Analysis on switching mechanism of graphene oxide resistive memory device

Journal of Applied Physics (Impact Factor: 2.18). 08/2011; 110(4):044506-044506-5. DOI: 10.1063/1.3624947


Recently, a flexible resistive switching memory device using graphene oxide was successfully demonstrated. In this work, the new findings on the switching mechanism of the graphene oxide memory are presented through a comprehensive study on the switching phenomena. It has been found that the switching operation of graphene oxide resistive switching memory (RRAM) is governed by dual mechanism of oxygen migration and Al diffusion. However, the Al diffusion into the graphene oxide is the main factor to determine the switching endurance property which limits the long term lifetime of the device. The electrode dependence on graphene oxide RRAM operation has been analyzed as well and is attributed to the difference in surface roughness of graphene oxide for the different bottom electrodes.

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    • "Recently, hexagonal boron nitride (h-BN) has been utilized as a novel gate dielectric; this material shows promising electrical and dielectric properties in transistor devices, but integration and scaling are still challenging14. One type of graphene-based insulator, graphene oxide (GO), is often applied as a gate dielectric material in electronic devices, such as resistive random-access memory (RRAM) and thin film transistors151617181920. However, the low thermal stability of GO reduces its dielectric resistivity, which is a drawback since thermal processing steps are often used during device fabrication. "
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