Article

An innovative platform for high-throughput high-accuracy lithography using a single wafer stage

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Abstract

For 32 nm half-pitch node, double patterning is recognized as the most promising technology since some significant obstacles still remain in EUV in terms of technology and cost. This means much higher productivity and overlay performance will be required for lithography tools. This paper shows the technical features of Nikon's new immersion tool, NSR-S620 based on newly developed platform "StreamlignTM" designed for 2nm overlay, 200wph throughput and 2week setup time. The S620 is built basically upon Nikon's Tandem Stage and Local Fill Nozzle technology, but has several additional features. For excellent overlay, laser encoders with short optical path are applied for wafer stage measurement in addition to interferometers. By using this hybrid metrology, the non-linearity of the encoder scale can be easily calibrated, while eliminating the air fluctuation error of interferometer. For high throughput, a method with a new alignment microscope system and a new auto focus mapping, called Stream Alignment is introduced. It makes it possible to reduce the overhead time between the exposures remarkably. The target productivity is 4,000 wafer outs per day. Accuracy is also improved because many more alignment points and a continuous wafer height map without stitching are available. Higher acceleration and faster scan velocity of the stages are also achieved by optimal vibration dynamics design and new control system. The main body, including the projection lens, is isolated by Sky Hook Technology used already on the NSR-SF150 and SF155 steppers, and also the reticle stage is mechanically isolated from the main body. With this new platform, the imaging performance can be maximized.

