Accurate small-signal modeling of FD-SOI MOSFETs

Osaka University, Suika, Ōsaka, Japan
IEICE Transactions on Electronics (Impact Factor: 0.28). 04/2006; E89-C(4):517-519. DOI: 10.1093/ietele/e89-c.4.517
Source: OAI


A new small-signal model for fully depleted silicon-on-insulator (FD-SOI) MOSFETs operating at RF frequencies is presented. The model accounts for the non-quasi-static effect by determining model parameters using a curve fitting procedure to reproduce the frequency response of FD-SOI MOSFETs. The accuracy of the model is validated by comparison of S parameters with measured results in the range from 0.2 GHz to 20 GHz. Copyright © 2006 The Institute of Electronics, Information and Communication Engineers.

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