Nonradiative processes at low temperature in Er,O‐codoped GaAs grown by organometallic vapor phase epitaxy

physica status solidi (c) 07/2008; 5(9):2864 - 2866. DOI: 10.1002/pssc.200779285


Er-related photoluminescence (PL) properties have been investigated in Er,O-codoped GaAs (GaAs:Er,O) grown by organometallic vapor phase epitaxy. The GaAs:Er,O which was slightly doped with Er exhibited both strong Er-related and band-edge luminescence. In the temperature dependence of the Er-related PL intensity, the intensity decreased with increasing temperature from 4.2 K to 30 K. The temperature region was quite coincident with the region where the Carbon-related PL intensity decreased. This behaviour implies the existence of a Carbon-related nonradiative process in GaAs. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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