Article

MEMS shear stress sensors: Promise and progress

Department of Mechanical and Aerospace Engineering
IUTAM Symposium on Flow Control and MEMS 09/2006; DOI: 10.2514/6.2004-2606

ABSTRACT

This paper reviews existing microelectromechanical systems (MEMS)-based shear stress sensors. The promise and progress of MEMS scaling advantages to improve the spatial and temporal resolution and accuracy of shear stress measurement is critically reviewed. The advantages and limitations of existing devices are discussed. Finally, unresolved technical issues are summarized for future sensor development.

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    • "The MEMS based sensors, like many other applications, have a great promise for measurement of wall shear stress as well [1] [2] [3] [4]. Among the indirect methods, the development of thermal shear stress sensors has seen significant advancement in recent years [5] [6] [7] [8] [9] [10] [11] [12] [13]. "
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    ABSTRACT: In this paper we present for the first time, a novel silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) MEMS thermal wall shear stress sensor based on a tungsten hot-film and three thermopiles. These devices have been fabricated using a commercial 1 μm SOI-CMOS process followed by a deep reactive ion etch (DRIE) back-etch step to create silicon oxide membranes under the hot-film for effective thermal isolation. The sensors show an excellent repeatability of electro-thermal characteristics and can be used to measure wall shear stress in both constant current anemometric as well as calorimetric modes. The sensors have been calibrated for wall shear stress measurement of air in the range of 0 -0.48 Pa using a suction type, 2-D flow wind tunnel. The calibration results show that the sensors have a higher sensitivity (up to four times) in calorimetric mode compared to anemometric mode for wall shear stress lower than 0.3 Pa.
    Full-text · Conference Paper · Oct 2013
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    • "The MEMS based sensors, like many other applications, have a great promise for measurement of wall shear stress as well [1] [2] [3] [4]. Among the indirect methods, the development of thermal shear stress sensors has seen significant advancement in recent years [5] [6] [7] [8] [9] [10] [11] [12] [13]. "

    Full-text · Dataset · Sep 2013
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    • "MEMS wall shear stress sensors can be segregated into direct and indirect sensors [2]. Among the sensors that use indirect methods to measure wall shear stress, the micro hot film shear stress sensors have seen significant advancement in recent years [2] [3] [4] [5] [6] [7]. These thermal sensors have been developed using different materials as sensing elements (e.g. "
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    ABSTRACT: The successful utilization of an array of silicon on insulator complementary metal oxide semiconductor (SOICMOS) micro thermal shear stress sensors for flow measurements at macro-scale is demonstrated. The sensors use CMOS aluminum metallization as the sensing material and are embedded in low thermal conductivity silicon oxide membranes. They have been fabricated using a commercial 1 mum SOI-CMOS process and a post-CMOS DRIE back etch. The sensors with two different sizes were evaluated. The small sensors (18.5 times 18.5 mum<sup>2</sup> sensing area on 266 times 266 mum<sup>2</sup> oxide membrane) have an ultra low power (100degC temperature rise at 6 mW) and a small time constant of only 5.46 mus which corresponds to a cut-off frequency of 122 kHz. The large sensors (130 times 130 mum<sup>2</sup> sensing area on 500 times 500 mum<sup>2</sup> membrane) have a time constant of 9.82 mus (cut-off frequency of 67.9 kHz). The sensorspsila performance has proven to be robust under transonic and supersonic flow conditions. Also, they have successfully identified laminar, separated, transitional and turbulent boundary layers in a low speed flow.
    Full-text · Conference Paper · Nov 2008
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