Article

Cathodic electrochemiluminescence at double barrier Al/Al 2O 3/Al/Al 2O 3 tunnel emission electrodes

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Abstract

Double insulating barrier tunnel emission electrodes were fabricated by adding a new pure aluminum layer upon oxidized aluminum electrodes by vacuum evaporation and thermally oxidizing the new aluminum layer in air at room temperature. Resulting Al/Al2O3/Al/Al2O3 electrodes allow the use of various aluminum alloys in the electrode body necessary for hardness or shaping ability of the electrode while obtaining the luminescence properties of pure aluminum oxide. During electrical excitation of luminescent labels by cathodic hot electron injection into aqueous electrolyte solution, the background noise is mainly based on high-field-induced solid-state electroluminescence and F-center luminescence of the outer aluminum oxide film. The more defect states and/or impurity centers the outer oxide film contains, the higher is the background emission intensity. The present electrode fabrication method provides a considerable improvement in signal-to-noise ratio for time-resolved electrochemiluminescence (TR-ECL) measurements when the original native oxide film of the electrode body contains luminescence centers displaying long-lived luminescence. The excellent performance of the present electrodes is demonstrated by extremely low-level detection of Tb(III) chelates, luminol, Pt(II) coproporphyrin and Tb(III) labels in an immunometric immunoassay by time-resolved electrochemiluminescence.

