Article

Kinetics of fixation of phase holograms in LiNbO3

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Abstract

Fixation of phase holograms in LiNbO3 is observable above 100 °C and is caused by transport of ions. From an analysis of the fixation kinetics a concentration of these ions of 2 × 1017 cm−3 and a diffusion constant at 180 °C of 5 × 10−13 cm2/s are determined. Si and OH ions suggested previously to be associated with fixation do not seem to be responsible for fixation. The development of fixed holograms by uniform illumination is based on a modulation of the optical absorption produced during fixation.Das Fixieren von Phasenhologrammen in LiNbO3 wird oberhalb 100 °C beobachtet und wird durch den Transport von Ionen verursacht. Aus der Analyse der Kinetik des Fixierens wird die Konzentration dieser Ionen zu 2 × 1017 cm−3 bestimmt und ihre Diffusionskonstante bei 180 °C zu 5 × 10−13 cm2/s. Si- und OH-Ionen, die bereits mit der Fixierung in Zusammenhang gebracht wurden, scheinen nicht für die Fixierung verantwortlich zu sein. Die Entwicklung fixierter Hologramme durch gleichmäßige Belichtung beruht auf einer Modulation der optischen Absorption, die beim Fixieren entsteht.

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... The ability of a photorefractive material to erase through charge re-excitation also results in the undesired erasure of stored holograms during normal readout, and even gradual erasure in the dark through thermal excitation (173). Recorded holograms can be "fixed" -i.e. made semi-permanent and resistant to erasure during readout -by separate thermal (94,98,113,(191)(192)(193)(194)(195)(196)(197)(198) or electronic (178,179,199,200) processes. Unfortunately, this fixing process affects all the stored holograms within a volume simultaneously, and tends to be slow and cumbersome. ...
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The conditions for the incorporation of OH− ions on O– ion lattice sites and on interstitial sites are derived from the Li/Nb ratio and an anti-Frenkel disorder of the LiNbO3 crystals. OH− ions substituting O– ions cause an absorption band at 2.865 μm and have a mobility of v(OHo−) = = 400 KT−1 exp (−13120 K/T) cm2/Vs. OH− ions on interstitial sites show the vibrational absorption band at 2.875 μm. Their mobility is higher than that of the OHo− ions: v(OHi−) = = 670 KT−1 exp (−12540 K/T) cm2/Vs. The absorption bands at 2.865 and 2.875 μm are connected with very weak absorptions at 2.248 and 2.255 μm, respectively. The results are discussed and compared with those for Ba2NaNb5O15 crystals.Die Bedingungen für den Einbau von OH−-Ionen auf O–- und Zwischengitterpltzen werden aus dem Li/Nb-Verhltnis und einer Anti-Frenkel-Fehlordnung der LiNbO3-Kristalle abgeleitet. OH−-Ionen auf O–-Pltzen verursachen eine Absorption bei 2,865 μm und haben eine Beweglichkeit v(OHo−) = 400 KT−1 exp (−13120 K/T) cm2/Vs. OH−-Zwischengitterionen absorbieren bei 2,875 μm und haben eine höhere Beweglichkeit als die OHo−-Ionen: v(OHi−) = 670 KT−1 X X exp (−12540 K/T) cm2/Vs. Die Absorptionsbanden bei 2,865 und 2,875 μm werden von sehr schwachen Absorptionen bei 2,248 bzw. bei 2,255 μm begleitet. Die Ergebnisse werden diskutiert und mit denen für Ba2NaNb5O15-Kristalle verglichen.
Article
Partial reversal of spontaneous polarization in iron-doped LiNbO3 crystals takes place at room temperature in an external field of 104 V cm−1, as proved by the Barkhausen effect. Similarly, the formation of an internal photorefractive field of 104 V cm−1 leads to partial ferroelectric switching in the illuminated region of crystal. The dependences of the number of Barkhausen jumps on the external and internal fields are in close agreement.In Eisen-dotierten LiNbO3-Kristallen findet teilweise Umkehr der spontanen Polarisation bei Zimmertemperatur in einem äußeren Feld von 104 V cm−1 statt, wie durch Barkhauseneffekt nachgewiesen wird. In ähnlicher Weise führt die Bildung eines inneren photorefraktiven Feldes von 104 Vcm−1 zu partiellem ferroelektrischem Schalten im belichteten Teil des Kristalls. Die Abhängigkeit der Zahl der Barkhausensprüngen vom äußeren und inneren Feld befinden sich in enger Übereinstimmung.
Article
A mobile ionic species fixes thick‐phase holograms in Fe‐doped LiNbO 3 crystals at temperatures between 100 and 200 °C. Results are given which show that Si ions are mobile at 200 °C in these crystals.
Article
This paper describes the results of an investigation into techniques for obtaining erasure resistant holograms in electro‐optic crystals. The most successful approach made use of thermally activated ionic drift during or after recording. The samples are heated for about 30 min at 100°C to obtain optically nonerasable holograms with as much as 50% diffraction efficiency in LiNbO 3 or in doped Ba 2 NaNb 5 O 15 .
Article
Single‐crystal lithium niobate has been used as a holographic storage medium. The material undergoes a change in refractive indices upon exposure to suitably intense light thus allowing it to act as a pure‐phase, volume‐holographic medium requiring no processing. The holograms formed have high diffraction efficiencies and are thermally erasable. The high resolution obtained suggests that such material may be useful in high‐capacity, changeable optical information storage, processing and display devices.
Article
After defining photoferroelectrics as photosensitive and nonlinear electrooptic materials, we report electrical control of holographic diffraction efficiency in PLZT ceramics and electrical fixation and erasure of holograms recorded in SBN single crystals. On the basis of experimental data, these effects are explained in terms of the local field amplitude, computed as the sum of the applied field and the photoinduced space charge field and high nonlinear electrooptic effects associated with ferroelectric phase transitions.