An ultra-high pressure sensor based on SOI piezoresistive material

Journal of Mechanical Science and Technology (Impact Factor: 0.84). 08/2010; 24(8):1655-1660. DOI: 10.1007/s12206-010-0515-0


This paper describes an ultra-high pressure sensor which is in urgent need and widely used in defense industry and petroleum
industry. It is designed on the combination of micro Silicon on Insulator (SOI) solid piezoresistive chip based on Micro Electro
Mechanical Systems (MEMS) technique and cylindrical elastic body that could successfully convert dynamic ultra-high pressure
measurement in explosion to strain measurement. Performances of the sensor including size, sensitivity, and linearity are
investigated with experiment data. It’s proved that the dynamic ultra-high sensor in the range of 2GPa in this paper is successful
in pressure measurement in explosion. The research of ultra-high pressure sensor in this paper could not only provide a reference
for the improvement of explosive property, but also lay a foundation for research of pressure sensor in the range of 10GPa
of the next step.

KeywordsMEMS-Ultra-high pressure-Sensor-Piezoresistive-SOI

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    • "The fabrication process of the accelerometer is based on the SOI chip, which is made by MEMS techniques such as LPCVD, doping, etching and electrostatic bonding [12]. Double-side polished n-type SOI wafer is used for fabrication of the accelerometer in this paper. "
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    ABSTRACT: High-g accelerometers are widely used in explosion and shock measurement. This paper describes a MEMS piezoresistive high-g accelerometer whose range is more than 50000g. It is designed on the basis of silicon on insulator (SOI) solid piezoresistive chip. The chip has a structure where both ends of the beam are fixed. Through the stress analysis and mode analysis of the accelerometer, the detailed parameters of the structure are established. The experimental results obtained from the drop hammer shock machine test and live-fire test show good properties of the accelerometer such as good output characteristic, repeatability and fast response speed. Therefore, the accelerometer in this paper meets the requirement of explosion and shock measurement basically.
    Preview · Article · Mar 2013 · Journal of Mechanical Science and Technology
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    ABSTRACT: Silicon–glass (Si–glass)-based single piezoresistive pressure sensors were designed and fabricated by standard MEMS technology. The single piezoresistive sensing element was designed to be on the lower surface of the silicon diaphragm and be vacuum-sealed in a Si–glass cavity, which form a self-packaging protection structure helpful to the applications of sensors in harsh media. The pressure sensors were fabricated using a Si–glass anodic bonding technique, and the embedded Al feedthrough lines at the Si–glass interface are used to realize the electrical connections between the piezo-sensing element and the electrode-pads, and two larger-size electrode-pads are fabricated for realizing the soldered electrical connection between the sensor and the external circuit. The performance of the pressure sensors was characterized by a pressure test system at different temperature conditions. The temperature compensation was performed by the difference between the output voltage at zero-pressure and the output at operation pressure. The measurement results show that the sensitivity is 24 mV V–1 MPa−1, the coefficient of sensitivity is 0.14% FS °C–1, and both the zero-point offset and the temperature coefficient of offset are equal to zero, which are able to meet the commercial application requirements. However, a nonlinearity of 5.2% FS caused by the balloon effect would considerably worsen the accuracy of the pressure sensor. It is suggested to reduce the balloon effect by using a bossed-diaphragm structure in the pressure sensor.
    No preview · Article · Jun 2013 · Journal of Micromechanics and Microengineering
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    ABSTRACT: This paper describes a design method for optimizing sensitivity of piezoresistive pressure sensor in high-pressure and high-temperature environment. In order to prove the method, a piezoresistive pressure sensor (HPTSS) is designed. With the purpose of increasing sensitivity and to improve the measurement range, the piezoresistive sensor adopts rectangular membrane and thick film structure. The configuration of piezoresistors is arranged according to the characteristic of the rectangular membrane. The structure and configuration of the sensor chip are analyzed theoretically and simulated by the finite element method. This design enables the sensor chip to operate in high pressure condition (such as 150 MPa) with a high sensitivity and accuracy. The silicon on insulator wafer is selected to guarantee the thermo stability of the sensor chip. In order to optimize the fabrication and improve the yield of production, an electric conduction step is devised. Series of experiments demonstrates a favorable linearity of 0.13% and a high accuracy of 0.48%. And the sensitivity of HTPSS is about six times as high as a conventional square-membrane sensor chip in the experiment. Compared with the square-membrane pressure sensor and current production, the strength of HPTTS lies in sensitivity and measurement. The performance of the HPTSS indicates that it could be an ideal candidate for high-pressure and high-temperature sensing in real application.
    No preview · Article · Feb 2014 · The Review of scientific instruments
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