Article

A drain current model for Schottky-barrier CNT-FETs

Journal of Computational Electronics (Impact Factor: 1.52). 11/2006; 5(4):361-364. DOI: 10.1007/s10825-006-0022-9

ABSTRACT

We present here a physics-based drain current model for Schottky-barrier carbon nanotube field-effect transistors. The model
captures a number of features exhibited by these transistors such as thermionic and tunnel emission, ambipolar conduction,
ballistic transport, multimode propagation and electrostatics dominated by the nanotube capacitance

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Available from: Stephan Roche, Jan 02, 2016
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