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Advances in a-C:H based photovoltaic devices
... Hence carbon has attracted the attention of the researchers for its application in solar cells. Carbon based heterostructures such as metal insulator semiconductor (MIS) diodes [1], Scottky diodes [2], metal insulator semiconductor field effect transistor [3], heterojunction diodes [4], and solar cells [2], [5]- [8] on silicon have already been reported and hence thereby demonstrates the potentiality of carbon materials in electronic devices. However, only few works are reported on the photovoltaic properties of C/Si hetero-structures [2], [5]- [7]. ...
... Hence carbon has attracted the attention of the researchers for its application in solar cells. Carbon based heterostructures such as metal insulator semiconductor (MIS) diodes [1], Scottky diodes [2], metal insulator semiconductor field effect transistor [3], heterojunction diodes [4], and solar cells [2], [5]- [8] on silicon have already been reported and hence thereby demonstrates the potentiality of carbon materials in electronic devices. However, only few works are reported on the photovoltaic properties of C/Si hetero-structures [2], [5]- [7]. ...
... Carbon based heterostructures such as metal insulator semiconductor (MIS) diodes [1], Scottky diodes [2], metal insulator semiconductor field effect transistor [3], heterojunction diodes [4], and solar cells [2], [5]- [8] on silicon have already been reported and hence thereby demonstrates the potentiality of carbon materials in electronic devices. However, only few works are reported on the photovoltaic properties of C/Si hetero-structures [2], [5]- [7]. It is worth noting that all the researchers working with carbonaceous solar cells reported the overall photoresponse of their cells. ...
... Hence carbon has attracted the attention of the researchers for its application in solar cells. Carbon based heterostructures such as metal insulator semiconductor (MIS) diodes [1], Scottky diodes [2], metal insulator semiconductor field effect transistor [3], heterojunction diodes [4], and solar cells [2], [5]- [8] on silicon have already been reported and hence thereby demonstrates the potentiality of carbon materials in electronic devices. However, only few works are reported on the photovoltaic properties of C/Si hetero-structures [2], [5]- [7]. ...
... Hence carbon has attracted the attention of the researchers for its application in solar cells. Carbon based heterostructures such as metal insulator semiconductor (MIS) diodes [1], Scottky diodes [2], metal insulator semiconductor field effect transistor [3], heterojunction diodes [4], and solar cells [2], [5]- [8] on silicon have already been reported and hence thereby demonstrates the potentiality of carbon materials in electronic devices. However, only few works are reported on the photovoltaic properties of C/Si hetero-structures [2], [5]- [7]. ...
... Carbon based heterostructures such as metal insulator semiconductor (MIS) diodes [1], Scottky diodes [2], metal insulator semiconductor field effect transistor [3], heterojunction diodes [4], and solar cells [2], [5]- [8] on silicon have already been reported and hence thereby demonstrates the potentiality of carbon materials in electronic devices. However, only few works are reported on the photovoltaic properties of C/Si hetero-structures [2], [5]- [7]. It is worth noting that all the researchers working with carbonaceous solar cells reported the overall photoresponse of their cells. ...
Photoresponse characteristics of photovoltaic (PV) solar cell fabricated from phosphorus (P) doped carbon on p -type silicon (n-C/p-Si heterostructu re) have been studied using experimental observations. The carbon layers of the cells under analysis were deposited on p-type silicon substrate using the targets containing various amounts of phosphorus (1% to 7%) by pulsed laser deposition (PLD) technique. Quantum efficiency of these cells is measured in ultraviolet - visible-infrared (UV-VIS-IR) region (300-1200 nm). The spectral photoresponse characteristics are observed to vary with phosphorus content in the carbon layer. The overall photoresponse characteristics are deconvoluted using Gaussian distributions. The individual contribution of carbon and silicon region is extracted from deconvoluted spectra in accordance with the optoelectronic properties of the carbon layer, such as, defect density, optical gap, etc. The relative contribution due to photon absorption in carbon region is observed to increases with P content for the cells deposited from the target containing up to 5% P and decreases thereafter whereas, the relative contribution of silicon region shows opposite variation.
... In order to dope, the camphoric carbon soot was mixed with varying amount of red P powder (1, 3, 5 and 7% by mass) and compressed into pellets. The undoped carbon film is reported to show p-type characteristics [4]. Therefore, we have deposited P incorporated carbon films on p-type Si substrates. ...
