (NWs), nanotubes (NTs), and nanobelts (NBs),
have been attracting signicant attention from the research
community due to their wide range of applications, such as
composite reinforcement,
11,12
energy harvesting,
13,14
sen-
sors,
15,16
light-emitting diodes,
17,18
and hybrid energy storage
systems.
19,20
Therefore, tailoring and improving their proper-
ties, specically, the mechanical properties, is key for their
eective utilization.
The common understanding is that (points and planar)
defects weaken the mechanical properties of nanostruc-
tures.
7,2126
However, recent experiments on GaAs NWs
depicted that introducing a high density of SFs increases the
compressive critical stress and Youngs Modulus.
5,6
In this case,
interestingly, the Youngs Modulus of defected NWs is even
greater than that of the perfect wurtzite (WZ) structure. It is
worth mentioning that despite the experimental evidence
previous molecular dynamics simulations could not capture this
phenomenon.
5
Here, we explore the material design space using the two
aforementioned additional design parameters, that is, defect
concentration and size, and demonstrate tailoring the material
properties by engineering their coupled eect. We have
considered the ZnO NWs as the model material and have
shown that planar defects can strengthen NWs beyond that of
the ones with perfect structure. Our results indicate that the
Youngs Modulus of NWs, surprisingly, increases as the density
of the SFs increases in the NWs. Also, although the critical
stress increases by introducing more SFs for the compressive
loading, it has an inverse eect on the critical stress for tensile
loading. This unique behavior is explained by the localized
longitudinal (caxis) stress and strain at defect sites. The
interplay between SFs and free surfaces is the other cause of
this eect. At the bulk, SFs are typically embedded between
partial dislocations,
27
whereas at the nanoscale, they are
conned between free surfaces. In the latter case, the SF
creates a step at the surface, changing the local crystal structure,
Received: December 13, 2016
Accepted: February 10, 2017
Published: February 23, 2017
Article
http://pubs.acs.org/journal/acsodf
© 2017 American Chemical Society 663 DOI: 10.1021/acsomega.6b00500
ACS Omega 2017, 2, 663669
This is an open access article published under an ACS AuthorChoice License, which permits
copying and redistribution of the article or any adaptations for non-commercial purposes.
which may alter the overall electromechanical properties of the
NWs.
2. NUMERICAL MODEL: DEVELOPMENT AND
VALIDATION
SFs, one of the most common types of planar defects in IIVI
and IIIVI semiconductor nanostructures,
2830
are categorized
into two types: (i) basal-plane and (ii) prismatic-plane SFs.
Here, we have developed a numerical model for the mechanics
of I1-SF in WZ ZnO, which has the lowest formation energy, 15
meV/unit-cell area,
31
among the dierent basal-plane SFs (I1,
I2, E) of WZ. The I1-SF Burger vector (
⎯→⎯⎯⎯
b
I1
) in ZnO is (1/3)
[011̅0] + (1/2) [0001],
28
which is generated by removing a
layer of c-plane atoms and moving the rest by
⎯→⎯⎯⎯
b
I1
. The perfect
WZ structure has a stacking sequence of ...AaBbAaBbAaB-
bAaBbAa..., where the uppercase and lowercase letters refer to
Zn and O atoms in two consecutive layers, respectively,
whereas I1-SF changes the stacking sequence to ...AaB-
bAaBbCcBbCcBbCc... (Figure 1a,b). Periodic boundary con-
ditions are applied along the caxis, to mimic a long NW, and
lateral directions are considered to be free. A Buckingham-type
interatomic potential is utilized with Binkstted parameters for
ZnO
32
(Table S1 in Supporting Information), which correctly
captures its mechanical and surface properties and has been
successfully used to study ZnO nanostructures. Also, the
developed atomistic model is veried as it reproduces the
reported experimental and numerical electromechanical proper-
ties of perfect ZnO NWs.
3,4,3337
Numerical simulations of the defected structure are
performed by initially relaxing the NW for 100 ps at the
simulation temperature, T= 0.01 K, under microcanonical
ensemble (NVE). Then, the isothermalisobaric ensemble
(NPT) with a Nosé
Hoover thermostat is applied for another
100 ps to nd the nal relaxed conguration. In the last stage, a
constant strain rate of ±0.001 fs1is applied along the caxis to
model the mechanical response of the NW under tension/
compression. Similar simulations are performed for a strain rate
of ±0.0001 fs1to ensure that the results are independent of
strain rate. The Youngs Modulus is estimated by tting a linear
expression on the early section of the stressstrain curve, ϵ<
0.01; this stands for the initial stage of loading. The numerical
model is implemented in the large-scale atomic/molecular
massively parallel simulator (LAMMPS) code,
38
and a time
step of 1 fs is chosen for all simulation steps.
One of the classical problems in atomistic simulations of
defects is the long-range interaction between the defects in a
simulation cell and their corresponding periodic images. To
overcome this issue and model a single SF, NWs of dierent
Figure 1. (a) Perfect WZ stacking sequence along the [0001] direction, where the uppercase and lowercase letters refer to O and Zn atoms in the
same layer, respectively. (b) The stacking sequence for I1-SF, where the arrows show the SF locations. (c) Longitudinal stress distribution along the c
axis for a perfect NW (dotted line) and a NW with a single defect (solid line). (d) Structure of a WZ NW with 13 SFs within 40 nm length.
ACS Omega Article
DOI: 10.1021/acsomega.6b00500
ACS Omega 2017, 2, 663669
664
lengths are modeled and each relaxed longitudinal stress eld
was compared to that of the similar perfect NW. Our
simulations indicate that the long-range interactions between
a SF and its image in a periodic cell are negligible for NWs of
length 40 nm and longer (Figure 1c). Here, to avoid
ambiguities in calculating the stress using atomistic simulations
due to unclear denition of the structure volume at such scales,
we have used a representative stress, σ*(= σzV/atom), to
illustrate the eect of SF on stress distribution within the
structure. High peaks appear at the defect, which rapidly decay
toward the periodic boundaries (Figure 1c); that is, at the
periodic boundaries, the stresses of the perfect and defective
NWs is almost the same. Thus, a length of 40 nm is chosen for
all simulated NWs here, whereas their diameters vary from 3 to
10 nm to study the eect of size. Furthermore, the eect of
defect density on mechanical behavior is investigated by
introducing numerous SFs, up to 13, in 40 nm length of a
perfect NW. Therefore, the distance between two adjacent SFs
varies from 20 to 3 nm for dierent defect densities. Figure 1d
shows the schematic of a defected NW with 13 SFs in 40 nm
length of the NW, which results in a distance of 3 nm between
two adjacent SFs.
