This paper describes the design considerations for RF power amplifiers in general, including trends in systems, linearity
and efficiency, the PA environment, implementation issues and technology.
As an example a triple-band (900/1800/1900MHz) dual mode (GSM/Edge) power amplifier module is described in this article. The
RF transistors and biasing circuitry are implemented in silicon bipolar
... [Show full abstract] technology. A multi-layer LTCC substrate is used as
carrier.