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REACTION BONDED SILICON CARBIDE:
SFF, PROCESS REFINEMENT AND APPLICATIONS
R. S. Evans, D. L. Bourell, J. J. Beaman and M. I. Campbell
Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX 78712
Abstract
Reaction bonded silicon carbide (RBSiC) has a wide variety of industrial applications and
a manufacturing process based on Selective Laser Sintering (SLS) has been demonstrated in
previous research at the University of Texas. That study was directed toward semiconductor
manufacturing applications and was based on prior indirect SLS methods. Several key research
questions were addressed for three main manufacturing phases: preform SLS, binder burnout and
reactive infiltration. The current research is focused on development of material systems and
manufacturing capability and is directed toward a broader set of potential applications. Preform
formation utilizes SiC powder of an appropriate average particle size mixed with a multi-
component binder. The preform or green part is then placed in a vacuum furnace to carbonize
the binder. The details of the binder chemistry must support accurate SFF shapes and acceptable
surface roughness, a strong green part and maintenance of the part shape during the first furnace
operation. Finally, the physics and chemistry of the infiltration process, based on the
microstructure of the initial green preform, determine the viability of the manufacturing process
and the characteristics of the final composite material.
The functionality of metal, polymer and ceramic matrix composites can support the
growing SFF industry desire to move beyond functional prototyping and into manufacturing
arenas. This project is being explored for more general application to matrix composite
materials, especially highly functional systems tailored specifically for SLS. The goal is to
establish the governing principles of binder function, carbonization and infiltration as well as to
understand the interdependence of these phases in terms of manufacturing application. With this
understanding new applications and special SLS composites can support the development of new
products and a greater SFF manufacturing presence.
This paper provides an introduction to the material, a look at basic rapid manufacturing
trends, an overview of the previous work, a review of relevant RBSiC material science issues,
and an outline of the current study.
Why Silicon Carbide?
Material Properties
SiC is an extremely hard, heat resistant, abrasion resistant, chemical resistant, and
thermally conductive material. However, it is very difficult to manufacture. Fully dense, sintered
varieties of SiC can cost $400 per cubic inch just for raw material. The powdered variety,
however, may be purchased by the boxcar for around $2.00/pound. Discovered over a century
ago, SiC has been the subject of extensive materials research for many decades [Taylor and
Laidler]. Over 140 microstructural variations of the material have been identified, each
414
associated with certain formation parameters and subtle property differences [Babula]. For this
paper, two main variations are important; high temperature a-SiC, formed above 2000°C and
relatively low temperature b-SiC with synthesis at temperatures as low as 1150°C, probably as a
precipitate or gas-phase deposition. Table 1, compiled from several standard sources, illustrates
several advantages of SiC material and puts it in context with aluminum and steel. As with all
ceramics, SiC is brittle. However, some fiber-reinforced SiC composites have shown promising
impact strength.
Material Density Tensile Modulus Flexural Strength
Thermal Cond.
Melt/ Soft Temp.
Silicon Carbide 3.1 kg/m
3
>400 GPa 550 MPa
120 W/m/K
2800°C
RBSiC 2.9 kg/m
3
200-375 GPa 40-450 MPa
110 W/m/K
1375°C
Aluminum 2.7 kg/m
3
62-70 GPa 240 MPa
150-210 W/m/K
550-650°C
Steel 7.8 kg/m
3
~195 GPa 750-2500 MPa
15-35 W/m/K
300-650°C
Table 1 : Material Properties (for basic comparison only)
Figure 1 : RBSiC from Laser Sintered Preform
(http://www.fraunhofer.de/english/press/md-e/md1998/f_1298-f5e.html)
Typical manufacturing processes for SiC are pressureless sintering, gas pressure
sintering, hot pressing, hot isostatic pressing, chemical vapor deposition, re-
crystallization and reaction sintering
-Suyama et al., p.1201
The temperatures, pressures and material preparation of these processes make them costly
and impractical for large scale operations. Reaction sintering (pursuing fully dense SiC) and its
close relative, reaction bonding (creating a matrix composite) as seen in Figure 1, are considered
a-SiC Initial Powder
Si Matrix Material
b-SiC Reaction Formed
415
the most promising fabrication strategies for SiC materials due to their net-shape capabilities,
speed and low cost [Suyama et al., Rajesh and Bhagat]. Suyama, et al., add that the process
imparts almost negligible dimensional changes. Figure 1 shows the main elements of RBSiC; a-
SiC from the starting powder, b-SiC formed during the infiltration process and remaining Si.