3. RESULTS AND DISCUSSION
By applying periodic boundary conditions in all directions, we
have calculated the Youngs Modulus of bulk ZnO to be 146
GPa, which is in close agreement with the reported
experimental value, 140 GPa,
3941
and veries the developed
model. Also, the formation energy of I1-SF is calculated using
the Binks potential to ensure its capability for predicting the
properties of the faulted structure. The calculated I1-SF energy
is 14.1 meV/unit-cell area, which is in good agreement with
density functional theory calculations, 15 meV/unit-cell area
31
(see Supporting Information for detailed calculations). The
interaction between the defects and size scale on the structural
properties of NWs is studied by introducing a single I1-SF in
the middle of 40 nm long ZnO NWs of various diameters and
measuring their tension/compression response.
3.1. Mechanical Response and Size Dependence. The
stress gradually increases to reach a maximum, called critical
stress, where phase transformation occurs to release the
accumulated elastic energy that results in the stress drop (see
Figure S2). At the critical stress, the original WZ structure
transforms into a graphite-like (HX) phase under compression
and a body-centered tetragonal phase under tension.
4,34,36
However, in the presence of a SF, the NW breaks at the SF
under tensile loading without any phase transition because the
defect acts as an active site for crack initiation and the NW
cannot store enough elastic energy to initiate the phase
transition (Figure S2). In contrast, under compression, we still
observed the WZ HX phase transition.
Variations of the Youngs Modulus and critical stress versus
diameter for perfect and defective (with a single I1-SF) NWs
are plotted in Figure 2a. Although the variation of Youngs
Modulus in the presence of a single SF is negligible (Figure 2a),
the critical stress generally reduces by introducing a SF (Figure
2b), and this eect is more pronounced for NWs with a
diameter smaller than 4 nm. The dierence in the strength
(critical stresses) of defective and perfect NWs decreases by
increasing their diameters.
The overall size dependence of Youngs Modulus at a
nanoscale was frequently reported, using both experimental
2,35
and theoretical approaches,
4,33,42,43
and was associated with the
surface stress contribution. One well-known explanation is
based on the coreshell model,
44
where a shell (outer layers) is
under compressive stress due to surface stresses and the core
(inner layers) is under tension. The compressive stress at the
shell causes surface stiening and increases the overall Youngs
Modulus of the NWs with smaller diameters. The gap between
critical stresses of defective and perfect NWs can be explained
by the intrinsic strain distribution along the longitudinal
direction, [0001], of the relaxed structure. The longitudinal
strain, ϵz, is calculated using OVITO
4547
and is shown in
Figure 3. The SF induces intrinsic tensile strain at defect sites
and compressive strain at the defect surrounding, which causes
reduction in the critical stress. The size dependence of the
dierence between the critical stresses of defective and perfect
NWs can be justied by the interplay between the surface and
SF energies. Generally, reducing the system size leads to an
increase in the total energy density because of the increase in
the surface energy. Therefore, introducing SFs into a NW of
smaller diameter requires more energy per atom in comparison
to that for a larger-diameter NW, which is the source for the
size dependence of the critical stress dierence between perfect
and defective NWs. This has also been veried experimentally
Figure 2. Eect of I1-SF on the size-dependent mechanical response of
ZnO NWs. (a) Youngs Modulus of perfect and defective (single SF)
NWs under compression/tension vs diameter, which show negligible
eect of SF. (b) Variation of critical stress σcas a function of diameter
under compression/tension, which indicates larger reduction of σcfor
thinner NWs as SF is introduced into their structure. The superscripts
Ten and Comp stand for tensile and compression test, respectively.
ACS Omega Article
DOI: 10.1021/acsomega.6b00500
ACS Omega 2017, 2, 663669
665
for IIIV NWs,
48
for which the SF density depletes with
decreasing diameter and a perfect WZ NW can be produced by
reducing its diameter.
3.2. Defect Density. The possibility of tailoring the
mechanical properties of nanostructures through defect
engineering was investigated by introducing multiple SFs with
a constant separation distance into a ZnO NW of 10 nm
diameter. The spacing between SFs ranges from 3 to 20 nm for
dierent defect densities, that is, number of SFs in unit length
(ρSF). Variations of the Youngs Modulus and critical stress as a
function of the number of defects within 40 nm length (i.e.,
defect density, ρSF) are plotted in Figure 4 for both tensile and
compressive loadings. Our results show that increasing the ρSF
gradually increases the Youngs Modulus in tension and
compression. However, no drastic changes in the critical stress
were captured in tension and only a slight increase was
observed for compressive loading. Our simulations show that
introducing a high density of SFs, SF = 13, into a perfect
structure leads to a 6.23% increase in critical stress (the critical
stresses are summarized in Table S2). Surprisingly, the Youngs
Modulus of a highly defective NW (13 SFs in a 40 nm long
NW) is even higher than that of the perfect NWs, a result that
is nontrivial. This nding opens up a novel approach for
synthesizing nanostructures with a higher Youngs Modulus
through defect engineering. The stressstrain curves are
depicted in Figure S3 for more reference. It is worth
mentioning that this behavior was observed experimentally
for GaAs NWs under buckling; however, they could not capture
this physics using atomistic simulations.
5,6
The eect of strain
rate on the mechanical properties of NWs is a well-known
phenomenon.
49
Therefore, all simulations were repeated by
lowering the strain rate by 1 order of magnitude, 0.0001 fs1,to
investigate the impact of this parameter on the ascending trend
of Youngs Modulus. Our results (Figure 4) show that despite
the lower strain rate Youngs Modulus still increases by
increasing the number of SFs.
The underlying physics is multifaceted, which may lie in
changes of the bond nature around defects, as proposed in refs
5and 6. The eect of SF on the atomistic structure of WZ NW
is shown in Figure 5, which reveals the formation of a step at
the defect site after relaxation. At the intersection of SF and free
surface, surface stresses cause a severe local deformation. At the
intersection of SF and the [011̅0] surface, the bond length of
ZnO, located at the inner layer, represented by b1, decreases
from 1.978 Å in a perfect crystal to 1.884 Å in the deformed
structure. The out-of-plane ZnO bond length, denoted b2,is
Figure 3. Longitudinal strain, ϵz, for NWs with dierent defect densities and a diameter of 10 nm. Results for (a) 1 SF, (b) 3 SFs, (c) 6 SFs, and (d)
13 SFs are presented, which indicate complexity and interference of strain eld as the number of SFs increases.
Figure 4. Eect of SF density on the mechanical response of NWs. (a) Variation of tensile/compressive Youngs Modulus vs density of SFs,
indicating that a higher Youngs Modulus can be obtained by introducing higher defect densities in the NW. (b) Eect of SF density on the critical
stress, revealing degradation of this material property for the tensile loading, whereas it shows slight improvement under compressive loading and
small defect densities. All simulated NWs have the same diameter of 10 nm. The properties of a perfect NW are shown with dotted lines.
