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Infrared emissivity modulation technology of WO 3 thin film

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Abstract

The infrared emissivity modulation method by controlling the carriers in material was studied. Based on the theory of electromagnetic wave, the relationship between emissivity and refractive index was discussed. The object with higher refractive index had lower emissivity. The refractive index of a material had relationship with the carrier concentration in it. The emissivity of material could be modulated by controlling the carrier concentration. Magnetron sputtering method was used to prepare WO 3 thin film on ITO glass. The H+ ions and electrons were injected into or extracted out of the film by electrochemical method. The carrier concentration in the film was changed. It had a higher spectral reflectivity with the film of bleached, and a lower spectral reflectivity when the film is colored. The results show that the infrared emissivity can be modulated by controlling the carrier concentration.

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