A novel process is developed for fabricating cost-effective, high-yield, and high-quality integrated passive devices on SI-GaAs
substrate. Various material and processing approaches to thin film resistors (TFRs), spiral inductors, and metal-insulator-metal
(MIM) capacitors are evaluated in terms of cost, yield and device performance. For better precision in TFR resistance, we
modify the bottom
... [Show full abstract] metal manufacturing process. For higher spiral inductor quality factor (Q-factor) and yield, a much thicker
second metal and a sputter-etching process is presented. For higher MIM capacitor yield, some optimised mechanisms are used.
To further decrease the cost and increase the yield, SU-8 photo resist is firstly presented as a novel material for forming
the final passivation layer to replace the traditional SiNx. A wireless local area network balun, low-pass filter and digital cellular system power divider are demonstrated by using
this novel manufacturing process; they show very good RF performances in spite of theirs small chip size and low cost, compared
with those of the reported literature.
KeywordsIntegrated passive device (IPD)–Thin film resistor (TFR)–Spiral inductor–Metal-insulator-metal (MIM) capacitor–SU-8–Balun–Low-pass filter (LPF)–Power divider