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Article
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Article
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Article
Cathodic pulse polarisation of oxide-covered aluminium electrodes can generate electrochemiluminescence (ECL) from metalloporphyrins. This is based on the tunnel emission of hot electrons into aqueous electrolyte solution, which probably results in the generation of hydrated electrons as reducing mediators. These tunnel emitted electrons allow the production of highly reactive radicals, such as sulfate radicals from peroxodisulfate ions, which can induce strong redox luminescence from various organic chemiluminophores including metalloporphyrins. The work presented here illustrates the generation of ECL from platinum(II) coproporphyrin (PtCP) and its bovine serum albumin (BSA) conjugate. This allows the detection of these molecules below nanomolar concentrations and over several orders of magnitude of concentration. The relatively long luminescence lifetime of PtCP allows discrimination from the background ECL signal using time resolved measurements, leading to higher sensitivity and the detection of PtCP-BSA indicates the potential use of metalloporphyrins as labels in ECL-based bioassays such as immunoassays and DNA-binding assays.
Article
Hot electron injection into aqueous electrolyte solution was studied with electrochemiluminescence and electron paramagnetic resonance (EPR) methods. Both methods provide further indirect support for the previously proposed hot electron emission mechanisms from thin insulating film-coated electrodes to aqueous electrolyte solution. The results do not rule out the possibility of hydrated electron being as a cathodic intermediate in the reduction reactions at cathodically pulse-polarized thin insulating film-coated electrodes. However, no direct evidence for electrochemical generation of hydrated electrons could be obtained with EPR, only spin-trapping experiments could give information about the primary cathodic steps.
Article
The luminescence lifetime of the electrochemiluminescence of luminol was studied at oxide-coated silicon and aluminum electrodes. In an undivided cell, the ECL was found to be produced only by cathodic processes, and luminol could be detected down to picomolar levels with time-resolved measurements
Article
High amplitude cathodic pulse polarization of ultra thin oxide film-coated heavily doped silicon electrodes induces tunnel emission of hot electrons into aqueous electrolyte solution, which probably results in the generation of hydrated electrons in the vicinity of the electrode surface. The method allows the detection of tris (2,2'-bipyridine) ruthenium(II) chelate at subnanomolar concentration level. This paper shows that both n- and p-type heavily doped silicon electrodes can be used, illustrates the effect of oxide film thickness upon the silicon electrode on the intensity of ECL of tris (2,2'-bipyridine) ruthenium(II) and discusses the basic features of tris (2,2'-bipyridine) ruthenium(II) chelate-specific ECL at these electrodes. Thin oxide film-coated silicon electrodes provide a lower blank emission and a higher ECL intensity of the present ruthenium chelate than oxide-covered aluminium electrodes. This suggests that thin oxide film-coated silicon is a very promising working electrode material, especially in microanalytical systems made fully or partly of silicon. (c) 2004 Elsevier B.V. All rights reserved.
Article
Low temperature (to 83 K) vacuum emission of hot electrons from silicon dioxide films is reported. This technique is specifically used to study the temperature dependence of the electronic distributions emerging into vacuum from very thin (50–60 Å) oxide layers where a significant number of the electrons have traveled through the insulator ballistically. The measured energy distributions of the emerging carriers are shown to reflect the temperature‐dependence of the distribution of the electron source in the silicon substrate at the abrupt interface with the silicon dioxide layer, particularly the Fermi tail, and possibly quantized levels in the silicon accumulation layer. The other features in the electron distributions are shown to be due to single phonon scattering of ballistic electrons in the silicon dioxide layer. Additionally, it is shown that as the oxide thickness is increased, the distribution broadens into its steady‐state characteristic, showing very little temperature dependence. All data are shown to be in good agreement with a temperature‐dependent, Monte Carlo simulation that includes the details of the electron source function at the interface of the silicon substrate and the oxide layer.
Article
Leakage currents introduced in the low‐field, direct‐tunneling regime of thin oxides during high‐field stress are related to defects produced by hot‐electron transport in the oxide layer. From these studies, it is concluded that the ‘‘generation’’ of neutral electron traps in thin oxides is the dominant cause of this phenomenon. Other mechanisms due to anode hole injection or oxide nonuniformities are shown to be unrealistic for producing these currents. Exposure of thin oxides to atomic hydrogen from a remote plasma is shown to cause leakage currents similar to those observed after high‐field stress, supporting the conclusion that these currents are related to hydrogen‐induced defects. © 1995 American Institute of Physics.
Article
The primary processes occurring at cathodically polarized oxide-covered aluminum electrode are discussed in detail. It is pointed out that more energetic cathodic processes can be induced in aqueous media at thin insulating film-coated electrodes than at any semiconductor or active metal electrode. It is proposed that tunnel emission of hot electrons with energies well above the level of the conduction band edge of water occur, and the thermalization and solvation of the emitted electrons can result in generation of hydrated electrons. The cathodically pulse-polarized oxide-covered aluminum also generates a strong oxidant (or oxidants) at the oxide/electrolyte interface, and it is proposed that this species is the hydroxyl radical which is generated either by cathodic high field-induced ejection of self-trapped holes as oxygen dianions (i.e. oxide radical ions) into the electrolyte solution, or by the action of anion vacancies and/or F+-centers as the primary oxidants capable of oxidizing hydroxide ions or the hydroxyl groups of the hydroxylated surface on the oxide film. These radicals, hydrated electrons/hydroxyl radicals, can act as mediating reductants/oxidants in reduction/oxidation of solutes. The formation of the primary species is monitored by electrochemiluminophores which cannot be cathodically excited at active metal electrodes in fully aqueous solutions, but which can be chemically excited in aqueous media in the simultaneous presence of highly reducing and highly oxidizing radicals.
Article
Heterogeneous and homogeneous immunoassays of human thyroid stimulating hormone (hTSH) were developed on immunometric basis using aromatic Tb(III) chelates as electrochemiluminescent labels and varied types of disposable oxide-covered aluminum electrodes as the solid phase of the immunoassays. The long luminescence lifetime of the present labels allows the use of time-resolved electrochemiluminescence detection and provide the low detection limits of these labels and, thus, sensitive immunoassays. The primary antibody of immunometric immunoassays was coated upon aluminum oxide surface by physical absorption. In homogeneous immunoassays using 66 μl cell and 15 min incubation time, a linear calibration range of 0.25–324 μU/ml was obtained by applying only a single cathodic excitation pulse in the detection step of the assay.
Article
A homogeneous immunoassay of T4 was developed using a semiautomatic electrochemiluminometer modified from a commercially available fluorometer. In addition, from the same analyte panel an immunometric immunoassay of TSH at similar disposable oxide-covered aluminum rake electrodes was studied using this instrument both on homogeneous and heterogeneous basis. Detection was based on hot electron-induced cathodic electrochemiluminescence utilizing a commercially available Tb(III) chelate label. The assays were reasonably sensitive and comparison was made with other older methods. Thus, it is possible to develop both non-competitive and competitive immunoassays based on detection of hot electron-induced ECL of the labels.
Article
Photoluminescence spectra of thin-film aluminium oxide samples on aluminium show spectral lines at ca. 330 and 420 nm that are attributed to the F+ and F centers of aluminium oxide, respectively. Experimental results reveal that the F centers are responsible for the intrinsic cathodic luminescence of an oxide-covered aluminium electrode, too. The mechanism of the luminescence is based on charge transfer reactions at the oxide/electrolyte interface.
Article
Cathodic pulse polarisation of thin insulating film-coated electrodes enables the generation of electrochemiluminescence (ECL) by tunnel emission of hot electrons from the Fermi level of the conductor material of the conductor–insulator–aqueous electrolyte solution junction to the solutes at the vicinity of the electrode surface and probably also to the conduction band of water. The latter process can generate hydrated electrons as strongly reducing slightly longer-lived cathodic intermediates, which are known to be able to induce chemiluminescence (CL) of various types of luminophores having very different photophysical and chemical properties. The generation of the above-mentioned cathodic primary species provides good possibilities to use many types of luminophores as label molecules in sensitive immuno and DNA-probing assays. This paper introduces an electrochemiluminoimmunoassay (ECLIA) for human thyroid stimulating hormone (hTSH) at oxide-coated n-silicon electrodes and demonstrates the suitability of silicon electrodes covered with thermally grown silicon dioxide film as disposable working electrodes (WEs) in sensitive time-resolved ECL (tr-ECL) measurements in aqueous solution. The label chelate can be detected almost down to picomolar level and the calibration curve of the chelate covers more than five orders of magnitude of chelate concentration. Also the calibration curve of the immunometric hTSH assay was found to be linear over a wide range of hTSH concentration, the detection limit of the hormone being below 1 mU l−1 (4 pmol l−1).
Article
A detailed theoretical study of impact-ionization-related transport phenomena in SiO2 thin films is presented. The Boltzmann transport equation is integrated by the Monte Carlo method using acoustic-phonon-scattering rates derived from photoinduced electron transmission experiments. It is shown that these empirical scattering rates necessitate the inclusion of impact ionization at fields F>Fiith=7 MV/cm because phonon scattering alone can no longer stabilize the electron energy distribution below the ionization energy of 9 eV. However, even above Fiith, acoustic-phonon scattering is found to considerably delay the heating of electrons, leading to a wide dark space in which impact ionization cannot take place or is strongly reduced. Therefore, the electron multiplication factors m(F,tox) decrease rapidly with decreasing oxide thickness, tox, for tox=25 nm. The field and thickness dependence of the measured positive charge buildup (hole trapping) near the Si/SiO2 interface can be quantified in terms of impact ionization in the oxide film. The calculated carrier multiplication, however, cannot fully account for the substrate hole currents and the hole trapping measured in thinner oxides, tox
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