Heavy Ion SEU Immunity of a GaAs Complementary HIGFET Circuit Fabricated on a Low Temperature Grown Buffer Layer

Honeywell, MMU, New Jersey, United States
IEEE Transactions on Nuclear Science (Impact Factor: 1.28). 01/1996; 42(6):1850 - 1855. DOI: 10.1109/23.489226
Source: IEEE Xplore


We compare dynamic SEU characteristics of GaAs complementary
HIGFET devices fabricated on conventional semi-insulating substrates
versus low temperature grown GaAs (LT GaAs) buffer layers. Heavy ion
test results on shift register and flip-flop devices from the same
process lot demonstrate that the LT GaAs layer provides immunity from
upsets, even at an LET value of 90 MeV·cm2/mg. This
result is also consistent with pulsed laser measurements performed on
the same flip-flop circuits used in the ion test

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