Conference Paper

Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy

Authors:
P. Pungboon Pansila at Kasetsart University (KU-SRC)
P. Pungboon Pansila
  • Kasetsart University (KU-SRC)
K. Kanomata
K. Kanomata
K. Kanomata
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Shigeru Kubota at Yamagata University
Shigeru Kubota
Bashir Ahmmad at Yamagata University
Bashir Ahmmad
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Abstract

Gallium oxide has been expected as a channel material for high-voltage power MOS FETs. In the conventional technologies, gallium oxide has been tried to be fabricated by atomic layer deposition (ALD) at high temperatures from 100-450 °C, although the room-temperature (RT) growth has not been developed. In this paper, we perform the RT ALD of gallium oxide by using a remote plasma technique. We study trimethylgallium (TMG) adsorption and its oxidation on gallium oxide surfaces at RT by infrared absorption spectroscopy (IRAS). The IRAS indicates that TMG is possible to adsorb on the gallium oxide surface by consuming the adsorption sites of surface hydroxyl groups even at RT and the remote plasma-excited water and oxygen vapor is effective in oxidizing the TMG adsorbed surface and regeneration of the adsorption sites for TMG on the surface.

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