Additional details about reactive infiltration are discussed below. Several variations on these
processes are found in industry. The process employed by Poco Graphite (www.poco.com)
involves machining graphite to final part dimensions and a chemical vapor infiltration process to
convert the carbon structure to SiC. Rohm and Haas (www.cvdmaterials.com/silicon.htm)
employs a chemical vapor deposition process directly into SiC. Other companies create
SiC/carbon powder slurries which are molded into part shapes and directly sintered or reaction
infiltrated.
Product Applications
A wide variety of SiC products exist today, as seen in Table 2, but not all of them
represent potential for SLS manufacturing. Many have simple shapes due to the difficulty
involved in making complex shapes with SiC. Others require fully dense SiC, rather than
RBSiC. Finally, those made using certain molding operations are mass produced, which leaves
SLS at a disadvantage. However, the ability of SLS to make nearly any shape could put SiC into
service for entirely new applications.
• Turbine components
• Automotive
• Armor
• Burner Nozzles
• Metal working equipment
• Bearings
• DC Magnetron Sputtering
• Faucet Washers
• Mechanical Seal Faces
• Pulp and Paper
• Semiconductor
• Wear & Corrosion Resistant
Components
• Heat Exchanger Tubing
• Valve & Valve Trim
• Hydrocyclones
• High Temperature /
Thermal Components
• Thermocouple Tubes/Prices
• Kiln Systems
• Beams
• Batts
• Posts and Rollers
• Ball valve parts
• Wear plates
• Kiln furniture
• Brakes
• Foundry equipment
• Heat exchangers
Table 2 : Current Applications of SiC Components
Rapid Manufacturing
Rapid manufacturing (RM) may not soon replace mass production, but the economic
model advanced by Hopkinson and Dickens, as an example, indicates SLS is a viable alternative
to injection molding at product runs up to 14,000 units and with some lower cost RM materials
that number would increase significantly. The fit with foundries has been one of integration into
previously existing manufacturing standards [McDonald, et al., p.87]. The opportunity for
parallel fabrication in SFF also tends to favor smaller parts. Yet, complex parts even now are
more cost effectively produced via RM methods [Pham and Dimov]. As an example, the heat
exchanger assembly for the Pratt and Whitney PW6000 engine is manufactured using SLS to
create the shape of each part before casting in aluminum. The reduced costs of tooling, design
freedom and flexibility have been addressed widely in SFF literature, but what may be more
critical is the importance of materials research for realizing the anticipated impact of RM [Kai &
Fai. p.201, Hague et al.].
416
Rapid manufacturing will become more of a reality when the properties of the
materials that are produced become more acceptable and consistent. This
materials research is one of the main stumbling blocks to (RM)…
-Hague, et al., p.30
Even though SLS has the largest material set among SFF techniques [Ryder, et al.] there is a
long way to go before designers have the range of materials necessary to address a critical mass
of manufacturing tasks [McDonald, et al., p.240]. During this material development a move
from low-volume applications toward higher volumes could proceed with improved RM
processes, increasing the design of products to be made specifically by SFF techniques.
Previous Project Overview
The previous work was driven by a desire to leverage the capabilities of SFF to develop a
new fabrication scheme for RBSiC, particularly for the manufacture of wafer carrier boats. The
resistance of SiC materials to thermal shock and corrosion fits well with the challenging
constraints of high-temperature semiconductor processing. The coefficient of thermal expansion
(CTE) matches well with Si, reducing the particulate contamination and wafer defects when
compared to the more traditional quartz fixtures, and contributes to the estimated 20x service life
over quartz. Wang’s focus was on the physics and chemistry of pressureless liquid Si infiltration
of the porous preforms. She established the basic indirect process used to make SiC from SLS
performs; laser sintering a SiC powder mixed with binder compounds (green part), carbonization
of the binder (brown part) and reactive infiltration of liquid silicon. The novelty of this research
was the use of SLS for the creation of SiC performs for reaction bonding. The main
developments during Wang’s work were an examination of wicking mechanisms in porous
media, an analysis of the SiC forming reactions present and ultimately a fabrication process that
produced viable parts. Figure 2 shows a part made during the previous study.
