Conference Paper

Temperature dependent carrier lifetime images

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Carrier Density Imaging (CDI) is a convenient tool to measure actual lifetimes in silicon with high spatial resolution. CDI is based on the detection of infrared radiation being absorbed and emitted by free carriers. Recently, a measurement mode was developed where the experimental conditions favors the emission of free carriers. This article exemplifies the advantages of emission CDI. Measurement time can be decreased to 1 s for standard multicrystalline silicon and excellent signal to noise ratios can be achieved if the temperature of the sample is increased moderately. Measuring lifetime in a wide temperature range up to 270 °C enables spatially resolved lifetime spectroscopy. First results of an intentionally contaminated molybdenum sample and a sample of multicrystalline silicon are presented.

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The measurement of free carrier density in silicon is a crucial parameter for the characterisation of silicon solar cell material. Carrier Density Imaging (CDI) is a valuable tool to obtain spatially resolved images of the free carrier density distribution. This article describes the experimental setup of CDI for absorption mode and recently developed emission mode measurements. The theoretical dependence of the absorption and emission of infrared radiation on the free carrier density is discussed. Results of absorption and emission mode measurements are presented and the advantages of the new emission mode are elaborated.
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