Article

Exciton quantum confinement in nanocones formed on a surface of CdZnTe solid solution by laser radiation

Nanoscale Research Letters (Impact Factor: 2.78). 09/2012; 7(1):514. DOI: 10.1186/1556-276X-7-514
Source: PubMed

ABSTRACT

The investigation of surface morphology using atomic force microscope has shown self-organizing of the nanocones on the surface of CdZnTe crystal after irradiation by strongly absorbed Nd:YAG laser irradiation at an intensity of 12.0 MW/cm2. The formation of nanocones is explained by the presence of a thermogradient effect in the semiconductor. The appearance of a new exciton band has been observed after irradiation by the laser which is explained by the exciton quantum confinement effect in nanocones.

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Available from: Aleksandr Mychko, Mar 26, 2014
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    • "Instead of the thermal annealing the pulsed laser annealing [6] [7] provides a highly localized annealing effect. The irradiation of CdZnTe semiconductor crystal with nanosecond laser pulses has been used for the modification of structural , electrical and optical properties, as well as to induce changes in chemical composition [8] [9] [10] [11]. "
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    ABSTRACT: The present paper deals with the laser ablation in CdZnTe crystal irradiated by pulsed infrared laser. Two values of threshold intensities of the laser ablation were determined, namely of about 8.5 and 6.2 MW/cm2 for the incident and the rear surfaces, correspondingly. Lower intensity of the laser ablation for the rear surface is explained by thermal self-focusing of the laser beam in the CdZnTe crystal due to heating of Te inclusions with a following hydrodynamic expansion.
    Full-text · Article · Oct 2015 · Applied Surface Science
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    • "This method is expensive; it requires vacuum, high temperature and a long annealing time ($ 100 h). Recently, we have shown compositional and structural modification of the CdTe and CdZnTe surfaces by a Nd:YAG laser (λ ¼ 532 nm) [8] [9] [10]. After laser irradiation, the intensity of the D1X exciton line in photoluminescence (PL) spectrum caused by the Cd interstitials atoms increased, but the intensity of the A1X exciton line produced by V Cd on contrary, decreased. "

    Full-text · Article · Jul 2015
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    • "This method is expensive; it requires vacuum, high temperature and a long annealing time ($ 100 h). Recently, we have shown compositional and structural modification of the CdTe and CdZnTe surfaces by a Nd:YAG laser (λ ¼ 532 nm) [8] [9] [10]. After laser irradiation, the intensity of the D1X exciton line in photoluminescence (PL) spectrum caused by the Cd interstitials atoms increased, but the intensity of the A1X exciton line produced by V Cd on contrary, decreased. "
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    ABSTRACT: The aim of this work is to study the possibility to improve of CdZnTe radiation detector parameters using pulsed Nd:YAG laser radiation. It was observed that after irradiation by the laser leakage current of CdZnTe detector has decreased. Simultaneously increasing energy resolution of the detector takes place, especially at low energies. This effect is explained by small defects precipitation.
    Full-text · Article · Jan 2011
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