Article

Room temperature X-ray spectroscopy with a silicon diode detector and an ultra low noise preamplifier

Dipartimento di Elettronica e Informazione, Politecnico di Milano
IEEE Transactions on Nuclear Science (Impact Factor: 1.28). 09/1994; 41(4):1704 - 1709. DOI: 10.1109/23.322776
Source: IEEE Xplore

ABSTRACT

An X-ray spectrograph operating at room-temperature has been
designed and tested. It consists of a small area (1 mm2)
silicon diode detector on a high resistivity bulk and an ultra low noise
preamplifier of new conception. A resolution of 61 RMS electrons (517 eV
FWHM) was measured at 297 K, 34 RMS electrons (288 eV FWHM) at 223 K.
The limits and perspectives for room temperature operation of silicon
planar diode detectors and related front-end electronics are highlighted

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    • "As a rule of thumb at moderate count rates should be chosen of the order of three times the shaping time. In high-resolution X-ray spectroscopy the optimum shaping time can be of the order of 10 for detectors with leakage currents in the pA range [9]. In this case the time constant of the baseline restorer should be as long as 30 . "
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    ABSTRACT: We present a compact, fully integrated, low power baseline restorer for radiation detector readout ASICs. The proposed circuit has been designed, simulated, and layed out using a 0.35 μm CMOS technology. It features an area occupancy of 90×100 μm<sup>2</sup> and a power consumption of 90 μW for 3.3V power supplies, which makes it suitable for highly packed multichannel detector readouts. In the paper the principle of operation of the circuit as well as the results of the simulations are discussed.
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    ABSTRACT: A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at -35°C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at -35°C. At room temperature (25°C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications
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    ABSTRACT: A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at -35°C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at -35°C. At room temperature (25°C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications
    No preview · Article · Sep 1995 · IEEE Transactions on Nuclear Science
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