Article

Record Performance of Electrical Injection Sub-wavelength Metallic-Cavity Semiconductor Lasers at Room Temperature

Optics Express (Impact Factor: 3.49). 02/2013; 21(4):4728-4733. DOI: 10.1364/OE.21.004728
Source: arXiv

ABSTRACT

We demonstrate a continuous wave (CW) sub-wavelength metallic-cavity semiconductor laser with electrical injection at room temperature (RT). Our metal-cavity laser with a cavity volume of 0.67λ3 (λ = 1591 nm) shows a linewidth of 0.5 nm at RT, which corresponds to a Q-value of 3182 compared to 235 of the cavity Q, the highest Q under lasing condition for RT CW operation of any sub-wavelength metallic-cavity laser. Such record performance provides convincing evidences of the feasibility of RT CW sub-wavelength metallic-cavity lasers, thus opening a wide range of practical possibilities of novel nanophotonic devices based on metal-semiconductor structures.

Download full-text

Full-text

Available from: P.J. van Veldhoven
  • Source
    • "Similar to that seen for the vertical contact (Fig. 4a), the effect of undercut on the constriction resistance is more profound for smaller gain radius. In reported electrically pumped nanolasers[1],[9],[10], the semiconductor materials above the gain region is always n-doped and those below the gain region p-doped. As a result of the larger resistivity of p-doped materials in the bottom pedestal and bottom contact thin film, the constriction resistance is much larger compared to that in the top vertical contact (Fig. 7avs. "
    [Show abstract] [Hide abstract]
    ABSTRACT: We evaluate the constriction resistance and current crowding in nanolasers using the finite-element method based calculations. We examine both the vertical contact and horizontal contact structures, representing the typical top contact and bottom contact of nanolasers, respectively. We find that, in general, constriction resistance and the degree of current crowding in the bottom horizontal contact in nanolasers are much larger than those in the top vertical contact. For both contacts, constriction resistance and, therefore, the degree of current crowding increase as the nanolaser radius decreases, the amount of undercut increases, or the angle (either positive or negative) of the sidewall tilt increases. The location where most current crowding and most Joule heating occur is identified. The results may provide insights into the design optimization of nanolasers.
    Full-text · Article · Jan 2016 · IEEE Journal of Quantum Electronics
  • Source
    • "In the case of electrical injection, the dielectric also serves as the electrical insulation layer and the passivation layer. CW operation in this type of nanolaser was later demonstrated at 140 K under electrical pumping [21], and, most recently, at room temperature [22]. We focus our discussion here on metallo-dielectric nanolasers, as a promising avenue toward dense chip-scale integration at room temperature and higher. "
    [Show abstract] [Hide abstract]
    ABSTRACT: As the field of semiconductor nanolasers becomes mature in terms of both the miniaturization to the true sub-wavelength scale, and the realization of room temperature devices, the integrated treatment of multiple design aspects beyond pure electromagnetic consideration becomes necessary to further advance the field. In this review, we focus on one such design aspect: temperature effects in nanolasers. We summarize recent efforts in understanding the interplay of various temperature-dependent parameters, and study their effects on optical mode and emission characteristics. Building on this knowledge, nanolasers with improved thermal performance can be designed, and their performance evaluated. Although this review focuses on metal-clad semiconductor lasers because of their suitability for dense chip-scale integration, these thermal considerations also apply to the broader field of nanolasers.
    Full-text · Article · Jan 2015 · Nanophotonics
  • Source
    • "To become a mature technology, MCSELs need to perform reliably with continuous wave (CW), room-temperature (RT) operation under electrical pumping (EP). While CW-RT-EP operation was demonstrated in [5], improved understanding of the temperature dependence of MCSEL operation remains in need. Herein, we report on several analyses of the temperature effects in MCSELs "
    [Show abstract] [Hide abstract]
    ABSTRACT: We perform two analyses on temperature effects in Metal-Clad Subwavelength Semiconductor Lasers (MCSELs). Firstly, we analyze the temperature dependence of the threshold gain in the infinite waveguide approximation. We show that the dielectric layer of the semiconductor-dielectric-metal composite waveguide (CWG) becomes increasingly important as temperature increases. However, we further show that the optimal geometry of the CWG is nearly invariant with the temperature. Secondly, we relax the infinite waveguide assumption with the fully 3D finite element method, and analyze the temperature dependence of the spontaneous emission factor, β. We identify a cavity geometry that mitigates detuning between the dominant cavity mode and emission spectra. Ignoring coupling to freespace modes, we explain that the modified cavity may lead to a MCSEL with large β (~0.5) for all temperatures.
    Full-text · Article · Feb 2014 · Proceedings of SPIE - The International Society for Optical Engineering
Show more