Figure 2 : (a) A Rendering of a Slotted Horizontal Boat. (b) A Silicon Carbide/Silicon
Composite Boat Produced by Selective Laser Sintering and Silicon Infiltration. Also shown
is a 6-Inch Scale.
Roughly concurrent to the UT work was a study conducted in Germany
[http://ikpindy2.verfahrenstechnik.uni-stuttgart.de/RP_IKP/keramik/SiSiC.html]. The purpose
of that work was to create a high-SiC content final part. Although SLS was used to form the
417
performs several differences existed especially in initial powder and additional resin infiltrations,
presumably to enhance the carbon structure after carbonization. Figure 1 was taken from
information published about that work.
Several key questions from this previous work provide avenues of exploration for the
current research. First, the green strength of the preforms was barely adequate for handling the
parts and preparing them for the furnace operations. A viable manufacturing operation would
need a significant improvement in this area. The density of parts increased both with infiltration
temperature (1450-1600°C) and with dwell time (0.1,1 and 5hrs). The flexural strength was at a
maximum when infiltration was at 1500°C for 1hr and at 1600°C and 0.1hrs. Relatively low
strengths were found at all temperatures for the 5 hr dwell time. The greater final density of
parts that underwent longer infiltration dwell times suggests more SiC growth; however, this
does not necessarily correlate with better final part performance. The differing strength versus
temperature [Wang, p.134] indicates the likelihood that the shorter infiltration (0.1h) has not
developed significant regions where the b-SiC has established a fragmented structure, a
phenomenon discussed below. In other words, although the density of the parts increased, it is
possible that the microstructure supports a weaker final part. Although changing the particle size
is expected to improve surface roughness, as Wang suggests, it can have greater influence on
other parameters such as part strength or infiltration success. Finally, the coefficient of thermal
expansion (CTE) was found to be closer to silicon (~3.5x10
-6
@ 500°C) than pure SiC
(~4.75x10
-6
@ 500°C). The lowest CTE was from samples formed with the 5 hr dwell which
paradoxically suggests lower SiC content.
Successful development of the best composite materials will require deeper
understanding of the formation of SiC during infiltration. The structure of the “green part” and
the “brown part” after binder decomposition need to be improved and correlated to the structure
of the final material. Ultimately, the characteristics of the initial binder and SiC powder mixture
will need to be optimized for the best system of processing and final part characteristics.
Key Issues in New Research Effort
Binder Development
The polymer chemistry and function of each constituent in the previous binder system is
being examined. A new formulation is being developed based on the knowledge from the
previous work, a literature review of liquid infiltration and a focused research effort. The specific
elements of the binder study, including constituent chemistry, rheology and green and brown part
structures are expected to be published separately and are beyond the scope of this paper. It is
anticipated that the uniformity and consistency of the finished parts will be greatly supported by
this work. There is a correlation between surface conditions, particle sizes and the packing
density achievable in the part bed as may be inferred from the work of Paik et al. The final
strength of the material is related to this packing density as well as the dispersion of the
constituent materials. Further, the microstructure of the green preform is intimately related to the
final properties of the infiltrated part. In addition, this work will be a springboard for studying
the mechanics of unsupported, pressureless, reactive infiltration as well as the microstructural
elements that evolve through the entire SFF-based manufacturing process.
418
Material Formation
When liquid Si meets carbon it reacts to form SiC. When a porous (<200 µm pore size)
SiC preform is placed in contact with liquid silicon, the silicon fills the preform to at least a
height of 2m [Wang]. In the following paragraphs a few challenges are discussed that undermine
the simplicity of the previous statements.
A rather significant ~116kJ/mol is released when this reaction occurs [Rajesh and
Bhagat]. Wang observed a local temperature increase of 400°C. This heat of reaction, which
changes based upon the structure of the carbon, influences the formation of SiC and the
characteristics of the final parts. This combined with the significant changes in permeability
observed by Rajesh and Bhagat indicate an influence on wicking kinetics and therefore final
composite microstructure based on temperature at the onset of wicking. It may be possible to
tailor preform characteristics for more rapid or more effective infiltration. Enhanced SiC
formation from “solution reprecipitation” due to the increased exposure of C to Si melt which is
likely due to carbon diffusing from higher temperature regions of the Si melt and supersaturating
others. Favre et al., observed significant SiC growth at the liquid atmosphere boundary, away
from the interface between carbon and silicon which they attributed mainly to the diffusion of
CO
(g)
to the SiC grains within the Si melt. The effects of reaction heating, dissolved carbon and
other transport phemomena need to be addressed.
