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Composition dependence of phase structure and electrical properties of (1−y)Bi1−x Nd x FeO3−y BiScO3 ceramics

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Abstract

In this work, we have studied a new lead-free ceramic of (1−y)Bi1−x Ndx FeO3-y BiScO3 (0.05≤x≤0.15 and 0.05≤y≤0.15) prepared by a conventional solid-state method, and the influences of Nd and Sc content on their phase structure and electrical properties were investigated in detail. The ceramics with 0.05≤x≤0.10 and 0.05≤y≤0.15 belong to an R3c phase, and the rhombohedral-like and orthorhombic multiphase coexistence is established in the composition range of 0.125≤x≤0.15 and y=0. The electrical properties of the ceramics can be enhanced by modifying x and y values. The highest piezoelectric coefficient (d 33~51 pC/N) is obtained in the ceramics with x=0.075 and y=0.125, which is superior to that of a pure BiFeO3 ceramic. In addition, a lowest dielectric loss (tan δ~0.095%, f=100 kHz) is shown in the ceramics with x=0.15 and y=0 due to the involvement of low defect concentrations, and the improved thermal stability of piezoelectricity at 20–600°C is possessed in the ceramics. We believe that the ceramics can play a meaningful role in the high-temperature lead-free piezoelectric applications.

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Studies of a BiFeO3 synthesis were performed to identify reasons for the appearance of secondary phases, the Bi25FeO39- and Bi2Fe4O9-type phases, in the reaction product. X-ray diffraction and microstructural analyses, performed on samples with different concentrations of impurities, showed that the impurities in the starting material crucially influence the phase composition of the reaction product. A fraction of the generated secondary phases strongly depends on the nature and concentration of the impurities. The experimental results can be explained by the theoretical consideration of ternary phase relations between Bi2O3, Fe2O3, and an impurity oxide. Single-phase polycrystalline BiFeO3 was synthesized from ultrapure starting oxides. To avoid using the expensive ultrapure oxides, techniques for reducing the fraction of the secondary phases in the reaction products were developed.
Article
Pristine (BiFeO3), Pr and Sc co-substituted Bi0.9Pr0.1Fe1−xScxO3 (0.01 ≤ x ≤ 0.07) ceramics have been investigated for their structural (including x-ray diffraction and Raman), morphological and piezoresponse behaviour. Secondary phases observed in pristine BiFeO3 (BFO) ceramic were significantly suppressed in the co-substituted samples. Grain size decreased in the co-substituted samples. Raman study revealed ten active phonon modes which remained almost invariant with co-substitution. Out-of-plane piezoresponse (OPP-PFM) exhibited negative self-polarization effect in the virgin state (without any poling) which has been explained in terms of built-in electric field. The self-polarization effect is largest in 3% Sc co-substituted sample. Poling with ±30 V dc voltage demonstrated both positive and negative domains. Maximum difference in the peak values (from histograms) of such opposite domains was observed in the Bi0.9Pr0.1Fe0.99Sc0.01O3 sample. Information from local measurements (such as PFM) should be useful in deciding such multiferroic materials for device application.
Article
La3+ and V5+ co-doped Bi0.85La0.15Fe1−xVxO3 (BLFVx, x = 0–0.1) ceramics were prepared by a rapid liquid sintering technique. The effects of the V5+-doping content on the structure and electrical properties of BLFVx ceramics were investigated. In the range of the V5+ content x from 0 to 0.03, BLFVx ceramics had a polycrystalline perovskite structure with tiny residual Bi2O3, while an impurity phase appeared for x > 0.03. As the x increased from 0 to 0.1, both the leakage current density and the dielectric loss (tan δ) for BLFVx ceramics decreased gradually, while the dielectric constant (εr) first increased and then decreased gradually in this process, reaching a maximum value of 273 for x = 0.03. Among the BLFVx ceramics, the BLFVx=0.01 ceramic showed a well-saturated hysteresis loop with large remanent polarization (Pr) of 39.4 µC cm−2 and a low coercive electric field (Ec) of ±43.1 kV cm−1 under an applied electric field of ±75 kV cm−1. In addition, these ceramics exhibited good anti-fatigue characteristics after 2 × 1010 read/write polarization cycles. These suggested that La3+ and V5+ co-doping was beneficial for enhancing the dielectric, ferroelectric and anti-fatigue properties of the BLFVx ceramics.
