Ultradense and planarized antireflective vertical silicon nanowire array using a bottom-up technique

SiNaPS Laboratory SP2M, UMR-E CEA/UJF-Grenoble 1, CEA/INAC, 17 Avenue des Martyrs, Grenoble 38054, France. .
Nanoscale Research Letters (Impact Factor: 2.78). 03/2013; 8(1):123. DOI: 10.1186/1556-276X-8-123
Source: PubMed


The production and characterization of ultradense, planarized, and organized silicon nanowire arrays with good crystalline and optical properties are reported. First, alumina templates are used to grow silicon nanowires whose height, diameter, and density are easily controlled by adjusting the structural parameters of the template. Then, post-processing using standard microelectronic techniques enables the production of high-density silicon nanowire matrices featuring a remarkably flat overall surface. Different geometries are then possible for various applications. Structural analysis using synchrotron X-ray diffraction reveals the good crystallinity of the nanowires and their long-range periodicity resulting from their high-density organization. Transmission electron microscopy also shows that the nanowires can grow on nonpreferential substrate, enabling the use of this technique with universal substrates. The good geometry control of the array also results in a strong optical absorption which is interesting for their use in nanowire-based optical sensors or similar devices.

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    • "It leads to small differences in the wires’ height, as shown in Figure 4d. In order to remove the parasite wires and obtain a perfectly homogeneous array, all wires are grown out of the alumina layer, and a method using ultrasound and plasma is used to selectively etch the wires above the alumina matrix [40]. "
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