Conference Paper

A Miniaturized 0.5-Watt Q-band 0.25-μm GaAs PHEMT High Power Amplifier MMIC

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DOI: 10.1109/EUMA.2002.339227 Conference: Microwave Conference, 2002. 32nd European
Source: IEEE Xplore

ABSTRACT

The performance of a very compact power amplifier MMIC for Q-band applications is reported. Using a 4-inch 0.25-μm GaAs power PHEMT process, this 4-stage amplifier achieved a linear gain of 19 dB over the 36 to 45 GHz frequency range, with an output power at 1-dB gain compression of 26 dBm (P-1dB=400 mW), and a saturated output power of 0.5 Watt (Psat=27 dBm), for a chip size of only 2.25 mm2 (1.25 × 1.8 mm2). Compared to state-of-the-art power amplifier MMICs operating in the 36-43 GHz frequency range, the combined output power- and gain- densities per chip area are nearly a factor two higher, namely 220 mW/mm2 and 8.5 dB/mm,sup>2.

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    • "Progress in fabrication processes have made shrinking the HPA MMIC size easier: higher power PHEMT device process [1] [2], thin GaAs substrates (down to 50 µm), micro via-holes, and capacitors over vias [2] [3] [4]. "
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