Weak antilocalization in gate-controlled Al/sub x/Ga/sub 1-x/N/GaN two-dimensional electron gases
This version is available at http://link.aps.org/abstract/PRB/v73/e241311 Copyright © The American Physical Society Weak antilocalization and the Shubnikov–de Haas effect were investigated in AlxGa1–xN/GaN two-dimensional electron gases. The weak antilocalization measurements on a gated sample revealed a constant spin-orbit scattering length, which does not change if the Al content or the thickness of the AlxGa1–xN barrier layer is varied. The occurrence of spin-orbit coupling is assigned to the lack of crystal inversion symmetry. Although for some of the samples a beating pattern was observed in the Shubnikov–de Haas oscillations, its presence was not attributed to spin-orbit coupling but rather to inhomogeneities in the AlxGa1–xN barrier. The authors thank M. Marso ISG-1 for performing the CV measurements and H. Kertz ISG-1 for assistance during the low-temperature measurements. Fruitful discussions with R. Winkler Northern Illinois University and Yu. Lyanda-Geller Purdue University are gratefully acknowledged.
Data provided are for informational purposes only. Although carefully collected, accuracy cannot be guaranteed. The impact factor represents a rough estimation of the journal's impact factor and does not reflect the actual current impact factor. Publisher conditions are provided by RoMEO. Differing provisions from the publisher's actual policy or licence agreement may be applicable.