In this paper, we present the fabrication of Schottky devices by the photo electrochemical etching of nano
crystalline silicon layer on single-crystal silicon substrates. Porous silicon layers have been prepared from n-type
silicon wafers of (111) orientation. XRD results revealed that the porous layer was nanocrystalline in nature.
We have estimated crystallites size from X-Ray diffraction about nano-scale for porous silicon. Atomic Force
Microscopy AFM shown the etching possesses inhomogeneous microstructures and confirms the nano-metric
size. The influence of the inhomogeneous of porous layer on the Schottky barrier height, built in voltage, series
resistance, shunt resistance, and donor concentration of the devices was studied. I–V methods and dark I–V
measurements, which demonstrate good rectifying behavior. Measurements of Schottky barrier height from
(I–V) and (C–V) of Au/PS/n-Si, Sb/PS/n-Si, and Sn/PS/n-Si structures (Heterojunction) have been described.
The ideality factor of diodes which deduced from I–V characteristics confirms that the recombination current is
dominated at low voltage. C–V investigations indicate that the diodes are abrupt type.