CMOS compatible polarization splitter using hybrid plasmonic waveguide

ArticleinOptics Express 20(23):25345-55 · November 2012with15 Reads
DOI: 10.1364/OE.20.025345 · Source: PubMed
Abstract
We design and experimentally demonstrate an ultrashort integrated polarization splitter on silicon-on-insulator (SOI) platform. Our polarization splitter uses a hybrid plasmonic waveguide as the middle waveguide in a three-core arrangement to achieve large birefringence, allowing only transverse-magnetic (TM) polarized light to directionally couple to the cross port of the directional coupler. Finite-difference time-domain (FDTD) and eigenmode expansive (EME) calculations show that the splitter can achieve an extinction ratio of greater than 15 dB with less than 0.5 dB insertion losses. The polarization splitter was fabricated on SOI platform using standard complementary metal-oxide-semiconductor (CMOS) technology and measured at telecommunications wavelengths. Extinction ratios of 12.3 dB and 13.9 dB for the transverse-electric (TE) and TM polarizations were obtained, together with insertion losses of 2.8 dB and 6.0 dB.
    • "Polarization state control of the light is of great interest for many photonic circuit applications, especially for systems operating with one single polarization [1]. One way to address this issue is to split light into two orthogonal polarizations utilizing a polarization beam splitter (PBS) [2,3]. While the solution involving a PBS is satisfactory, it comes at a price of increased system complexity. "
    [Show abstract] [Hide abstract] ABSTRACT: We propose a novel optical microfiber-loaded plasmonic TE-pass polarizer consisting of an optical microfiber placed on top of a silver substrate and demonstrate its performance both numerically by using the finite element method (FEM) and experimentally. The simulation results show that the loss in the fundamental TE mode is relatively low while at the same time the fundamental TM mode suffers from a large metal dissipation loss induced by excitation of the microfiber-loaded surface plasmonic mode. The microfiber was fabricated using the standard microheater brushing-tapering technique. The measured extinction ratio over the range of the C-band wavelengths is greater than 20 dB for the polarizer with a microfiber diameter of 4 μm, which agrees well with the simulation results.
    Full-text · Article · Apr 2016
    • "It is noted that the optimal gap values of h g and w g are ∼20 and ∼50 nm for both polarizations, corresponding to the highest ERs, whereas ILs are not sensitive to the variation of the gap height or width. For keeping ER>16 (14) dB for TE (TM) mode, h g and w g need to be controlled within ranges from 14 to 26 nm and 46 to 57 nm, respectively, which can be realized with the state-of-the-art fabrication [13], [23]. To fabricate such device, a SOI wafer with 300 nm thick top silicon layer is used. "
    [Show abstract] [Hide abstract] ABSTRACT: A compact silicon-based polarization splitter (PS) is proposed using a three-guide directional coupler composed of a silicon nanowire in the center and two horizontal/vertical hybrid-plasmonic waveguides (HPWs) at outer sides. Utilizing the evanescent coupling, the injected TE/TM modes in the central silicon nanowire can be only coupled to the horizontal/vertical HPWs, leading to the separation of input polarizations. Moreover, to improve the extinction ratio (ER), an S-bend connecting with the vertical HPW is employed. Results show that a coupling length of 6.5 (4.5) μm is achieved at the wavelength of 1.55 μm with ER and insertion loss of ~18.9 (15.2) dB and ~0.44 (0.89) dB for TE (TM) mode, and the bandwidths can cover the entire C-band for both polarizations. In addition, fabrication tolerances to the structural parameters are presented and field evolution through the designed PS is also demonstrated.
    Full-text · Article · Mar 2015
    • "Silicon-hybrid plasmonic optical interconnects is another rapidly evolving technology. Due to the reduction of mode size much below the diffraction limit, extremely compact devices (sub-100nm dimensions) can be realized [components have been proposed and demonstrated, including power splitters [214, 215] and polarization splitters/converters216217218219220221, microring resonators222223224225, modulators226227228229230231, switch [232]. A review on recent developments can be found in [233]. "
    [Show abstract] [Hide abstract] ABSTRACT: Silicon photonics has experienced phenomenal transformations over the last decade. In this paper, we present some of the notable advances in silicon-based passive and active optical interconnect components, and highlight some of our key contributions. Light is also cast on few other parallel technologies that are working in tandem with silicon-based structures, and providing unique functions not achievable with any single system acting alone. With an increasing utilization of CMOS foundries for silicon photonics fabrication, a viable path for realizing extremely low-cost integrated optoelectronics has been paved. These advances are expected to benefit several application domains in the years to come, including communication networks, sensing, and nonlinear systems.
    Full-text · Article · Feb 2015
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