A thorough understanding of the wetting characteristics and the driving capillary action
from the previous work coupled with a newly available model of transient permeability within
preforms for reaction-formed SiC materials [Rajesh and Bhagat] should provide insight into the
infiltration mechanics. If the Si is introduced to the preform as a melt, the main SiC formation
occurs within the first minute of contact and proceeds to a relatively final thickness of 10-12 µm
at carbon surfaces [Favre, et al.]. After this thickness has been reached further growth is
inhibited by the extremely low diffusion of carbon or Si through SiC. High compression forces
at the grain boundaries cause crystals to break away, causing periodic growth and local breaks
[Favre, et al.]. These breaks cause a sudden exposure of carbon to Si and also cracks in the
carbon surface itself. In small capillary channels the growth of SiC can choke off the subsequent
flow of Si. SiC growth can also occur in other regions where liquid saturation or gas-phase
(specifically Si
(G)
, SiO
(G)
CO and CO
2
) transport supports growth. The quick initial boundary
growth and the liquid surface growth are both promising SiC formation avenues, but must be
understood in practice.
Residual silicon has a detrimental effect on the mechanical properties and reliability of
the finished parts [Paik et al.] with fracture of RBSiC dominated by the failure of the Si matrix
[Fernandez et al.]. This is especially apparent in maximum temperature, acid resistance and
fracture toughness. The sintering study by Suyama et al. generated a remarkably strong sintered
material by, “controlling the residual Si size under 100 nm.” Fernandez, et al., also observed a
significant strength when a continuous SiC structure (from carbonized wood) was a feature of the
infiltrated material. This was corroborated by the work of Dyban where larger SiC particles
(~100µ) maximized the connection of SiC to SiC within the structure of the infiltrated material.
Again, it seems likely that a very capable material may be made, but what is possible within this
manufacturing strategy is unclear.
Basic Research Tasks
419
It is known that the infiltration reaction occurs and that fully dense parts may be created.
Yet, we need to explore the transient permeability, the local temperature effects, the reaction
kinetics, the kinetics of various chemical reactions, and the evolution of the composite
microstructure. These elements must be linked to the nature of the preforms that can be produced
via SLS. We want to create a final material system with an interconnected microstructure of SiC
that supersedes the limitations of a silicon matrix. One key to this may be in the tailoring of the
carbonized brown part which may help to create an interstitial b-SiC structure similar to that
formed in RBSiC created from charcoal as discussed by Fernandez et al. and others. This will be
challenging due to the complexity of SiC formation coupled with the need for a binder material
and initial powder to work within the constraints of SLS processing.
There is a desire to move from proof of concept to a far more refined process and better
finished product. Based on this greater understanding of each manufacturing phase we seek
methods of part design as well as a deeper understanding of this technology in terms of Rapid
Manufacturing. In other words, we want to tie the potential of the microstructure to a system for
understanding the tradeoffs across the manufacturing process and incorporating the design of
finished parts. More generally, we see the development of new materials as a key driver to the
future development of SFF technology in general and expect that this project will generate a
template for the more rapid deployment of additional powder-based composite materials in SLS
systems.
Conclusion
In this paper we have discussed SiC material, specifically in a reaction bonded form and
its applications. The previous work conducted at UT has provided a good foundation for the
current effort. The desire within the SFF industry to support more manufacturing presence will
require more extensive research into highly functional materials that may be manipulated
effectively into useful shapes. This particular material system is complicated but we are
confident that it will yield a viable manufacturing alternative for a variety of applications and
serve as a basis for additional SFF materials research.
