Memristor based High Linear Range Differential Pair

Conference Paper · August 2009with36 Reads
DOI: 10.1109/ICCCAS.2009.5250373 · Source: IEEE Xplore
Conference: Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
Abstract

The current paper demonstrates the design of a wide range differential amplifier using memristor. The paper provides a comparative analysis of traditional approaches with a memristor based approach to achieve a high linear range for an amplifier. The paper also discusses how the inherent nonlinearity of the memristor is helpful in increasing the linear range of an amplifier. A 90 nm operational amplifier design using GenericPDK provided by Cadence Design Systems is used to validate the design and Spectre simulation results are provided as a testimonial to our proposed solution.

    • "...help increase the linear range of analog amplifier circuits as opposed to traditional setups [155, 156, 160]. Memristor devices also have potential uses in digital logic applications supporting in-memory..."
      Memristor devices can also be used for analog applications including programmable analog circuits, analog filters, oscillators, and chaotic analog circuits [158, 159]. In particular, the introduction of memristor technology could help increase the linear range of analog amplifier circuits as opposed to traditional setups [155, 156, 160]. Memristor devices also have potential uses in digital logic applications supporting in-memory computing [161, 162].
    [Show abstract] [Hide abstract] ABSTRACT: Memristors are one of the emerging technologies that can potentially replace state-of-art integrated electronic devices for advanced computing, digital and analog circuit applications including neuromorphic networks. Over the past few years, research and development mostly focused on revolutionizing the metal oxide materials, which are used as core components of the popular Metal-Insulator-Metal memristors owing to their highly recognized resistive switching behavior. This paper outlines the recent advancements and characteristics of such memristive devices, with a special focus on (i) their established resistive switching mechanisms, (ii) the key challenges associated with their fabrication processes including the impeding criteria of material adaptation for the electrode, capping and insulator component layers. Potential applications and an outlook into future development of metal-oxide memristive devices are also outlined.
    Full-text · Article · Jan 2015 · Nanotechnology Reviews
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    • "... source degeneration element in a complementary metal-oxide semiconductor (CMOS) differential pair [8]. Reference [9] shows a variety of programmable analog functional blocks based on analog memristor m..."
      Memristors are also used as programmable resistive loads in a differential amplifier [7]. Varghese and Gandi used memristor as a source degeneration element in a complementary metal-oxide semiconductor (CMOS) differential pair [8]. Reference [9] shows a variety of programmable analog functional blocks based on analog memristor memory including an Op-Amp based variable gain amplifier (VGA).
    [Show abstract] [Hide abstract] ABSTRACT: In this paper, a new approach toward the design of a memristor based nonvolatile static random-access memory (SRAM) cell using a combination of memristor and metal-oxide semiconductor devices is proposed. Memristor and MOSFETs of the Taiwan Semiconductor Manufacturing Company's 180-nm technology are used to form a single cell. The predicted area of this cell is significantly less and the average read-write power is ~25 times less than a conventional 6-T SRAM cell of the same complementary metal-oxide semiconductor technology. Read time is much less than the 6-T SRAM cell. However, write time is a bit higher, and can be improved by increasing the mobility of the memristor. The nonvolatile characteristic of the cell makes it attractive for nonvolatile random access memory design.
    Full-text · Article · Jan 2013
    0Comments 8Citations
    • "...g at employing memristors in programmable logics [25]–[31] , and analog circuit applications [32]–[38]. In the meantime, researchers have found that LC electronic networks with memristors can model adap..."
      It has been shown that memristor devices can be scaled down to 10 nm or below and memristor memories can achieve an integration density of 100 Gbits/cm , a few times higher than today's advanced flash memory technologies [23], [24]. More broadly, research has been done aiming at employing memristors in programmable logics [25]–[31] , and analog circuit applications [32]–[38]. In the meantime, researchers have found that LC electronic networks with memristors can model adaptive behavior of unicellular organisms.
    [Show abstract] [Hide abstract] ABSTRACT: Novel nonvolatile universal memory technology is essential for providing required storage for nanocomputing. As a potential contender for the next-generation memory, the recently found "the missing fourth circuit element," memristor, has drawn a great deal of research interests. In this paper, by starting from basic memristor device equations, we develop a comprehensive set of properties and design equations for memristor based memories. Our analyses are specifically targeting key electrical memristor device characteristics relevant to memory operations. Using our derived properties, we investigate the design of read and write circuits and analyze important data integrity and noise-tolerance is sues.
    Full-text · Article · May 2011 · Circuits and Systems I: Regular Papers, IEEE Transactions on
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