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Atomic hydrogen in the Si8O12 cage
Abstract
Contrary to nitrogen and phosphorous, atomic hydrogen is not stable in C60 at room temperature. However, recently it was reported that hydrogen can be stabilized the a cube-like cage of Si8O12. In the present experiment the endohedral system HatSi8O12Et8 (Et=ethyl) was produced by ion implantation using ion implantation on a growing Si8O12-film.
We report on the synthesis of hydrogen atoms in different Si8O12R8 cages (R = (CH2)(n)H with n = 0-3) by both radiation chemistry and ion implantation. The efficiencies of both mechanisms have been studied quantitatively and attempts to optimise the process have been made. Spectral properties and relaxation times were investigated using both cw and pulsed EPR measurements. The Hahn Echo decay behaviour and the dependence of T-1 and T-2 on the side groups R of the cage revealed information about the predominant relaxation mechanisms.
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