ACS Omega Article
DOI: 10.1021/acsomega.6b00500
ACS Omega 2017, 2, 663669
666
2.141 Å, whereas the out-of-plane bond length in the perfect
structure is 2.005 Å. Also, the in-plane bond angle, θ1,is
123.112°in the highly deformed zone, whereas this value
decreases to 120.303°for a perfect WZ. Finally, the out-of-
plane angle, θ2, is 91.871°for the defective (single I1-SF) and
111.458°for a perfect structure. These variations in the bond
length/angle can be used to verify the change in mechanical
properties of the nanostructure, that is, Ed4, where dand E
are the bond length and Youngs Modulus, respectively.
50
Introducing more SFs results in a larger change in the bond
length and angle, which consequently alters the mechanical
response of the system. Another explanation for this
phenomenon can be given by considering the strain
distribution in the relaxed structure. The intrinsic longitudinal
strain in the presence of multiple SFs is depicted in Figure 3b
d for dierent defect densities and indicates that the tensile
strain is induced at SF sites, whereas compressive strain appears
at the upper and lower regions of the SFs. As the density of SFs
increases, the tensile strain slightly decreases from 0.0116 to
0.0101, whereas the compressive strain increases from 0.0078
to 0.011. This change in the longitudinal strain is due to the
overlap between the strain elds of adjacent SFs. Referring to
the coreshell model, increasing the compressive strain at the
shell leads to a reduction in bond length and a higher Youngs
Modulus for the NWs.
To explore the eect of SF density on the critical stress, the
similar reasoning can be used. The sharp stress drop in the
stressstrain curve of ZnO NWs (Figures S2 and S3) can be
explained by the phase transition in ZnO NWs. During loading,
the NW stores energy in the form of elastic energy until a
critical value is reached. At this point, the stored energy will be
released by the phase transition mechanism. In compression, a
new HX phase nucleates from the surface and at some distance
from the SF (see Figure S2). This can be described by the
formation of highly localized deformed regions around SFs,
which change the bond type and crystal structure (Figure 5).
These domains are not the ideal sites for nucleation; hence, the
nucleation site will be shifted away from the SF locations.
Increasing the number of SFs increases the number of these
deformed zones and consequently limits the possibility of HX
phase nucleation. This leads to an increase in the energy
required for activating the phase transition mechanism and
subsequently an increase in the compressive critical stress.
4. CONCLUSIONS
In summary, we have investigated the possibility of applying
defect engineering to tailor the mechanical response of
nanostructures, using an atomistic modeling approach with
ZnO NWs as our model material. The simulations revealed that
introducing a higher density of I1-SFs will increase the Youngs
Modulus beyond that of the corresponding perfect structure
under both tensile and compressive loadings. Also, a highly
defective NW exhibits a higher strength under compression
test, whereas SFs reduce the tensile strength. The reason
behind this higher Youngs Modulus can be the change in the
bond length and overlapping of the SF strain elds. To study
the changes in the bond types and lengths, a detailed study
using ab initio techniques is required. Additionally, the
interaction between the surface energy and the SF intrinsic
stress predicts that adding the SFs in smaller NWs can have a
drastic impact on the mechanical properties of a material. The
results presented here suggest new routes for fabrication of
NWs with superior mechanical properties.
Considering the fact that intrinsic strain can mediate the
properties of nanostructures, additional detailed studies are
required to explore the eect of SFs on the electrical, optical,
and electromechanical response of NWs.
51,52
Also, there is a
feasibility to increase the NW activity by introducing SFs as
active sites for chemical reactions; thus, chemical activity of a
material can be tailored by introducing a proper distribution of
SFs. Furthermore, studying the eects of other types of SFs, I2
and E, point defects, and twin boundary on material response
would be another promising avenue for exploration.
53,54
Finally,
the possibility of strengthening a nanostructure via synthesizing
the WZ/zinc blende (ZB) polytype structures can be examined,
that is, the SFs are observed at the WZ/ZB interface.
ASSOCIATED CONTENT
*
SSupporting Information
The Supporting Information is available free of charge on the
ACS Publications website at DOI: 10.1021/acsomega.6b00500.
Strainstress curves for NWs and their corresponding
phase transition in the presence of SFs and also the
Buckingham potential parameters and calculation of SF
formation energy (PDF)
AUTHOR INFORMATION
Corresponding Author
*E-mail: hamed.attariani@wright.edu.
ORCID
Hamed Attariani: 0000-0002-4777-5116
Author Contributions
H.A. and K.M. performed the analysis and prepared the
manuscript. K.A. performed the molecular dynamic simulations.
Notes
The authors declare no competing nancial interest.
ACKNOWLEDGMENTS
The support of Wright State University and Louisiana Tech
University are gratefully acknowledged. This project is also
partly supported by Louisiana EPSCoR-OIA-1541079
Figure 5. Eect of SF on the atomic structure of a ZnO NW. (a)
Perfect WZ crystal structure in the absence of SF on the [011̅0]
surface. (b) The crystal structure at the intersection of SF and the
[011̅0] surface.
ACS Omega Article
DOI: 10.1021/acsomega.6b00500
ACS Omega 2017, 2, 663669
667
(NSF(2017)-CIMMSeed-10). The authors would like to thank
Ohio Super Computing (OSC), Grant No. ECS- PWSU0463,
and Louisiana Optical Network Initiative (LONI) for providing
the computational resources. Also, we thank Drs. A. Soghrati
and B. Shiari for supporting this research in part through
computational resources by National Nanotechnology Infra-
structure Network Computation (NNIN/C) project at
University of Michigan, which is supported by the National
Science Foundation under Grant No. ECS-0335765.
REFERENCES
(1) Fan, H. J.; Lee, W.; Hauschild, R.; Alexe, M.; Le Rhun, G.; Scholz,
R.; Dadgar, A.; Nielsch, K.; Kalt, H.; Krost, A.; et al. Template-Assisted
Large-Scale Ordered Arrays of ZnO Pillars for Optical and
Piezoelectric Applications. Small 2006,2, 561568.
