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Article

For original paper `Approximate analytical solution of generalized
diode equation' by T.A. Fjeldy et al. see ibid., vol.38, no.8, p.1976-7,
Aug. 1991. The authors significantly enhanced the efficiency with which
one may solve the generalized diode equation in numerical circuit
simulation programs. This study concluded that Newton-Raphson iteration
is relatively ill-suited for this task. To the contrary, the commenter
finds that Newton's method is comparable to that of Fjeldly et al. and
discusses the merits of an alternative cubic step and two Newton steps

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... VER since the publication of Shockley's seminal research on p-n junction diodes [1], general diode equation (GDE) has become the de-facto basis of device modeling and circuit simulations [2] enabled over computer simulation program with integrated circuit emphasis (SPICE). Unfortunately, the proposed solutions of this equation are mostly approximate [3][4][5][6][7]. Since an exact solution of the GDE has remained a challenge, most of the research on diode circuit modeling have focused on finding a solution of this equation [3][4][5][6][7]. ...

... Unfortunately, the proposed solutions of this equation are mostly approximate [3][4][5][6][7]. Since an exact solution of the GDE has remained a challenge, most of the research on diode circuit modeling have focused on finding a solution of this equation [3][4][5][6][7]. So, research on verifying or improving the accuracy of the equation in prediction of practical IV characteristics have been very limited. ...

... If i and v are respective current and voltage of a device then an exact solution of its IV equation should be expressible in the form of i = f(v) without any deliberation; therefore, as the exact solution claimed in [6] is not expressible in this form, it is not exact solution with respect to the sense mentioned here; [8] deliberately uses a Lambert W-function such that the basic structure of the GDE gets changed. Since, so far, the solution of GDE takes the form of i = f(v,i), a solution of GDE still remains approximate in nature [3][4][5][6][7]. GDE does have an exact solution in terms of an unknown voltage, i.e. v = f(i) where voltage across a diode may be obtained using an estimated current through it. ...

The general diode equation or the non-ideal diode equation is the foundation of circuit models of active devices for the past several decades. Apart from the effect of p-n junction, this equation also accounts for the series bulk resistance of a diode. Despite a reasonable agreement of the equation with measured IV characteristics, it is shown here that the equation is incompatible with basic theories of circuits and systems. Therefore, a modification in the equation is proposed to remove this incompatibility. This modified equation leads to a compact model of a p-n junction diode that has an excellent agreement with the measured IV characteristics.

... VER since the publication of Shockley's seminal research on p-n junction diodes [1], general diode equation (GDE) has become the de-facto basis of device modeling and circuit simulations [2] enabled over computer simulation program with integrated circuit emphasis (SPICE). Unfortunately, the proposed solutions of this equation are mostly approximate [3][4][5]. Since an exact solution of the GDE has remained a challenge, most of the research on diode circuit modeling have focused on finding a solution of this equation. So, research on verifying or improving the accuracy of the equation in prediction of practical VI characteristics have been very limited. ...

... Since, so far, the solution of GDE takes the form of i = f(v).f(i), a true solution of GDE still remains approximate in nature [3][4][5]. However, if i and v are current and voltage respectively, GDE does have an exact solution in terms of an unknown voltage, i.e. v = f(i) where voltage across a diode may be obtained using an estimated current through it. ...

The general diode equation or the non-ideal diode equation is the foundation of circuit models of active devices for the past several decades. Apart from the effect of p-n junction, this equation also accounts for the series bulk resistance of a diode. Despite a reasonable agreement of the equation with measured VI characteristics, it is shown here that the equation is incompatible with basic theories of circuits and systems. Therefore, a modification in the equation is proposed to remove this incompatibility. This modified equation has an excellent agreement with the measured VI characteristics.

... The authors (Pimbley et al., 1992) used Newton's method provides an accurate solution for negative values of normalized tension, but the precision of the solution is less acceptable for very large values of the normalized tension. Moreover, this method induced a lot of computing time. ...

Abstract: The role of technology and the use of software in the
educational process are growing in recent times. The use of software is essential especially if the analytical method available is too complicated for the students. In this study, we used the Maple software to deal with two physics problems, in the first problem we consider an electrical circuit containing a resistor and two diodes powered by a sinusoidal voltage generator and in the second problem we consider an electrical circuit containing a resistor and a diode powered by a saw tooth voltage generator. For each problem we use Maple software to determine the exact analytical solutions for the current flowing in the different branches of the electronic circuit, we derive analytical expressions for the terminal voltages of all the elements of the circuit, we calculate the dynamic resistances diodes of the circuit and we animate graphic representations to study the influence of certain parameters on the current and the voltages
at the terminals of all the elements of the circuit. The analytical solutions proposed are all expressed as functions of the Lambert W function.
Keywords: The PN Junction Diode, Dynamical Resistances the Diodes,
Lambert W Function, Maple Software, Saw Tooth Excitation Voltage

The influence of electric field and current flow on the current–voltage (I–V) characteristics of TlGaSe2 layered semiconductor was investigated by using a two-point probe measurement system. Threshold-type switching in I–V characteristics associated with current–controlled memory effect was observed in all investigated samples. Observed switching characteristic is close to the most experimentally realizable memristive systems. Experimental findings were analyzed by using a model of metal–insulator–semiconductor–insulator–metal (MISIM) structure having memristive behavior.

This paper presents a new analytic approximation to the general diode equation with the presence of a series resistance. Using exact first- and second-order derivatives and a modified Newton–Raphson formula, a concise analytic approximate solution is derived for the diode equation with the significant improvement on the accuracy and computation efficiency, thus it is very useful for users to implement the diode model and the inversion charge models in other advanced MOSFET compact models such as ACM, EKV and BSIM5 into the circuit simulators, e.g., SPICE for circuit simulation and analysis.

In the present study, we determine exact analytical expressions for the currents and the voltages of the circuit known as diodes-bridge or GraÃ«tz bridge. This circuit is used in electronics as full wave rectifier, it is formed by four non-ideal identical diodes and one diagonal resistance. At the beginning, we determine analytical solution for the transcendental equation giving the output current. Then, we derive analytical expressions for the voltages at the leads of all elements in the circuit. Next, we determine exact expressions for the currents through all the branches of the bridge. Finally, we calculate dynamical resistances of different diodes in the network. The proposed analytical solutions are all expressed as functions of the Lambert W function.

A simple, implicit, relation for the inversion charge density in
the channel of metal oxide semiconductor (MOS) transistors is presented.
The relation is continuous and covers the whole operating range, from
subthreshold to strong inversion. The derivative of the local inversion
charge density with respect to the channel voltage is a simple
expression in the charge density, leading to analytic integrals as
required for obtaining the drain current and the capacitance
coefficients

An approximate but very precise analytical solution is derived of
a generalized diode equation. This solution can be used in the theory of
semiconductor diodes, photodetectors, solar cells, FETs (field-effect
transistors), Gunn domain, and other areas of device physics. The
proposed analytical solution is in excellent agreement with the results
of the numerical calculation