Spectroscopic and lasing studies of Ce3+:Er3+:Yb3+:YVO4 crystals

Laser Physics Letters (Impact Factor: 2.46). 10/2011; 8(10):729 - 735. DOI: 10.1002/lapl.201110056


Absorption and fluorescence spectra and fluorescence lifetime measurements are presented for Ce3+:Er3+:Yb3+:YVO4 crystals and compared to the corresponding data for Er3+:Yb3+:YVO4 crystals. These results show that doping with Ce3+ ions reduces the lifetime of the 4I11/2 state of Er3+ and thereby both suppresses upconversion from this state and improves the energy transfer efficiency from Yb3+ to Er3+. Lasing from this material is also demonstrated for this first time, both in quasi-continuous wave (QCW) and Q-switched modes. To obtain laser action at ∼1.5 µm, the Ce3+:Er3+:Yb3+:YVO4 crystals were pumped by laser diodes operating at ∼0.98 µm. For QCW operation, a slope efficiency of 2.6% and a threshold of 12 W were obtained. Q-switched pulses of 27 µJ energy and 52 µs pulse to pulse duration were also measured. (© 2011 by Astro Ltd., Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA) (© 2011 by Astro Ltd., Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA)

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    ABSTRACT: An Er:Yb:NaCe(WO4)2 crystal was grown by the Czochralski method. Spectral properties of the crystal were investigated and compared with those of the Er:Yb:Ce:NaGd(WO4)2 crystal. The green up-conversion was not observed when the Er:Yb:NaCe(WO4)2 crystal was excited by a diode laser at 970 nm. The efficiency of energy transfer from Yb3+ to Er3+ in the Er:Yb:NaCe(WO4)2 crystal was calculated to be about 93%. End-pumped by a diode laser at 970 nm in a hemispherical cavity, 0.95 W quasi-CW laser at 1.5–1.6 μm was achieved in a 1.47-mm-thick c-cut Er:Yb:NaCe(WO4){ia2} crystal, the slope efficiency was 11%, and the threshold was 2.83 W.
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    ABSTRACT: Integration of glass thin films with semiconductors promises new opportunities for novel photonic and optoelectronic devices due to the contribution of several synergetic properties. In this paper, we report the demonstration of the integration of Er3+-ion doped phosphate modified tellurite (PT) glass thin film waveguides with III-V semiconductor substrates. The thin films were deposited using the technique of pulsed laser deposition (PLD) and exhibit a refractive index which is very close to that of the bulk glass target used in the deposition process. Optical confinement and propagation loss measurements for the thin films deposited on GaAs substrates, with different thicknesses of silica buffer layers, is presented and shows good agreement with finite element models. Channel waveguide patterning was carried out using ultra-fast laser micromachining, and a range of optical characterization measurements are reported on confirming the high quality of the glass thin films and waveguides formed on silica and GaAs with silica buffer layers.
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