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... 149 In high-accuracy applications such as microlithography, turbulence can often be the leading source of uncertainty. 150 Turbulence also affects the measurement through direct interactions of the airflow with components within the metrology loop such as mirrors and mounts, resulting in vibrations that contribute to the observed optical path length fluctuations. ...
... 18,220 Modern lithography tools may use a combination of optical encoders (see Section 4.8) and conventional interferometers to overcome air turbulence. These two systems complement each other: The short air path typical of encoders minimizes the effects of air turbulence, thus realizing an improvement in short-term repeatability, 150 while the conventional interferometer provides superior linearity when compared to the nonlinearities encountered in the encoder gratings. 150,205 The limitations imposed by air turbulence disappear in vacuum environments, such as those encountered in reflective electron-beam lithography 153,221 and EUVL 152,222 systems. ...
... These two systems complement each other: The short air path typical of encoders minimizes the effects of air turbulence, thus realizing an improvement in short-term repeatability, 150 while the conventional interferometer provides superior linearity when compared to the nonlinearities encountered in the encoder gratings. 150,205 The limitations imposed by air turbulence disappear in vacuum environments, such as those encountered in reflective electron-beam lithography 153,221 and EUVL 152,222 systems. Microlithography for flat-panel displays poses its own special challenges. ...
Chapter
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... Recognizing that optical encoders minimize the air turbulence contribution by reducing the air paths, the photolithography industry now uses high-performance encoders to monitor the critical stage motions during wafer exposure [3,[7][8][9][10][11]. ...
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The problem of the alignment tree for double patterning (DP) is presented. When the 2nd DP exposure is aligned to the underlying zero layer, the space CD uniformity is shown to be well outside the budget for the 32 nm HP node. Aligning the 2nd DP layer to the zero layer gives better overlay results, but aligning the 2nd DP pattern to the 1st DP pattern gives results well within the overlay requirements for the 32 nm HP. Aligning the 2nd DP layer to the 1st DP layer is recommended to give the best CD uniformity and overlay results. Experimental results show, qualitatively, the CD uniformity is significantly worse when the 2nd pattern is aligned to the zero layer, but the overlay for both alignment trees could be corrected to roughly the same levels. The raw overlay data shows a significantly different signature for the two alignment trees, possibly caused by alignment mark signal differences between the marks on the zero and 1st layers, or distortion of the zero layer after the first etch. The requirements for a DP exposure tool were reviewed and can be summarized as improved dose control, improved overlay performance, and significantly higher throughput.
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Double patterning (DP) has become the most likely candidate to extend immersion lithography to the 32 nm node and beyond. This paper focuses on experimental results of 32nm half pitch patterning using NSR-S620D, the latest Nikon ArF immersion scanner. A litho-freeze-litho (LFL) process was employed for this experiment. Experimental results of line CDU, space CDU, and overlay accuracy are presented. Finally, a budget for pitch splitting DP at the 22 nm half pitch is presented.
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Currently, it is considered that one of the most favorable options for the 32 nm HP node is pitch-splitting double patterning, which requires the lithography tool to achieve high productivity and high overlay accuracy simultaneously. In the previous work [1], we described the concepts and the technical features of Nikon's immersion scanner based on our newly developed platform, Streamlign, designed for 2nm overlay, 200wph throughput, and short setup time. In this paper, we present the latest actual performance of S620D with the Streamlign platform. Owing to the high repeatability of our new encoder metrology system, Bird's Eye Control, and Stream Alignment, S620D achieves less than 2 nm overlay accuracy, less than 15nm focus accuracy, and successful 32 and 22 nm L/S pitchsplitting double patterning exposures. Furthermore, the results at high scanning speed up to 700 mm/s are fine and we have successfully demonstrated over 4,000 wpd throughput, which confirms the potential for high productivity. Nikon has developed this Streamlign as an optimized long life platform based on the upgradable Modular2 structure for upcoming generations. The performance of S620D indicates the possibility of immersion extension down through the 22 nm HP node and beyond.
Article
Double patterning (DP), an extension of immersion, is the leading contender for the manufacturing of 32 nm half pitch node devices. For DP, substantial improvement in overlay accuracy is required to meet the CDU requirements for the 32 nm node, and substantial increase in throughput is required to meet the cost requirements. To meet these challenges, Nikon introduced the NSR-S620. The S620 is based on the Streamlign platform, which is characterized by three innovations: Bird's Eye Control, Stream Alignment, and Modular2 Structure. In addition, many of the current systems and techniques have been refined to meet the requirements for DP. This presentation will discuss these technological improvements and show the latest technical results.
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Critical processing factors in the lithography process include overlaying the pattern properly to previous layers and properly exposing the pattern to achieve the desired line width. Proper overlay can only be attained in the lithography process while the desired line width accuracy is achieved by both lithography and etch processes. Since CD is substantially influenced by etch processing, therefore, it is possible to say that overlay is one of the most important processing elements in the lithography process. To achieve the desired overlay accuracy, it is desirable to expose critical layers with the same exposure tool that exposed the previous or target layer. This need to dedicate a particular exposure tool, however, complicates the lot dispatching schedule and, even worse, decreases exposure tool utilization. In order to allow any exposure tool available to print the arriving lot, M&M (Mix and Match) overlay control becomes necessary. By reducing overlay errors in M&M control, lot dispatching scheduling will become more flexible and exposure tool utilization will improve. Since each exposure tool has a unique registration signature, high order errors appear when overlaying multiple layers exposed with different tools. Even with the same exposure tool, if a different illumination is used, a similar error will be seen. A correction scheme to make the signature differences has to be implemented, however manually characterizing each tool's signature per illumination condition is extremely tedious, and is subject human errors. The challenge is to design a system to perform the corrections automatically. In the previous paper(1), we have outlined concepts of the system scheme. The system has subsequently been developed and tested using exposure tools. In this paper test results are shown using automated distortion correction. By analyzing the results, suggestions for further improvements and further developments are shown.
Article
Double patterning is recognized as the best candidate for 32 nm half-pitch lithography. Currently pitch splitting processes are being considered for logic processes and spacer processes are being considered for memory. In pitch splitting, errors in overlay between the first and second exposure become CD errors on the final pattern. For this reason, overlay requirements are severe for pitch splitting double patterning. Revised CD and overlay budgets are presented, as well as technical requirements to satisfy these budgets. Spacer processes do not have similar restrictions on overlay, so they can be achieved using current immersion tools. Exposure tool requirements for double patterning are discussed and modifications to current platforms are described.