(2) Asthana, A.; Momeni, K.; Prasad, A.; Yap, Y.; Yassar, R. In situ
observation of size-scale effects on the mechanical properties of ZnO
nanowires. Nanotechnology 2011,22, No. 265712.
(3) Agrawal, R.; Espinosa, H. D. Giant piezoelectric size effects in
zinc oxide and gallium nitride nanowires. A first principles
investigation. Nano Lett. 2011,11, 786790.
(4) Momeni, K.; Attariani, H. Electromechanical properties of 1D
ZnO nanostructures: nanopiezotronics building blocks, surface and
size-scale effects. Phys. Chem. Chem. Phys. 2014,16, 45224527.
(5) Chen, B.; Wang, J.; Gao, Q.; Chen, Y.; Liao, X.; Lu, C.; Tan, H.
H.; Mai, Y.-W.; Zou, J.; Ringer, S. P.; et al. Strengthening brittle
semiconductor nanowires through stacking faults: insights from in situ
mechanical testing. Nano Lett. 2013,13, 43694373.
(6) Chen, Y.; Burgess, T.; An, X.; Mai, Y.-W.; Tan, H. H.; Zou, J.;
Ringer, S. P.; Jagadish, C.; Liao, X. Effect of a High Density of Stacking
Faults on the Youngs Modulus of GaAs Nanowires. Nano Lett. 2016,
16, 19111916.
(7) Lucas, M.; Wang, Z. L.; Riedo, E. Combined polarized Raman
and atomic force microscopy: In situ study of point defects and
mechanical properties in individual ZnO nanobelts. Appl. Phys. Lett.
2009,95, No. 051904.
(8) Schmidt-Mende, L.; MacManus-Driscoll, J. L. ZnO-nanostruc-
tures, defects, and devices. Mater. Today 2007,10,4048.
(9) Heiss, M.; Conesa-Boj, S.; Ren, J.; Tseng, H.-H.; Gali, A.;
Rudolph, A.; Uccelli, E.; Peiró, F.; Morante, J. R.; Schuh, D.; et al.
Direct correlation of crystal structure and optical properties in
wurtzite/zinc-blende GaAs nanowire heterostructures. Phys. Rev. B
2011,83, No. 045303.
(10) Sieber, B.; Addad, A.; Szunerits, S.; Boukherroub, R. Stacking
faults-induced quenching of the UV luminescence in ZnO. J. Phys.
Chem. Lett. 2010,1, 30333038.
(11) Malakooti, M. H.; Patterson, B. A.; Hwang, H.-S.; Sodano, H. A.
ZnO nanowire interfaces for high strength multifunctional composites
with embedded energy harvesting. Energy Environ. Sci. 2016,9, 634
643.
(12) Kong, K.; Deka, B. K.; Kwak, S. K.; Oh, A.; Kim, H.; Park, Y.-B.;
Park, H. W. Processing and mechanical characterization of ZnO/
polyester woven carbon-fiber composites with different ZnO
concentrations. Composites, Part A 2013,55, 152160.
(13) Kumar, B.; Kim, S.-W. Energy harvesting based on semi-
conducting piezoelectric ZnO nanostructures. Nano Energy 2012,1,
342355.
(14) Kim, K.-H.; Kumar, B.; Lee, K. Y.; Park, H.-K.; Lee, J.-H.; Lee,
H. H.; Jun, H.; Lee, D.; Kim, S.-W. Piezoelectric two-dimensional
nanosheets/anionic layer heterojunction for efficient direct current
power generation. Sci. Rep. 2013,3, No. 2017.
(15) Wang, H.-T.; Kang, B.; Ren, F.; Tien, L.; Sadik, P.; Norton, D.;
Pearton, S.; Lin, J. Hydrogen-selective sensing at room temperature
with ZnO nanorods. Appl. Phys. Lett. 2005,86, No. 243503.
(16) Alenezi, M. R.; Henley, S. J.; Emerson, N. G.; Silva, S. R. P.
From 1D and 2D ZnO nanostructures to 3D hierarchical structures
with enhanced gas sensing properties. Nanoscale 2014,6, 235247.
(17) Bao, J.; Zimmler, M. A.; Capasso, F.; Wang, X.; Ren, Z.
Broadband ZnO single-nanowire light-emitting diode. Nano Lett.
2006,6, 17191722.
(18) Son, D. I.; Kwon, B. W.; Park, D. H.; Seo, W.-S.; Yi, Y.; Angadi,
B.; Lee, C.-L.; Choi, W. K. Emissive ZnO-graphene quantum dots for
white-light-emitting diodes. Nat. Nanotechnol. 2012,7, 465471.
(19) Reddy, A. L. M.; Gowda, S. R.; Shaijumon, M. M.; Ajayan, P. M.
Hybrid nanostructures for energy storage applications. Adv. Mater.
2012,24, 50455064.
(20) Yang, P.; Xiao, X.; Li, Y.; Ding, Y.; Qiang, P.; Tan, X.; Mai, W.;
Lin, Z.; Wu, W.; Li, T.; et al. Hydrogenated ZnO core-shell nanocables
for flexible supercapacitors and self-powered systems. ACS Nano 2013,
7, 26172626.
(21) Ghosh, M.; Ghosh, S.; Attariani, H.; Momeni, K.; Seibt, M.;
Mohan Rao, G. Atomic defects influenced mechanics of IIVI
nanocrystals. Nano Lett. 2016,16, 5969.
(22) Lucas, M.; Mai, W.; Yang, R.; Wang, Z. L.; Riedo, E. Aspect ratio
dependence of the elastic properties of ZnO nanobelts. Nano Lett.
2007,7, 13141317.
(23) Yan, X.; Dickinson, M.; Schirer, J. P.; Zou, C.; Gao, W. Face
dependence of mechanical properties of a single ZnO nano/microrod.
J. Appl. Phys. 2010,108, No. 056101.
(24) He, M.-R.; Zhu, J. Defect-dominated diameter dependence of
fracture strength in single-crystalline ZnO nanowires: In situ
experiments. Phys. Rev. B 2011,83, No. 161302.
(25) Wang, X.; Chen, K.; Zhang, Y.; Wan, J.; Warren, O. L.; Oh, J.;
Li, J.; Ma, E.; Shan, Z. Growth Conditions Control the Elastic and
Electrical Properties of ZnO Nanowires. Nano Letters 2015,15, 7886
7892.
