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Epitaxial growth of Pd2Si films on Si(111) substrates by scanning electron‐beam annealing

Applied Physics Letters

October 1982
41(8)

DOI:10.1063/1.93646

Authors:

Hiroshi Ishiwara

Tokyo Institute of Technology

Pd2Si films were grown epitaxially onto Si(111) substrates by scanning electron‐beam annealing of deposited Pd films. Single phase silicide formation and epitaxial growth were studied by Nomarski optical microscopy, x‐ray diffraction analysis, and Rutherford backscattering and channeling techniques. The crystalline quality of the electron‐beam‐annealed Pd2Si films was weakly dependent on annealing conditions and somewhat worse than that of furnace‐annealed films.

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Translation and revision of Der Aufbau der Zweistofflegierungen "Sponsored by the United States Air Force Through the Wright Air Development Center, Air Research and Development Command under Contract no. AF33(616)-193 with Armour Research Poundation of Illinois Institute of Technology, Chicago" "Suplemento anexo" Incluye bibliografía

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H Ishiwara

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