References
Babula, A. J., “Silicon Carbide : Its Nonabrasive Electrical Properties and Applications,” IEEE
Potentials, Feb./Mar. 1997, p.27-30
Cooper, K. G., Rapid Prototyping Technology : Selection and Application, Marcel Dekker, New
York (2001)
Dimla, D. E., Singh, H., Day, M., “Fabrication of Functional Metal Parts Using Laser Sintering –
A Case Study,” Third National Conference on Rapid Prototyping, Tooling, and Manufacturing
Proceedings, 20-21 June 2002, Professional Engineering Publishing, London, p.115-122 (2002)
Dyban, Y., “Structuring of Multiphase Compacts in the SiC-Carbon System. I. Structuring in
Green Blanks,” Powder Metallurgy and Metal Ceramics, V. 40, No.1-2 (2001)
Dyban, Y., “Structuring of Multiphase Compacts in the SiC-Carbon System. II. Structuring
During Sintering,” Powder Metallurgy and Metal Ceramics, V. 40, No.5-6 (2001)
420
Dyban, Y., “Structuring of Multiphase Compacts in the SiC-Carbon System. III. Structuring in
Green Blanks,” Powder Metallurgy and Metal Ceramics, V. 41, No.3-4 (2002)
Favre, A., Fuzellier, H., Suptil, J., “An Original Way to Investigate the Siliconizing of Carbon
Materials,” Ceramics International, V. 29, p.235-243 (2003)
Fernandez, J. M., Muñoz, A., Lopez, A.R. D., Feria, F. M. V., Dominguez-Rodriguez, A., Singh
M., “Microstructural-Mechanical Properties Correlation in Siliconized Silicon Carbide
Ceramics,” Acta Materialia, V. 51, p.3259-3275 (2003)
Fischer, P., Karapatis, N., Romano, V., Glardon, R., Weber, H. P., “A Model for the Interaction
of Near-infrared Laser Pulses with Metal Powders in Selective Laser Sintering,” Applied Physics
A., V. 74, pp.467-474 (2002)
Groover, M. P., Fundamentals of Modern Manufacturing : Materials, Processes and Systems,
John Wiley and Sons, New York (2002)
Hague, R., Campbell, I., Dickens, P., “Implications on Design of Rapid Manufacturing,” Journal
of Mechanical Engineering Science, V. 217, pp. 25-30, (2003)
Hopkinson, N., Dickens, P., “Analysis of Rapid Manufacturing – Using Layer Manufacturing
Processes for Production,” Journal of Engineering Science, V. 217, pp.31-39 (2003)
Kai, C. C., Fai, L. K., Rapid Prototyping : Principles & Applications in Manufacturing, John
Wiley & Sons, Singapore (1997)
King, D., Tansey, T., “Rapid Tooling: Selective Laser Sintering Injection Tooling,” Journal of
Materials Processing Technology, V.132, pp.42-48 (2003)
Lind, J., Kotila, J., Syvänen, T., Nyrhilä, “Dimensionally Accurate Inserts and Metal
Components by Direct Metal Laser Sintering,” Materials Research Society Symposium
Proceedings, V. 625, pp. 45-50 (2000)
McDonald, J. A., Ryall, C. J., Wimpenny, D. I.(editors), Rapid Prototyping Casebook,
Professional Engineering Publishing Limited, London (2001)
Paik, U., Park, H. C., Choi, S. C., Ha, C. G., Kim, J. W., Jung, Y. G., “Effect of Particle
Dispersion on Microstructure and Strength of Reaction-bonded Silicon Carbide,” Materials
Science and Engineering, A334, pp.267-274 (2002)
Pham, D. T., Dimov, S. S., “Rapid Prototyping and Rapid Tooling – The Key Enablers for Rapid
Manufacturing,” Journal of Mechanical Engineering Science, V. 217, pp.1-23 (2003)
Rajesh, G., Bhagat, R. B., “Infiltration of Liquid Metals in Porous Compacts: Modeling of
Permeabilities During Reactive Melt Infiltration,” Transport in Porous Media, V.36, p. 43-68
(1999)
Ryder, G. J., Harrison, D. K., Green, G., Ion, W. J., Wood, B. M., “Benchmarking the Rapid
Design and Manufacture Process,” Third National Conference on Rapid Prototyping, Tooling,
and Manufacturing, 20-21 June 2002, High Wycombe, UK, p.97-104, Professional Engineering
Publishing, London (2002)
Suyama, S., Kameda, T., Itoh, Y., “Development of High-strength Reaction-sintered Silicon
Carbide,” Diamond and Related Materials, V. 12, p.1201-1204 (2003)
421
Taylor, A., Laidler, D. S., “The Formation and Crystal Structure of Silicon Carbide,” British
Journal of Applied Physics, V.1, No. 7, p.174-181, (1950)
Wang, H.Y., “Advanced Processing Methods for Microelectronics Industry Silicon Wafer
Handling Components,” Dissertation, The University of Texas at Austin, December 1999
422