(26) Liu, K.; Wang, W.; Xu, Z.; Liao, L.; Bai, X.; Wang, E. In situ
probing mechanical properties of individual tungsten oxide nanowires
directly grown on tungsten tips inside transmission electron
microscope. Appl. Phys. Lett. 2006,89, No. 221908.
(27) Suzuki, K.; Ichihara, M.; Takeuchi, S. High-resolution electron
microscopy of extended defects in wurtzite crystals. Jpn. J. Appl. Phys.
1994,33, No. 1114.
(28) Ding, Y.; Wang, Z. L. Structures of planar defects in ZnO
nanobelts and nanowires. Micron 2009,40, 335342.
(29) Zardo, I.; Conesa-Boj, S.; Peiro, F.; Morante, J.; Arbiol, J.;
Uccelli, E.; Abstreiter, G.; Morral, A. F. Raman spectroscopy of
wurtzite and zinc-blende GaAs nanowires: polarization dependence,
selection rules, and strain effects. Phys. Rev. B 2009,80, No. 245324.
(30) Panda, J. K.; Roy, A.; Singha, A.; Gemmi, M.; Ercolani, D.;
Pellegrini, V.; Sorba, L. Raman sensitivity to crystal structure in InAs
nanowires. Appl. Phys. Lett. 2012,100, No. 143101.
(31) Yan, Y.; Dalpian, G.; Al-Jassim, M.; Wei, S.-H. Energetics and
electronic structure of stacking faults in ZnO. Phys. Rev. B 2004,70,
No. 193206.
(32) Binks, D. J.; Grimes, R. W. The non-stoichiometry of zinc and
chromium excess zinc chromite. Solid State Commun. 1994,89, 921
924.
(33) Dai, L.; Cheong, W.; Sow, C.; Lim, C.; Tan, V. Molecular
dynamics simulation of ZnO nanowires: size effects, defects, and super
ductility. Langmuir 2010,26, 11651171.
(34) Wang, J.; Kulkarni, A.; Sarasamak, K.; Limpijumnong, S.; Ke, F.;
Zhou, M. Molecular dynamics and density functional studies of a
body-centered-tetragonal polymorph of ZnO. Phys. Rev. B 2007,76,
No. 172103.
(35) Agrawal, R.; Peng, B.; Gdoutos, E. E.; Espinosa, H. D. Elasticity
size effects in ZnO nanowires- a combined experimental-computa-
tional approach. Nano Lett. 2008,8, 36683674.
(36) Kulkarni, A. J.; Zhou, M.; Sarasamak, K.; Limpijumnong, S.
Novel phase transformation in ZnO nanowires under tensile loading.
Phys. Rev. Lett. 2006,97, No. 105502.
(37) Momeni, K.; Attariani, H.; LeSar, R. A. Structural trans-
formation in monolayer materials: A 2D to 1D transformation. Phys.
Chem. Chem. Phys. 2016, 1987319879.
(38) Plimpton, S. Fast parallel algorithms for short-range molecular
dynamics. J. Comput. Phys. 1995,117,119.
ACS Omega Article
DOI: 10.1021/acsomega.6b00500
ACS Omega 2017, 2, 663669
668
(39) Simmons, G.; Wang, H. Single Crystal Elastic Constants and
Calculated Aggregate Properties; M.I.T. Press, 1971.
(40) Kobiakov, I. Elastic, piezoelectric and dielectric properties of
ZnO and CdS single crystals in a wide range of temperatures. Solid
State Commun. 1980,35, 305310.
(41) Bateman, T. Elastic moduli of single-crystal zinc oxide. J. Appl.
Phys. 1962,33, 33093312.
(42) Wang, J.; Kulkarni, A.; Ke, F.; Bai, Y.; Zhou, M. Novel
mechanical behavior of ZnO nanorods. Comput. Methods Appl. Mech.
Eng. 2008,197, 31823189.
(43) Wang, J.; Xiao, P.; Zhou, M.; Wang, Z.; Ke, F. Wurtzite-to-
tetragonal structure phase transformation and size effect in ZnO
nanorods. J. Appl. Phys. 2010,107, No. 023512.
(44) Chen, C.; Shi, Y.; Zhang, Y.; Zhu, J.; Yan, Y. Size dependence of
Youngs Modulus in ZnO nanowires. Phys. Rev. Lett. 2006,96,
No. 075505.
(45) Stukowski, A. Visualization and analysis of atomistic simulation
data with OVITO-the Open Visualization Tool. Modell. Simul. Mater.
Sci. Eng. 2009,18, No. 015012.
(46) Shimizu, F.; Ogata, S.; Li, J. Theory of shear banding in metallic
glasses and molecular dynamics calculations. Mater. Trans. 2007,48,
29232927.
(47) Falk, M.; Langer, J. Dynamics of viscoplastic deformation in
amorphous solids. Phys. Rev. E 1998,57, No. 7192.
(48) Caroff, P.; Dick, K. A.; Johansson, J.; Messing, M. E.; Deppert,
K.; Samuelson, L. Controlled polytypic and twin-plane superlattices in
IIIV nanowires. Nat. Nanotechnol. 2009,4,5055.
(49) Setoodeh, A.; Attariani, H.; Khosrownejad, M. Nickel nanowires
under uniaxial loads: A molecular dynamics simulation study. Comput.
Mater. Sci. 2008,44, 378384.
(50) Harrison, W. A. Electronic Structure and the Properties of Solids:
the Physics of the Chemical Bond; Dover Publications, 2012.
(51) Asthana, A.; Momeni, K.; Prasad, A.; Yap, Y.; Yassar, R. On the
correlation of crystal defects and band gap properties of ZnO
nanobelts. Appl. Phys. A 2011,105, 909914.
(52) Lähnemann, J.; Jahn, U.; Brandt, O.; Flissikowski, T.; Dogan, P.;
Grahn, H. T. Luminescence associated with stacking faults in GaN. J.
Phys. D: Appl. Phys. 2014,47, No. 423001.
(53) Panda, J. K.; Roy, A.; Chakraborty, A.; Dasgupta, I.; Hasanu, E.;
Ercolani, D.; Sorba, L.; Gemmi, M. Strain-induced band alignment in
wurtzite/zinc-blende InAs heterostructured nanowires. Phys. Rev. B
2015,92, No. 205302.
(54) Cheng, G.; Chang, T.-H.; Qin, Q.; Huang, H.; Zhu, Y.
Mechanical properties of silicon carbide nanowires: effect of size-
dependent defect density. Nano Lett. 2014,14, 754758.