Article
BiFeO3 is perhaps the only material that is both magnetic and a strong ferroelectric at room temperature. As a result, it has had an impact on the field of multiferroics that is comparable to that of yttrium barium copper oxide (YBCO) on superconductors, with hundreds of publications devoted to it in the past few years. In this Review, we try to summarize both the basic physics and unresolved aspects of BiFeO3 (which are still being discovered with several new phase transitions reported in the past few months) and device applications, which center on spintronics and memory devices that can be addressed both electrically and magnetically.
Article
In situ high-resolution synchrotron x-ray diffraction reveals a local minimum in rhombohedral distortion angle α R (associated with an inflection in the lattice constant a R ) near 400 and 350 °C in BiFeO 3 (BFO) and (BiFeO 3 ) 0.95 (BaTiO 3 ) 0.05 (BFO–5%BT), respectively. It suggests a coupling between ferroelectric and magnetic parameters near the antiferromagnetic–paramagnetic transition, which is responsible for the broad frequency-dependent dielectric maxima. A rhombohedral (R)–orthorhombic (O)–cubic (C) transition sequence takes place near 820 and 850 °C in BFO upon heating. BFO–5%BT exhibits a R–C transition near 830 °C. The BaTiO 3 substitution can enhance dielectric and ferromagnetic responses and reduce electric leakage. The dielectric loss of BFO–5%BT remains less than 0.04 below 150 °C.
Article
Single phase Bi <sub>0.9- x </sub> La <sub>0.1</sub> Nd <sub> x </sub> FeO <sub>3</sub> ( BLNFO <sub> x </sub>) ( x =0.05 , 0.07, and 0.1) multiferroic ceramics were prepared to study the effect of combine substitution of La and Nd in BiFeO <sub>3</sub> (BFO). X-ray diffraction studies revealed phase transition from rhombohedral (R3c) to triclinic (P1) on substitution of 05 and 07 mol % of Nd and subsequent transition to monoclinic C2/c with 10 mol % of Nd along with 10 mol % of La. These structural phase transitions and weakening of long range ferroelectric order with increasing x are also confirmed from Raman spectra. The existence of ferroelectricity and the corresponding Curie temperature for all noncentrosymmetric composition were determined using differential thermal analysis. Small remnant magnetization of 0.067 emu/g is observed in ( BLNFO )<sub> x =0.07</sub> as a result of collapse of space modulated spin structure. For pure BFO dielectric anomaly was observed at 355 ° C corresponding to Neel temperature. Due to coexistence of long range ferroelectric order and canted antiferromagnetic orders in ( BLNFO )<sub> x =0.05 and 0.07</sub> the magnetoelectric effects were observed below Neel temperature at 302 and 294 ° C , respectively, near which magnetoelectric coupling is obvious.
Article
Gd-doped BiFeO3 polycrystalline ceramics were synthesized by solid-state reaction method and their dielectric and magnetic properties were investigated. X-ray diffraction pattern showed that Bi1 − xGdxFeO3 (x = 0, 0.05 and 0.1) ceramics were rhombohedral. The Gd substitution has suppressed the usual impurity peaks present in the parent compound and we obtained single phase Bi0.9Gd0.1FeO3 ceramic. Gd substitution reduced the antiferromagnetic Néel temperature (TN) in Bi1 − xGdx FeO3. An anomaly in the dielectric constant(ε) and dielectric loss(tan (δ)) in the vicinity of the antiferromagnetic Néel temperature (TN) was observed. Ferroelectric and magnetic hysteresis loops measured at room temperature indicated the coexistence of ferroelectricity and magnetism. The room temperature magnetic hysteresis loops were not saturated, but the magnetic moment was found to increase with increase in Gd concentration.
