A Strategy for Patterning Conducting Polymers Using Nanoimprint Lithography and Isotropic Plasma Etching

State Key Laboratory of Supramolecular Structure and Materials, Jilin University Changchun, PR China.
Small (Impact Factor: 8.37). 03/2009; 5(5):583-6. DOI: 10.1002/smll.200801197
Source: PubMed


A method for decreasing the lateral size of the patterned conducting polymer (CP) was demonstrated using nanoimprint lithography (NIL) and isotropic plasma etching. Iron chloride (FeCl3), aniline, tridecafluoro-1,1,2, 2-tetrahydrooctyl-trichlorosilane and N-(3-tri- methoxysilylpropyl)pyrrole (py-silane), PMMA, silver nitrate and citric acid were used without further purification. All water was distilled and subsequently purified to Millipore quality. The silicon wafers with a 100-nm thermally oxidized SiO2 slices and quartz substrates were sonicated consecutively in bath of acetone, chloroform, ethanol, and pure water for 5 mm each. A 400-nm film PMMA was spin-coated on the PANI(polyaniline) layer followed by baking 120°C for 5 mm to remove residual solvent. A PANI patterned substrate was obtained after etching off the residual layer of PMMA and PANI on the recess area, where the PANI was protected by the PMMA resist layer. The result demonstrate that the PANI pattern is of high selectivity for silver nanoparticle absorption.

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Available from: Lifeng Chi, Jan 11, 2015
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