ACS Omega Article
DOI: 10.1021/acsomega.6b00500
ACS Omega 2017, 2, 663669
669
... plasticity and dislocation nucleation. Additionally, MD simulations confirmed this strengthening mechanism in SiC [16] and ZnO NWs [17] at T = 0 K and relatively low density of the SFs. These studies predicted the strengthening mechanism, although the stress relaxation mechanism is still unchanged; the stress drops due to the phase transition or fracture. ...
... Also, the formation energy is 14.1 meV/unit-cell area, which is close to the density functional theory calculations 15 meV/ (unit-cell area) [30]; the detailed calculation can be found in Refs. [17,36] . ...
... and an increase of 5.22-8.32% is seen in tensile Young's Modulus in the simulated temperature range. The physics behind this increase in Young's Modulus can be explained by the change in bond nature [11,12,17] and intrinsic SF-induced stress [17]. Due to an overlap between SF-induced stress and surface stress, the atoms at the intersection of SF/free surface undergo a local deformation, as seen in Fig. 3b, and subsequently change the bond characteristics [17]. ...
... In reality designing a defect-free perfect crystal is nearly impossible and generally crystals are rich in irregularities and inhomogeneities, termed as defects [1]. Defects can be intrinsically present, can evolve during synthesis or can be engineered by variety of methods [2] and are known to strongly affect the optical, electrical and mechanical properties materials. These can have farfetched influence in achieving application of high technological excellence in the area of optoelectronics [3], high performance conductors [4], catalysis [5], magnetism [6], etc. Accordingly, the study of evolution of the defects in various technologically important materials has received a good deed of attention from the research community. ...
Article
Full-text available
Defect engineering to tune the light emission properties has been fetching lot of interest among scientific community for designing efficient optoelectronics and light-emitting diodes. Defect evolution in the trivalent ion-doped CeO2 and their dependence on the ionic radii of the trivalent dopant were probed using Rietveld refined powder X-ray diffraction, positron annihilation lifetime and photoluminescence spectroscopy. The photoluminescence of Eu3+, a known structural probe, is monitored with codoping of two other trivalent ions Y3+ and La3+ whose ionic radii are on either side of Eu3+. The studies showed that smaller dopants like Y3+ create oxygen vacancies that are closely associated with Y3+ and codoping does not cause significant enhancement in asymmetry in the emission from Eu3+. At the same time, vacancies created by La3+ are not strongly associated with La3+, and due to their stronger association with Eu3+, the asymmetry in the emission is enhanced. The study shows the usefulness of emission from Eu3+ as probe in understanding the effect of different trivalent dopants using them as codopants to Eu3+. The studies are expected to help in tuning the oxygen vacancy concentration as well as their migration in CeO2 for technological applications such as catalysis, magnetism and conductors.Graphical abstract This work highlighted role of defect engineering in tailoring the optical properties of red emitting CeO2:Eu3+ phosphor via aliovalent and contrasting Y3+ and La3+ co-dopant.
... Defect dynamics play a significant role in electronic, optical, mechanical, and chemical properties across a wide range of materials. 1,2 With proper optimization and design, 3 these defected structures can yield superior properties. Thus, defect engineering is of significant interest in material design and synthesis. ...
Article
Defect dynamics in materials are of central importance to a broad range of technologies from catalysis to energy storage systems to microelectronics. Material functionality depends strongly on the nature and organization of defects-their arrangements often involve intermediate or transient states that present a high barrier for transformation. The lack of knowledge of these intermediate states and the presence of this energy barrier presents a serious challenge for inverse defect design, especially for gradient-based approaches. Here, we present a reinforcement learning (RL) [Monte Carlo Tree Search (MCTS)] based on delayed rewards that allow for efficient search of the defect configurational space and allows us to identify optimal defect arrangements in low-dimensional materials. Using a representative case of two-dimensional MoS2, we demonstrate that the use of delayed rewards allows us to efficiently sample the defect configurational space and overcome the energy barrier for a wide range of defect concentrations (from 1.5 to 8% S vacancies)-the system evolves from an initial randomly distributed S vacancies to one with extended S line defects consistent with previous experimental studies. Detailed analysis in the feature space allows us to identify the optimal pathways for this defect transformation and arrangement. Comparison with other global optimization schemes like genetic algorithms suggests that the MCTS with delayed rewards takes fewer evaluations and arrives at a better quality of the solution. The implications of the various sampled defect configurations on the 2H to 1T phase transitions in MoS2 are discussed. Overall, we introduce a RL strategy employing delayed rewards that can accelerate the inverse design of defects in materials for achieving targeted functionality.
... Although metallurgy has long recognized the importance of defects for the macroscopic mechanical properties (e.g., such as enhanced yield strength of steel), their more widespread influence in other fields of material science is still lacking detailed understanding. Nevertheless, the concept of strain engineering in a vast variety of functional materials is attracting a lot of attention, opening great opportunities for the design and optimization of the mechanical, optical, electrical, or catalytic properties of materials via deliberate defect manipulation [5][6][7] . Crystal defects of various nature and length scales are not always adverse but can instead activate specific functionalities, such as improving adsorption affinity or catalytic activity. ...
Article
Full-text available
Coherent diffraction imaging enables the imaging of individual defects, such as dislocations or stacking faults, in materials. These defects and their surrounding elastic strain fields have a critical influence on the macroscopic properties and functionality of materials. However, their identification in Bragg coherent diffraction imaging remains a challenge and requires significant data mining. The ability to identify defects from the diffraction pattern alone would be a significant advantage when targeting specific defect types and accelerates experiment design and execution. Here, we exploit a computational tool based on a three-dimensional (3D) parametric atomistic model and a convolutional neural network to predict dislocations in a crystal from its 3D coherent diffraction pattern. Simulated diffraction patterns from several thousands of relaxed atomistic configurations of nanocrystals are used to train the neural network and to predict the presence or absence of dislocations as well as their type (screw or edge). Our study paves the way for defect-recognition in 3D coherent diffraction patterns for material science. npj Computational Materials (2021) 7:115 ; https://doi.
... Although metallurgy has long recognized the importance of defects for the macroscopic mechanical properties (e. g. such as enhanced yield strength of steel), their more widespread influence in other fields of material science is still lacking detailed understanding. Nevertheless, the concept of strain engineering in a vast variety of functional materials is attracting a lot of attention, opening great opportunities for the design and optimisation of the mechanical, optical, electrical or catalytic properties of materials via deliberate defect manipulation [5][6][7] . Crystal defects of various nature and length scales are not always adverse but can instead activate specific functionalities, such as improving adsorption affinity or catalytic activity. ...
