Article

Altitude and underground real-time ser characterization of CMOS 65 nm SRAM

CNRS, Aix-Marseille Univ., Marseille, France
IEEE Transactions on Nuclear Science (Impact Factor: 1.28). 09/2009; 56(4):2258 - 2266. DOI: 10.1109/TNS.2009.2012426
Source: IEEE Xplore

ABSTRACT

We report real-time SER characterization of CMOS 65 nm SRAM memories in both altitude and underground environments. Neutron and alpha-particle SERs are compared with data obtained from accelerated tests and values previously measured for CMOS 130 nm technology.

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Available from: Jean-Luc Autran
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    • "The elevated flux of particles to which electronic devices are subjected may trigger phenomena that in actual real-time conditions will not occur. Accelerated results have been reported to differ to some degree from real-time results in [5], while in other cases more consistent results are obtained as in [6]. In [7], a comparison between different families of devices is performed showing that accelerated results may be in accordance or not with real-time testing results, depending also on the technology. "
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    ABSTRACT: In this work, we introduce the experimental setup and the first results of the Real-Time testing platform of High Altitude Memory Test (HAMLET) project installed at the Concordia station in Antarctica (acceleration factor of 9.8 compared to New York City-NYC). The platform is dedicated for the study of the response of 90 nm Commercial Off The Shelf (COTS) Static Random Access Memories (SRAMs) to atmospheric neutrons, operating in both the static and dynamic modes. Based on the up-to-date obtained results, the Soft Error Rate (SER) of the devices is extracted and compared with accelerated SER data. The results reveal the appearance of phenomena such as Single Event Latchups (SELs) during SRAM operation under real conditions, and not only as a result of accelerated overstressing tests. Additionally, results are in agreement with the Joint Electron Device Engineering Council (JEDEC89) standard acceleration factor and the anisotropy of the neutron flux is also studied.
    Preview · Article · Dec 2014 · IEEE Transactions on Nuclear Science
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    • "HE contribution to Single-Event Upsets (SEU) due to alpha-particles in the packaging materials can be inferred experimentally by performing SEU tests underground where the flux of terrestrial neutrons is very low. Autran et al. have shown experimentally that although the SEU rate from alpha particles has decreased with scaling, their share of the total SEU rate is larger than that from terrestrial neutrons [1]. Recently, Wrobel, et al. have shown these same trends by Monte Carlo modeling [2]. "
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    ABSTRACT: The emitted alpha particle energy distribution from solder bumps can show substantial surface emission which has a large impact on the modeled SEU rate. State-of-the art alpha-particle detectors are required to measure the low emissivity and energy distribution.
    Full-text · Article · Jan 2011 · IEEE Transactions on Nuclear Science
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    • "On the other hand, alpha particles directly generate charges by losing their energy and ionizing atoms of the medium in which they travel, resulting in charge generation, which may then be collected by sensitive nodes [5]. A recent study [6] showed the contribution to the Soft Error Rate (SER) by alpha particles at ground level is twice as great as that of neutrons for a 65 nm technology, even with high purity package materials with an alpha emission rate of . This shows the importance of alpha particles to soft errors compared to atmospheric neutrons. "
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    ABSTRACT: At ground level, alpha particles are a major source of soft errors. They may result from radioactive isotopes found in electronic device materials. In this paper, the materials' contributions to alpha particle-induced Soft Error Rate (SER) and MCU are evaluated for a 65 nm CMOS technology. The trend of SER on 45 and 32 nm is also reported in this paper. These evaluations are performed by Monte Carlo simulations, taking into account the radioactive impurity contamination levels in the device.
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