A heterostructure, fabricated by depositing phosphorus (P) doped carbon thin film, thickness of which is about 200 nm, on boron doped crystalline silicon (Si) substrate by pulsed laser deposition (PLD) technique, is studied in terms of its opto-electronic characteristics. Optical transmittance-reflectance measurements, temperature dependent conductivity data and the current density-voltage (J-V) characteristics of the heterostructure are analyzed to estimate device parameters, such as built-in potential, reverse saturation current density, intrinsic carrier concentration and donor concentration in the carbon side of the device for different P content in the target material for carbon. The estimated device parameters are seen to improve with the increase in P content in the target for up to 5% of P. But for 7% of P in the target, the device performance deteriorates. Using these device parameters, capacitance-voltage (C-V) characteristics of the device is simulated. The results are then compared with the experimentally obtained C-V characteristics. The detailed analyses suggests diffusion of P atoms from the film into the Si region during the film deposition by pulsed laser ablation and thus the formation of a P-I-N device rather than a simple P-N junction device. The width of the I region and diffusion co-efficient of P into the Si are estimated and the values are found to be in the acceptable range.
Amorphous carbon (a-C) as a semiconductor in heterojunction solar cells, such as C/Si, C/GaAs, etc., were already reported by various groups. Here, we present the rectifying current-voltage characteristics of n-C/p-C junction. The cell, n-C/p-C on p-Si substrate, reveals a short circuit current density of 23.04 mA/cm2, open circuit voltage of 0.346 V, and a power conversion efficiency of 2.28%, under AM0 and 1 sun illumination conditions. The spectral response of the cell was explained through the absorption characteristics of the two individual carbon layers
Carbon films are deposited by pulsed laser deposition technique in nitrogen (N) environment. Camphor, a natural source is used as a starting precursor for the carbonaceous film. The optoelectronic properties indicate successful doping for the film deposited at low nitrogen content. Photovoltaic characteristics of N incorporated carbon on silicon structure is investigated. The J-V characteristic of N-incorporated carbon (N-C)/p-silicon photovoltaic cell under illumination is observed to improve upon N-incorporation in carbon layer. The photoresponse characteristic is observed to depend strongly on N content of the carbon layer. Gradual spectral shift of the peak with N reveal the structural modifications of the carbon layer due to the incorporation of N
Phosphorus-doped carbon (n-C) films are deposited on p-type silicon substrate by pulsed laser deposition technique using a camphoric carbon soot target. The band diagram of the n-C/p-Si heterojunction has been constructed from temperature dependence conductivity and optical gap measurements. We have estimated a simple discontinuity in conduction band. The conduction band discontinuity is small (0.04eV), therefore, minority carriers in the second semiconductor will not be impeded from flowing across the junction. Phosphorus doped semiconducting carbon obtained from camphoric carbon soot target on silicon is favourable for solar cell applications is predicted
Phosphorous is doped in diamond-like carbon (DLC) films by pulsed (XeCl) laser deposition technique using a camphoric carbon (CC) target, obtained from burning camphor (C10H16O), a natural source. The activation energy of undoped film is approximately 0.17 eV and increased to approximately 0.23 eV for the film deposited from the target containing 1% P. With a further increase of P content, the activation energy decreases to approximately 0.12 eV for the film deposited from the target containing 7% P. Study of activation energy reveals that the Fermi level of the carbon film moves from the valence band edge to near the conduction band edge through the mid-gap. The Tauc gap, conductivity, activation energy together with electron spin resonance (ESR) spectroscopic studies reveal successful doping of P in the films deposited from target containing up to 5% P upon modifications in the gap states.
Thin films (~100 nm) of hydrogenated amorphous carbon (a-C:H) have been prepared by plasma-enhanced chemical vapour deposition (PECVD). Surface analysis techniques such as elastic recoil detection with an electromagnetic filter (ERD ExB), X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) have been used to measure the influence of the arrangement of the internal structure on the retention of hydrogen and the desorption of methane and ethylene from the PECVD carbon films under thermal and ion beam treatments. The parameters of deposition have been adjusted in such a way that the chemical hybridization of the carbon atoms could be tailored (mainly sp2, sp3 or a mix of the two hybridizations). The thermal desorption behaviour appears to be greatly influenced by the sp3/sp2 hybridization ratio of the carbon films. With increasing ratio, desorption of hydrogen is shifted to higher temperatures, ethylene desorption is decreased and methane desorption is increased. Ion beam induced desorption (IBID) also depends on the hybridization ratio of the carbon deposits. IBID and TDS results can be understood in terms of enhanced hydrogen mobility for lower density (lower sp3/sp2 ratio) films accompanied by hydrogen recapture in films with a significant degree of sp2 hybridization.
DLC thin films were grown by XeCl excimer pulsed-laser deposition (PLD) at room temperature using a camphoric carbon (CC) target. To carry out doping, CC soot was mixed with varying amounts (1–7% by mass) of phosphorus (P) powder. The resistivity was observed to increase initially for the films deposited from a target containing 1% P. The resistivity then decreased sharply at first, and gradually thereafter, for the films deposited from targets with a higher P content. Raman, optical gap and the electrical resistivity studies suggest that the P incorporation in carbon films results in controlled doping for the films deposited from targets containing up to 5% P, and a higher P content induces graphitization by narrowing the optical gap.
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