Growth mechanism of scales of SiC nanowires with/without ZnS powders at varying temperatures

ArticleinApplied Physics A 94(3):613-618 · February 2009with3 Reads
Impact Factor: 1.70 · DOI: 10.1007/s00339-008-4868-5

    Abstract

    The growth mechanism of scales of crystalline SiC nanowires (SiC-NWs) obtained by directly evaporating solid carbon on silicon
    wafer with/without ZnS powders at varying temperatures is being discussed. More aligned SiC-NWs of small size and good crystalline
    structure were formed when ZnS was used. Random SiC-NWs of big size and poor crystalline structure were obtained at conditions
    free of ZnS. Furthermore, the improved crystalline structure and increased diameter of SiC-NWs were observed when the higher
    temperature was employed.