44Gbit/s silicon Mach-Zehnder modulator based on interleaved PN junctions

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China.
Optics Express (Impact Factor: 3.49). 07/2012; 20(14):15093-9. DOI: 10.1364/OE.20.015093
Source: PubMed


A high speed silicon Mach-Zehnder modulator is proposed based on interleaved PN junctions. This doping profile enabled both high modulation efficiency of V(π)L(π) = 1.5~2.0 V·cm and low doping-induced loss of ~10 dB/cm by applying a relatively low doping concentration of 2 × 10(17) cm(-3). High speed operation up to 40 Gbit/s with 7.01 dB extinction ratio was experimentally demonstrated with a short phase shifter of only 750 μm.

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Available from: Xi Xiao, Sep 17, 2014
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    • "However, most of the reported high-bandwidth silicon carrier-depletion MZMs were demonstrated by using devices with rather short phase shifters with an extremely high or impractical V π . A typical V π for > 25 Gb/s operation is larger than 7 V [35] [36] [37] [38] [39] [40]. Compared with LiNbO 3 or InP modulators where a V π of 2–3 V can be achieved, the V π of silicon MZMs is much higher. "
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    • "Microring modulators integrated with a kind of zigzag PN junction was designed and proposed to enhance the EO responses. Compared with the interleaved PN junctions previously proposed [6] and demonstrated [7] [8] [9] by us, the zigzag PN junction provides similar efficiency while with smaller capacitance which enables higher electrical bandwidth up to 51 GHz [10]. The microring waveguide has a bending radius of 11 μm and the width of 550 nm. "
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