Selenium Segregation for Lowering the Contact Resistance in Ultrathin-Body MOSFETs With Fully Metallized Source/Drain

ArticleinIEEE Electron Device Letters 30(10):1087 - 1089 · November 2009with9 Reads
Impact Factor: 2.75 · DOI: 10.1109/LED.2009.2028660 · Source: IEEE Xplore

    Abstract

    We report the first integration of selenium (Se) segregation contact technology in ultrathin-body (UTB) n-MOSFET featuring Ni fully silicided source and drain. During the Ni silicidation process, the implanted Se segregated at the NiSi-n-Si interface, leading to significant reduction of Schottky barrier height and contact resistance. The UTB n-MOSFETs integrated with Se segregation (SeS) contact technology show significant external series resistance reduction and drive current performance enhancement. Drain-induced barrier lowering and gate leakage current density are not adversely affected by the SeS process.