Preprint
Full-text available
Coherent diffraction imaging enables the imaging of individual defects, such as dislocations or stacking faults, in materials.These defects and their surrounding elastic strain fields have a critical influence on the macroscopic properties and functionality of materials. However, their identification in Bragg coherent diffraction imaging remains a challenge and requires significant data mining. The ability to identify defects from the diffraction pattern alone would be a significant advantage when targeting specific defect types and accelerates experiment design and execution. Here, we exploit a computational tool based on a three-dimensional (3D) parametric atomistic model and a convolutional neural network to predict dislocations in a crystal from its 3D coherent diffraction pattern. Simulated diffraction patterns from several thousands of relaxed atomistic configurations of nanocrystals are used to train the neural network and to predict the presence or absence of dislocations as well as their type(screw or edge). Our study paves the way for defect recognition in 3D coherent diffraction patterns for material science
... With proper optimization and design 3 , these defected structures can yield superior properties. Thus, defect engineering is of significant interest in material design and synthesis [3][4][5][6] . Transitionmetal dichalcogenides (TMDs) tend to exhibit exotic properties with a major potential of being applicable in thermoelectrics and catalysis to nanoscale devices [7][8][9][10][11][12][13][14] . ...
Preprint
Full-text available
Defect dynamics in materials are of central importance to a broad range of technologies from catalysis to energy storage systems to microelectronics. Material functionality depends strongly on the nature and organization of defects, their arrangements often involve intermediate or transient states that present a high barrier for transformation. The lack of knowledge of these intermediate states and the presence of this energy barrier presents a serious challenge for inverse defect design, especially for gradient-based approaches. Here, we present a reinforcement learning (Monte Carlo Tree Search) based on delayed rewards that allow for efficient search of the defect configurational space and allows us to identify optimal defect arrangements in low dimensional materials. Using a representative case of 2D MoS2, we demonstrate that the use of delayed rewards allows us to efficiently sample the defect configurational space and overcome the energy barrier for a wide range of defect concentrations (from 1.5% to 8% S vacancies), the system evolves from an initial randomly distributed S vacancies to one with extended S line defects consistent with previous experimental studies. Detailed analysis in the feature space allows us to identify the optimal pathways for this defect transformation and arrangement. Comparison with other global optimization schemes like genetic algorithms suggests that the MCTS with delayed rewards takes fewer evaluations and arrives at a better quality of the solution. The implications of the various sampled defect configurations on the 2H to 1T phase transitions in MoS2 are discussed. Overall, we introduce a Reinforcement Learning (RL) strategy employing delayed rewards that can accelerate the inverse design of defects in materials for achieving targeted functionality.
... [9,10] Various theoretical and computational methods are utilized to study synthesis of 2D materials [11][12][13][14], specifically the diamondization process, e.g., Molecular Dynamics [7], DFT [4], and ab initio. [11,12] Among these methods, Molecular Dynamics has been widely used to study the phase transformation and surface effects in materials [17][18][19][20][21][22][23][24]. The solid-solid phase transformation, including the graphene→diamond transformation, is a complicated procedure. ...
Article
Diamond is the hardest superhard material with excellent optoelectronic, thermomechanical, and electronic properties. Here, we have investigated the possibility of a new synthesis technique for diamane and diamond thin films from multilayer graphene at pressures far below the graphite → diamond transformation pressure. We have used the Molecular Dynamics technique with reactive force fields. Our results demonstrate a significant reduction (by a factor of two) in the multilayer graphene → diamond transformation stress upon using a combined shear and axial compression. The shear deformation in the multilayer graphene lowers the phase transformation energy barrier and plays the role of thermal fluctuations, which itself promotes the formation of diamond. We revealed a relatively weak temperature dependence of the transformation strain and stresses. The transformation stress vs. strain curve for the bulk graphite drops exponentially for finite temperatures.
Article
Aluminum alloys are among the top candidate materials for in-space manufacturing (ISM) due to their lightweight and relatively low melting temperature. A fundamental problem in printing metallic parts using available ISM methods, based on the fused deposition modeling (FDM) technique, is that the integrity of the final printed components is determined mainly by the adhesion between the initial particles. Engineering the surface melt can pave the way to improve the adhesion between the particles and manufacture components with higher mechanical integrity. Here, we developed a phase-field model of surface melting, where the surface energy can directly be implemented from the experimental measurements. The proposed model is adjusted to Al 7075-T6 alloy feedstocks, where the surface energy of these alloys is measured using the sessile drop method. Effect of mechanics has been included using transformation and thermal strains. The effect of elastic energy is compared here with the corresponding cases without mechanics. Two different geometric samples (cylindrical and spherical) are studied, and it is found that cylindrical particles form a more disordered structure upon size reduction compared to the spherical samples.
Article
Pair matching charge compensation with trivalent and pentavalent dopants in ceria was found to be an attractive strategy in engineering defects with minimal distortions in the lattice and obtaining enhanced catalytic properties. In the present study, charge compensation with a vanadium codopant in trivalent ion doped ceria is studied. Defect evolution in the trivalent ion doped ceria with vanadium codoping has been studied in CeO2:Eu3+, CeO2:La3+,Eu3+ and CeO2:Y3+,Eu3+ systems and the choices of the dopant and co-dopant are triggered by their ionic radius. Eu3+ photoluminescence (PL) is used as a spectroscopic probe to monitor local structural changes around the dopants. Positron lifetime studies showed that oxygen vacancies formed due to trivalent ion doping are weakly associated when larger ions are doped and result in the formation of vacancy aggregates. Positron lifetime studies along with XRD studies show that vanadium codoping effectively removes the vacancies but the distortions are significant when the size mismatch between the pair match used for charge compensation is higher. Photoluminescence demonstrated that the oxygen vacancies associated with Eu are more effectively removed in the case of Y codoped samples. Electron Spin Resonance (ESR) studies suggested that vanadium in excess over the stoichiometric concentration of the trivalent ion can lead to additional defects. These studies are expected to help in tuning the vacancy concentrations as well as controlling the lattice distortions for technological applications such as catalysis, ionic conductivity, etc.