Article
Ferroelectric BiFeO3 is rhombohedral with lattice constants, aH=5·5876, cH=13·867 at room temperature. The space group is R3c with two formula units in the unit cell. The atomic positions have been determined employing both X-ray single crystal and neutron powder diffraction. The oxygen atomic positions could be determined only by neutron diffraction and are interpreted as a rotation of rigid octahedra around the trigonal axis by an angle ω=11°40' from the ideal perovskite positions.The X-ray intensities were visually estimated by the multiple film technique using a Weissenberg camera. The cation positions, refined by least-squares, are in good agreement with those determined from neutron powder diffraction analysis. The final results are given with a reliability factor R=0·02 for neutron powder data and R=0·09 for X-ray single crystal data. With respect to the ideal perovskite structure, the cations are shifted along the trigonal axis in accord with the observed dielectric properties.
Article
A method is used to improve the electrical properties of BiFeO(3) thin films by modifying the Bi content in ceramic targets, where all thin films were prepared on SrRuO(3)/Pt/TiO(2)/SiO(2)/Si(100) substrates by radio frequency sputtering. The Bi content in the ceramic target strongly affects the electrical properties of BiFeO(3) thin films. BiFeO(3) thin films prepared by using the ceramic target of Bi/Fe ≈ 1.15 with a molar ratio demonstrate a low leakage current density and a low dielectric loss. Moreover, a larger remanent polarization of 2P(r) ≈ 167.6 μC/cm(2) is also demonstrated for the BiFeO(3) thin films prepared by using the ceramic target of Bi/Fe ≈ 1.15, together with an improved fatigue behavior. Therefore, it is an effective way to improve the electrical properties of bismuth ferrite thin films by modifying the Bi content in ceramic targets.
Article
Migration kinetics of oxygen vacancies in BiFe(0.95)Mn(0.05)O(3) thin film were investigated by the temperature -dependent leakage current as well as the electric field and temperature-dependent impedance spectroscopy. The BiFe(0.95)Mn(0.05)O(3) is of an abnormal leakage behavior, and an Ohmic conduction is observed regardless of varied temperatures and electric fields. The temperature-dependent impedance spectroscopy under different resistance states is used to illuminate different leakage behavior between BiFe(0.95)Mn(0.05)O(3) and pure BiFeO(3). The impedance spectroscopy under a high resistance state shows that the first ionization of oxygen vacancies is responsible for the dielectric relaxation and electrical conduction of BiFe(0.95)Mn(0.05)O(3) in the whole temperature range of 294 to 474 K; the BiFeO(3) exhibits similar dielectric relaxation and electrical conduction behavior in the low-temperature range of 294-374 K, whereas the short-range motion of oxygen vacancies was involved in the high-temperature range of 374-474 K. The impedance spectroscopy under a low resistance state demonstrates that the dielectric relaxation and conduction mechanisms almost keep unchanged for BiFe(0.95)Mn(0.05)O(3), whereas the hopping electrons of Fe(2+)-V(O)(•)-Fe(3+) and Fe(2+)-Fe(3+) are responsible for its dielectric relaxation and conduction mechanism of BiFeO(3). Different impedance spectroscopy under low and high resistance states confirms that an abnormal leakage behavior of BiFe(0.95)Mn(0.05)O(3) is related to different migration kinetics of oxygen vacancies, obviously differing from that of BiFeO(3).
Article
A ferroelectric crystal exhibits a stable and switchable electrical polarization that is manifested in the form of cooperative atomic displacements. A ferromagnetic crystal exhibits a stable and switchable magnetization that arises through the quantum mechanical phenomenon of exchange. There are very few 'multiferroic' materials that exhibit both of these properties, but the 'magnetoelectric' coupling of magnetic and electrical properties is a more general and widespread phenomenon. Although work in this area can be traced back to pioneering research in the 1950s and 1960s, there has been a recent resurgence of interest driven by long-term technological aspirations.
Dielectric and piezoelectric properties of Sb
  • Z H Peng
  • Chen Q Wu
Multiferroic properties of Bi
  • C Sun
  • Y P Wang
  • Y Yang
Electrical control of antiferromagnetic domains in multiferroic BiFeO
  • T Zhao
  • A Scholl
  • F Zavaliche
Leakage mechanisms in rare-earth
  • H Y Qi
  • Y J Qi
The development of BiFeO
  • A Hussain
  • X J Xu
  • G L Yuan
Polarized raman scattering of multiferroic BiFeO
  • K Singh
  • H M Jang
  • S Ryu