Noise characteristics of GaN-based IMPATTs

Division of Computer Science and Engineering, University of Michigan, Ann Arbor, Michigan, United States
IEEE Transactions on Electron Devices (Impact Factor: 2.47). 08/2001; 48(7):1473 - 1475. DOI: 10.1109/16.930669
Source: IEEE Xplore


The potential of noise characteristics of Wz-phase and Znb-phase
GaN IMPATTs is investigated and compared to Si and GaAs-based IMPATTs at
D-band. The noise of GaN-based IMPATTs is found to be higher than that
of GaAs-based IMPATTs but equivalent to Si-based IMPATTs. For increased
operation temperature, the noise is found to decrease

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    • "The microwave parameters computed in this way are used for the analysis of the IMPATT diodes by incorporating realistic variations of drift velocity (v d /, ionization of the charge carriers and all other material parameters, which are summarized and represented in Refs. [4] [16] "
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    ABSTRACT: A new model is developed to study the microwave/mm wave characteristics of two-terminal GaN-based transfer electron devices (TEDs), namely a Gunn diode and an impact avalanche transit time (IMPATT) device. Microwave characteristics such as device efficiency and the microwave power generated are computed and compared at D-band (140 GHz center frequency) to see the potentiality of each device under the same operating conditions. It is seen that GaN-based IMPATT devices surpass the Gunn diode in the said frequency region.
    Full-text · Article · May 2012 · Journal of Semiconductors
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    • "To the best of the authors' knowledge, no experimental results on fabrication of GaN based IMPATT diodes are available in the literature. However some studies on GaN Impatts have been reported lately [3] [4] [5] [6] [7] [8] [9]. In the sub millimeter / Terahertz region (300 GHz – 3000 GHz) high power IMPATT oscillators are extremely useful solid state sources. "
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    ABSTRACT: High frequency properties and performance of DDR p+pnn+ Wurtzite Gallium Nitride (Wz-GaN) Impatt diodes at Terahertz (THz) frequencies has been investigated for optimum bias current through modeling and computer simulation method. A double iterative computer method based on driftdiffusion model has been used to study the DC and high frequency admittance properties of the device having very thin depletion layers. The optimum bias current is designed with respect to maximum conversion efficiency. The simulation studies show that these devices are excellent candidates for generation of high RF power with high conversion efficiency of 12.3% and 11.4% at 0.3 THz and 0.5 THz for the designed optimum bias current density of 2 x 107 Am-2 and 1.8 x 108 A/m2 respectively. The design results presented in this paper will be useful to realize experimentally Wz-GaN IMPATTs for Terahertz frequencies.
    Full-text · Conference Paper · Jan 2010
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    • "Most of the material parameters of GaN are taken from those used in Refs. [6] [7] and references therein. All the material parameters used for GaAs and AlGaAs are taken from experimental reports which are summarized in the MEDICI manual OE14 . "
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    ABSTRACT: A new technique has been developed to explore the potentiality of the newly emerging GaN material for use as Gunn diode and to study the device characteristics of the device. The results obtained for GaN diode are compared with those for GaAs-based Gunn diode. It is observed that GaN-based Gunn diode can generate two orders of magnitude more power than GaAs-based Gunn diode at similar operating conditions. The reported improvement in the mm-wave/THz-wave performance are supported by the high value of GaN Pf<sup>2</sup>Z figure of merit, which is 50-100 times higher than that for GaAs, indicating a strong potential of GaN for mm-wave signal generation. A detail study and suggestions are provided to the fabricators to fabricate GaN-based Gunn diode of different structures (like general profile, notch, forward and backward injection of the charge carriers, heterostructure etc). A novel method has also described to obtain the first hand data on thermal analysis. An output power of 1400 kW/cm<sup>2</sup> from the GaN Gunn diode as compared to the same of 4.9 kW/cm<sup>2</sup> from GaAs diode is note worthy.
    Full-text · Conference Paper · Jan 2010
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