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PHOTOLUMINESENCE AND TIME RESOVED PHOTOMINESCENCE OF InAs/InP QUANTUM WIRES EMBEDDED IN PHOTONIC CRYSTAL MICROCAVITIES
... This geometry has been investigated using InGaAs QWrs stacked on V-groove patterns on GaAs with the result of laser emission at low temperature under pulsed excitation [6,16]. To this respect, we must note that our PCMs fabricated along the perpendicular QWrs direction ([110]) do not show laser emission which we tentatively attribute to the enhanced surface recombination at the material/air surfaces [17]. On the other hand, laser emission was consistently observed in parallel PCMs fabricated in the same sample. ...
In this work we show room temperature continuous (CW) lasing at 1.5 mum in photonic crystal microcavities with a single layer of self-assembled quantum wires (QWRs). Low threshold values in the range of 1-20 muW (depending on the excitation type, pulsed or CW) have been measured, along high quality factors exceeding Q=55000 using L7-type photonic crystal microcavities. Solid-source molecular beam epitaxy has been used for the synthesis of the InP/InAs epitaxial material comprising a single layer of InAs QWRs. The main axis of the cavity is always parallel to the QWRs, which are more than 1ìm in length along the [1-10] direction. No lasing has been obtained for L7 cavities with axis parallel to the [110] (i.e., perpendicular to the direction of the QWRs), showing the strong one-dimensional character of the QWRs inside the photonic cavity. Under inhomogeneous pulsed excitation the lasing spectra show asymmetric lineshapes and peak splittings first in the mueV and later in the meV ranges as the excitation power is increased.
... This geometry has been investigated using InGaAs QWrs stacked on V-groove patterns on GaAs with the result of laser emission at low temperature under pulsed excitation [6,17]. To this respect, we must note that our PCMs fabricated along the perpendicular QWrs direction ([110]) do not show laser emission which we tentatively attribute to the enhanced surface recombination at the material/air surfaces [18]. On the other hand, laser emission was consistently observed in parallel PCMs fabricated in the same sample. ...
In this work we show room temperature lasing at 1.5 μm in photonic crystal microcavities in air bridge membranes with a single layer of self-assembled quantum wires (QWRs). Low threshold values around 10 μW have been measured, along high quality factors Q ~ 55000 using L7-type photonic crystal microcavities. Solid-source molecular beam epitaxy has been used for the synthesis of the InP/InAs epitaxial material comprising a single layer of InAs QWRs. The main axis of the cavity is always parallel to the QWRs, which grow along the direction. No lasing has been obtained for L7 cavities with axis parallel to the (i.e., perpendicular to the direction of the QWRs), showing the strong one-dimensional character of the QWRs inside the photonic cavity. Under pulsed excitation the lasing spectra show asymmetric lineshapes and an evolution related with thermal and absorption saturation effects.
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