Article
Full-text available
Great efforts have been made to synthesize ZnO nanowires (NWs) as building blocks for a broad range of applications because of their unique mechanical and mechanoelectrical properties. However, little attention has been paid to the correlation between the NWs synthesis condition and these properties. Here we demonstrate that by slightly adjusting the NW growth conditions, the cross-sectional shape of the NWs can be tuned from hexagonal to circular. Room temperature photoluminescence spectra suggested that NWs with cylindrical geometry have a higher density of point defects. In situ transmission electron microscopy (TEM) uniaxial tensile-electrical coupling tests revealed that for similar diameter, the Young's modulus and electrical resistivity of hexagonal NWs is always larger than that of cylindrical NWs while the piezoresistive coefficient of cylindrical NWs is generally higher. With decreasing diameter, the Young's modulus and the resistivity of NWs increase while their piezoresistive coefficient decreases, regardless of the sample geometry. Our findings shed new light on understanding and advancing the performance of ZnO NW based devices through optimizing the synthesis conditions of the NWs.
Article
Full-text available
We study band alignment in wurtzite-zincblende polytype InAs heterostructured nanowires using temperature dependent resonance Raman measurements. Nanowires having two different wurtzite fractions are investigated. Using visible excitation wavelengths in resonance Raman measurements, we probe the electronic band alignment of these semiconductor nanowires near a high symmetry point of the Brillouin zone (E$_{1}$ gap). The strain in the crystal structure, as revealed from the shift of the phonon mode, explains the observed band alignment at the wurtzite-zincblende interface. Our experimental results are further supported by electronic structure calculations for such periodic heterostructured interface.
Article
Full-text available
This paper reports quantitative mechanical characterization of silicon carbide (SiC) nanowires (NWs) via in situ tensile tests inside scanning electron microscopy using a microelectromechanical system. The NWs are synthesized using the vapor–liquid–solid process with growth direction of 111. They consist of three types of structures, pure face-centered cubic (3C) structure, 3C structure with an inclined stacking fault (SF), and highly defective structure, in a periodic fashion along the NW length. The SiC NWs are found to deform linear elastically until brittle fracture. Their fracture origin is identified in the 3C structures with inclined SFs, rather than the highly defective structures. The fracture strength increases as the NW diameter decreases from 45 to 17 nm, approaching the theoretical strength of 3C SiC. The size effect on fracture strength of SiC NWs is attributed to the size-dependent defect density rather than the surface effect that is dominant for single crystalline NWs.
Article
Full-text available
Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a 3C zinc-blende stacking induces a bound state in the gap of the host crystal, resulting in the localization of excitons. Due to the two-dimensional nature of these planar defects, stacking faults act as quantum wells, giving rise to radiative transitions of excitons with characteristic energies. Luminescence spectroscopy is thus capable of detecting even a single stacking fault in an otherwise perfect wurtzite crystal. This review draws a comprehensive picture of the luminescence properties related to stacking faults in GaN. The emission energies associated with different types of stacking faults as well as factors that can shift these energies are discussed. In this context, the importance of the quantum-confined Stark effect in these zinc-blende/wurtzite heterostructures, which results from the spontaneous polarization of wurtzite GaN, is underlined. This discussion is extended to zinc-blende segments in a wurtzite matrix. Furthermore, other factors affecting the emission energy and linewidth of stacking fault-related peaks as well as results obtained at room temperature are addressed. The considerations presented in this article should be transferable also to other wurtzite semiconductors.
Article
Mechanical properties of nanocrystals are influenced by atomic defects. Here, we demonstrate the effect of planar defects on the mechanics of ZnO nanorods using atomic force microscopy, high resolution transmission electron microscopy, and large scale atomistic simulation. We study two different conditionally grown single nanorods. One contains extended $I_{1}$ type stacking fault (SF) and another is defect free. The SF containing nanorods show buckling behaviors with reduced critical loading, whereas the other kinds show linear elastic behavior. We also studied the size dependence of elastic modulus and yield strength. The elastic modulus in both nanorods is inversely proportional to their size. Similar trend is observed for yield strength in the SF containing nanorods, however, the opposite is observed in the SF free nanorods. This first experimental and theoretical study will guide towards the development of reliable electromechanical devices.
Article
Reducing the dimensions of materials to atomic scales results in a large portion of atoms being at or near the surface, with lower bond order and thus higher energy. At such scales, reduction of the surface energy and surface stresses can be the driving force for the formation of new low-dimensional nanostructures, and may be exhibited through surface relaxation and/or surface reconstruction, which can be utilized for tailoring the properties and phase transformation of nanomaterials without applying any external load. Here we used atomistic simulations and revealed an intrinsic structural transformation in monolayer materials that lowers their dimension from 2D nanosheets to 1D nanostructures to reduce their surface and elastic energies. Experimental evidence of such transformation has also been revealed for one of the predicted nanostructures. Such transformation plays an important role in bi-/multi-layer 2D materials.
Article
Stacking faults (SFs) are commonly observed crystalline defects in III-V semiconductor nanowires (NWs) that affect a variety of physical properties. Understanding the effect of SFs on NW mechanical properties is critical to NW applications in nanodevices. In this study, the Young's moduli of GaAs NWs with two distinct structures, defect-free single crystalline wurtzite (WZ) and highly defective wurtzite containing a high density of SFs (WZ-SF), are investigated using combined in situ compression transmission electron microscopy and finite element analysis. The Young's moduli of both WZ and WZ-SF GaAs NWs were found to increase with decreasing diameter due to the increasing volume fraction of the native oxide shell. The presence of a high density of SFs was further found to increase the Young's modulus by 13%. This stiffening effect of SFs is attributed to the change in the interatomic bonding configuration at the SFs.
Article
Continuous power generation from energy harvesting systems is dependent on their mechanical strength as they convert wasted mechanical energy into useful electrical energy. Here, the first generation of high strength, fiber-based energy harvesters is developed through a simple, scalable and cost-effective process. To fabricate these light yet robust energy harvesting materials, vertically aligned ZnO nanowires are grown on the fibers' surface of a woven aramid fabric. The ZnO nanostructured interface is used as a functional unit as well as a reinforcement component. The power harvesting performance of these hybrid composites is demonstrated through direct vibration examination of a fabricated cantilever beam. The fabricated hybrid composite energy harvester beam produced a high open circuit voltage of ∼125 mV root mean square (and ∼0.4 V peak-to-peak) when subjected to a cyclic base acceleration of only 1g root mean square. Moreover, assessing the structural performance of these composites revealed significant increase in the elastic modulus and tensile strength of the composites by 34.3% and 18.4%, respectively. These results indicate that integrating ZnO nanowire arrays not only provides energy harvesting capability, but also enhances the mechanical properties of the composite. This methodology can be considered as the first development of a high strength material with embedded energy harvesting and thus demonstrates multifunctional materials with improved strength and functionality.