Conference Paper

CMOS integrated gas sensor chip using SAW technology

Dept. of Electr. & Comput. Eng., George Washington Univ., DC, USA
DOI: 10.1109/ISCAS.2003.1206353 Conference: Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on, Volume: 4
Source: IEEE Xplore

ABSTRACT

The development of inexpensive and miniaturized SAW gas sensors that are highly selective and sensitive is introduced. These sensors are implemented with micro-electro-mechanical systems (MEMS) in CMOS technology. Since the sensors are fabricated on a silicon substrate, additional signal processing circuitry can easily be integrated into the chip thereby readily providing functions such as multiplexing and analog-to-digital conversion that are needed for integration into a network.

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    • "Si and GaAs substrates are of interest for the integration of SAW devices with the main stream microelectronics technology [6] [7]. So these types of devices can be implemented with micro-electro-mechanical systems (MEMS) compatible with CMOS technology [8] [9]. "
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    ABSTRACT: A miniature SAW device is designed and fabricated at 1 GHz for wireless communication system. A 5 ¿m thin film of ZnO is successfully deposited using RF sputtering technique on PECVD SiO2 layer of 1¿m on top of Si wafer under various operating conditions. The c-axis oriented ZnO film exhibit a sharp diffraction peak corresponding to the (002) reflection at 2¿=34.42. The fabrication process utilizing the MEMS technology of the SAW device is described. Simulation of the RF SAW filter is performed. Measurements and experimental work are presented for the RF SAW device.
    Full-text · Conference Paper · Sep 2006
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    ABSTRACT: The design and development of interface circuitries for CMOS-based SAW gas sensor is presented in this paper. The SAW sensor devices typically run at RF, requiring most design to have complex signal conditioning circuitry. Our approach attempt to design a simple architecture with reduced power consumption. The SAW sensors operate at 354MHz. Simulation data show that the interface circuitries are ten times smaller with lower power supply, compare to existing work
    No preview · Conference Paper · Oct 2005
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    ABSTRACT: A miniature SAW device is designed and fabricated at 1GHz for wireless communication system. A 5μm thin film of ZnO is successfully deposited using RF sputtering technique on plasma-enhanced chemical deposition (PECVD) SiO2 layer of 1μm on top of Si wafer under various operating conditions. The c-axis-oriented ZnO film exhibit a sharp diffraction peak corresponding to the (002) reflection at 2θ=34.42. The fabrication process utilizing the micro-electro-mechanical systems (MEMS) technology of the SAW device is described. Simulation of the RF-SAW filter is performed. Measurements and experimental work are presented for the RF-SAW device.
    No preview · Article · Mar 2007 · Microelectronics Journal
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