170 GHz Uni-Traveling Carrier Photodiodes for InP-based photonic integrated circuits

Optics Express (Impact Factor: 3.49). 08/2012; 20(18):20090-5. DOI: 10.1364/OE.20.020090
Source: PubMed


We demonstrate the capability of fabricating extremely high-bandwidth Uni-Traveling Carrier Photodiodes (UTC-PDs) using techniques that are suitable for active-passive monolithic integration with Multiple Quantum Well (MQW)-based photonic devices. The devices achieved a responsivity of 0.27 A/W, a 3-dB bandwidth of 170 GHz, and an output power of -9 dBm at 200 GHz. We anticipate that this work will deliver Photonic Integrated Circuits with extremely high bandwidth for optical communications and millimetre-wave applications.

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